2012 Fiscal Year Final Research Report
Study on solar-cells using InN/GaN superlattice peudo-alloy
| Project/Area Number |
22760233
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Waseda University |
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Principal Investigator |
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| Project Period (FY) |
2010 – 2012
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| Keywords | InN / 分子線エピタキシー / 太陽電池 / 窒化物半導体 / 超格子 |
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| Research Abstract |
Implementation of highly efficient semiconductor solar-cells are investigated. Semiconductor hetero-structures controlled in nano-meter-scale (superlattice) is employed as the active layer to enhance the efficiency of the solar-cells by increasing the absorption of sunlight. Theoretical and experimental investigations are performend on the AlAs/GaAs superlattices as prototypes to confirm the validity of the superlattice active layer. Growth of InN by molecular beam epitaxy is investigated for the applications of InN/GaN short-period superlattice.
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