2011 Fiscal Year Final Research Report
Self-assembly of highly symmetric quantum dots on GaAs(111)
| Project/Area Number |
22710107
|
|---|
| Research Category |
Grant-in-Aid for Young Scientists (B)
|
| Allocation Type | Single-year Grants |
|---|
| Research Field |
Nanomaterials/Nanobioscience
|
|---|
| Research Institution | National Institute for Materials Science |
|---|
Principal Investigator |
MANO Takaaki 独立行政法人物質・材料研究機構, 先端フォトニクス材料ユニット, 主任研究員 (60391215)
|
|---|
| Project Period (FY) |
2010 – 2011
|
| Keywords | 量子ドット / ガリウム砒素 / もつれ合い光子 / 自己形成 / 量子情報 / 液滴 |
|---|
| Research Abstract |
Great suppression of fine-structure splitting(FSS) is demonstrated in self-assembled GaAs quantum dots(QDs) grown on AlGaAs(111) A surface. Due to the three-fold rotational symmetry of the growth plane, highly symmetric excitons with significantly reduced FSS are achieved. Polarized photoluminescence spectra confirm excitonic transition with FSS smaller than 20μeV, a substantial reduction from that of QDs grown on(100).
|
