2011 Fiscal Year Final Research Report
Fabrication of novel spintronic devices using the ferromagnet/diamond semiconductor heterostructures
| Project/Area Number |
22760250
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Single-year Grants |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | Nagoya University |
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Principal Investigator |
UEDA Kenji 名古屋大学, 工学研究科, 准教授 (10393737)
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| Project Period (FY) |
2010 – 2011
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| Keywords | 量子デバイス・スピンデバイス / ダイヤモンド |
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| Research Abstract |
In this research, we tried fabricating novel spintronic devices using ferromagnets/diamond semiconductors heterostructures and obtained mainly following three results.(1) It is found that ferromagnetic and half-metallic Heusler Co_2MnSi can be epitaxially grown on diamond for the first time.(2) Schottky barrier heights between ferromagnetic metal and diamond semiconductor can be controlled by selecting ferromagnetic metals with proper work function.(3) Signals related to spin injection were observed by 3-probe Hanle measurements using Ni/diamond ferromagnetic heterojunctions(τ=～20ps).
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