シリコンナノ構造を基盤としたドーパント原子デバイスの開発

2015 Fiscal Year Annual Research Report

• Project/Area Number: 23226009
• Research Institution: Shizuoka University
• Principal Investigator: 田部 道晴 静岡大学, 電子工学研究所, 教授 (80262799)
• Co-Investigator(Kenkyū-buntansha): 品田 賢宏 東北大学, 学内共同利用施設等, 教授 (30329099) ; 小野 行徳 富山大学, その他の研究科, 教授 (80374073) ; 水田 博 北陸先端科学技術大学院大学, マテリアルサイエンス研究科, 教授 (90372458) ; Moraru Daniel 静岡大学, 工学部, 准教授 (60549715)
• Project Period (FY): 2011-04-01 – 2016-03-31
• Keywords: 電子デバイス・機器 / シングルドーパント / シリコン / 量子ドット / ドーパント原子 / ナノデバイス / トランジスタ / 接合ダイオード

Outline of Annual Research Achievements

本計画では、ドーパント原子デバイス、および関連する要素研究を総合的に進めている。平成27年度は最終年度にあたり、当初目標を達成すべく研究を推進した。おおむね当初目標を達成できたと考える。
１．ドーパント原子トランジスタの縦方向電界効果：チャネル中の近接する2個のリンドナーに対して強い縦方向電界を印加していくと、チャネルと酸化膜の界面で2つのドナー誘起量子井戸が一体化し、一つの量子井戸としてI-V特性を決定づけることを明らかにした(Scientific Reports (2015))。
２．選択ドープ型ドーパント原子トランジスタ：H25年度に試作した選択ドープFETは、リンドナー数個をチャネル中央部にドーピングしたもので、分子状リンドナー特有の電子状態を反映したId-Vg特性が現れることをすでに報告しているが(Scientific Reports (2014))、動作温度の向上は不十分であった。H27年度はチャネル幅をさらに狭小化（10nm）して、ついに当初目標である室温での動作を確認するに至った（Si Nanoelectronics WS 2016 にて発表予定）。
３．高濃度pnナノダイオード：Si層厚さが10nm以下の2次元高濃度pnダイオードをH26年度に引き続き詳しく調べたところ、I-V特性に状態密度の量子化とシングルフォノンの放出が反映されていることを見出した。さらに順方向の負性微分特性に鋭い電流ピークが重畳され、これが接合部のドナー・アクセプター原子対による共鳴トンネル効果によるものであることを見出した(Appl. Phys. Lett. (2016))。
4．ドーパント原子検出・評価技術：高濃度選択ドープFETのKFMによる電位分布観察を進め、高濃度領域の内部でも電位凹凸があり、数個のドナー集団が量子井戸を形成することを観測した。電子輸送特性とよく整合している。

Research Progress Status

27年度が最終年度であるため、記入しない。

Strategy for Future Research Activity

27年度が最終年度であるため、記入しない。

Research Products

• [Int'l Joint Research] Warsaw Institute of Technology(Poland)
  • Country Name: Poland
  • Counterpart Institution: Warsaw Institute of Technology
• [Int'l Joint Research] University of Indonesia/Agency for Asses. and Appl. Technol.(Indonesia)
  • Country Name: Indonesia
  • Counterpart Institution: University of Indonesia/Agency for Asses. and Appl. Technol.
• [Int'l Joint Research] University of Southampton(英国)
  • Country Name: UNITED KINGDOM
  • Counterpart Institution: University of Southampton
• [Journal Article] Atomistic nature in band-to-band tunneling in two-dimensional silicon pn tunnel diodes (2016)
  • Author(s): Michiharu Tabe, Hoang Nhat Tan, Takeshi Mizuno, Manoharan Muruganathan, Le The Anh, Hiroshi Mizuta, Ratno Nuryadi, Daniel Moraru
  • Journal Title: Applied Physics Letters Volume: 108 Pages: 093502-1～5
  • DOI: http://dx.doi.org/10.1063/1.4943094
  • Peer Reviewed / Int'l Joint Research / Acknowledgement Compliant
• [Journal Article] Electric-Field-Assisted Formation of an Interfacial Double-Donor Molecule in Silicon Nano-Transistors (2015)
  • Author(s): Arup Samanta,Daniel Moraru, Takeshi Mizuno, Michiharu Tabe
  • Journal Title: Scientific Reports Volume: 5 Pages: 17377-1～10
  • DOI: 10.1038/srep17377
  • Peer Reviewed / Open Access / Acknowledgement Compliant
• [Journal Article] Effect of individual dopants in nano-SOI-MOSFETs and nano-pn-diodes (2015)
  • Author(s): M. Tabe, D. Moraru, A. Samanta, K. Tyszka, H. N. Tan, Y. Takasu, R. Jablonski, L. T. Anh, H. Mizuta, T. Mizuno
  • Journal Title: ECS Transactions Volume: 69 Pages: 189-195
  • Peer Reviewed / Int'l Joint Research / Acknowledgement Compliant
• [Journal Article] Physics of strongly-coupled dopant-atoms in nanodevices (2015)
  • Author(s): Daniel Moraru, Krzysztof Tyszka, Yuki Takasu, Arup Samanta, Takeshi Mizuno, Ryszard Jablonski, Michiharu Tabe
  • Journal Title: International Journal of Technology Volume: 6 Pages: 1057-1064
  • DOI: http://dx.doi.org/10.14716/ijtech.v6i6.1305
  • Peer Reviewed / Int'l Joint Research / Acknowledgement Compliant
• [Journal Article] Tunneling in Systems of Coupled Dopant-Atoms in Silicon Nanodevices (2015)
  • Author(s): Daniel Moraru,Arup Samanta, Krzysztof Tyszka, Le The Anh, Manoharan Muruganathan, Takeshi Mizuno, Ryszard Jablonski, Hiroshi Mizuta, Michiharu Tabe
  • Journal Title: Nanoscale Research Letters Volume: 10 Pages: 372-1～10
  • DOI: 10.1186/s11671-015-1076-z
  • Peer Reviewed / Int'l Joint Research / Acknowledgement Compliant
• [Journal Article] Effect of selective doping on the spatial dispersion of donor-induced quantum dots in Si nanoscale transistors (2015)
  • Author(s): Krzysztof Tyszka, Daniel Moraru, Arup Samanta, Takashi Mizuno, Ryszard Jablonski, Michiharu Tabe
  • Journal Title: Applied Physics Express Volume: 8 Pages: 094202-1～4
  • DOI: http://dx.doi.org/10.7567/APEX.8.094202
  • Peer Reviewed / Int'l Joint Research / Acknowledgement Compliant
• [Journal Article] Comparative study of donor-induced quantum dots in Si nano-channels by single-electron transport characterization and Kelvin probe force microscopy (2015)
  • Author(s): Krzysztof Tyszka, Daniel Moraru, Arup Samanta, Takashi Mizuno, Ryszard Jablonski, Michiharu Tabe
  • Journal Title: Journal of Applied Physics Volume: 117 Pages: 244307-1～6
  • DOI: http://dx.doi.org/10.1063/1.4923229
  • Peer Reviewed / Int'l Joint Research / Acknowledgement Compliant
• [Journal Article] Tunneling transport in quantum dots formed by coupled dopant atoms (2015)
  • Author(s): Daniel Moraru, Arup Samanta, Takahiro Tsutaya, Yuki Takasu, Takeshi Mizuno, Michiharu Tabe
  • Journal Title: Advanced Materials Research Volume: 1117 Pages: 78-81
  • DOI: 10.4028/www.scientific.net/AMR.1117.78
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] Kelvin Probe Force Microscope Observation of Donors' Arrangement in Si Transistor Channel (2015)
  • Author(s): Krzysztof Tyszka, Daniel Moraru, Takeshi Mizuno, Ryszard Jablonski, Michiharu Tabe
  • Journal Title: Advanced Materials Research Volume: 1117 Pages: 82-85
  • DOI: 10.4028/www.scientific.net/AMR.1117.82
  • Peer Reviewed / Int'l Joint Research / Acknowledgement Compliant
• [Presentation] Enhancement of Inter-Band Tunneling due to Low-Dimensionality of Lateral 2D Silicon Esaki Diodes (2016)
  • Author(s): D. Moraru, H. N. Tan, L. T. Anh, M. Manoharan, T. Mizuno, R. Nuryadi, H. Mizuta,and M. Tabe
  • Organizer: 2016 IEEE Silicon nanoelectronics Workshop
  • Place of Presentation: Hilton Hawaiian Village, HI USA
  • Year and Date: 2016-06-12 – 2016-06-13
  • Int'l Joint Research
• [Presentation] Single-Electron Tunneling Operation via A-Few-Donor Quantum Dots in SOI-FETs up to Room Temperature (2016)
  • Author(s): A. Samanta, Y. Takasu, T. Mizuno, D. Moraru and M. Tabe
  • Organizer: 2016 IEEE Silicon nanoelectronics Workshop
  • Place of Presentation: Hilton Hawaiian Village, HI USA
  • Year and Date: 2016-06-12 – 2016-06-13
  • Int'l Joint Research
• [Presentation] ドーパントを介したトンネル電流の評価とデバイス応用 (2016)
  • Author(s): 田部道晴
  • Organizer: 電気学会ナノエレクトロニクス新機能創出・集積化技術専門委員会
  • Place of Presentation: 早稲田大学（東京都新宿区）
  • Year and Date: 2016-03-09
  • Invited
• [Presentation] Si中の個別ドーパントの物理と利用：ＦＥＴとエサキダイオード (2016)
  • Author(s): 田部道晴、モラル ダニエル、サマンタ・アルプ、水野武志
  • Organizer: ナノデバイステクノロジーワークショップ2016
  • Place of Presentation: 広島大学（広島県東広島市）
  • Year and Date: 2016-03-02
  • Invited
• [Presentation] Dynamical modification of the equivalent circuit with the bias voltage in a multiple-dopant system (2015)
  • Author(s): Arup Samanata, Daniel Moraru, Yuki Takasu, Takeshi Mizuno, Michiharu Tabe
  • Organizer: The 17th Takayanagi Kenjiro Memorial Symposium
  • Place of Presentation: 静岡大学（静岡県浜松市）
  • Year and Date: 2015-11-17
  • Int'l Joint Research
• [Presentation] Atomic and Molecular Effects based on Dopants in Silicon Nanodevices (2015)
  • Author(s): Daniel Moraru, Arup Samanta, Krzysztof Tyszka, Manoharan Muruganathan, Le The Anh, Takeshi Mizuno, Ryszard Jablonski, Hiroshi Mizuta, Michiharu Tabe
  • Organizer: ICSS Meeting
  • Place of Presentation: Holiday Inn Resort Phuket, Phuket, THAILAND
  • Year and Date: 2015-11-04 – 2015-11-07
  • Int'l Joint Research / Invited
• [Presentation] 個別ドーパントの物理と利用：FETとエサキダイオード (2015)
  • Author(s): 田部道晴
  • Organizer: 応用物理学会東海支部主催The 2nd De Novo Si Workshop
  • Place of Presentation: 静岡大学（静岡県浜松市）
  • Year and Date: 2015-10-30
  • Invited
• [Presentation] Effect of Individual Dopants in Nano-SOI-MOSFETs and Nano-pn-Diodes (2015)
  • Author(s): Michiharu Tabe, Daniel Moraru, Arup Samanta, Krzysztof Tyszka, Hoang Nhat Tan, Yuuki Takasu, Ryszard Jablonski, Le The Anh, Hiroshi Mizuta, Takeshi Mizuno
  • Organizer: 228th ECS Meeting
  • Place of Presentation: Phoenix Convention Center,Phoenix, AZ, USA
  • Year and Date: 2015-10-11 – 2015-10-15
  • Int'l Joint Research / Invited
• [Presentation] Impact of dopant atoms on electron tunneling into nanoscale-transistor channels (2015)
  • Author(s): Daniel Moraru, Arup Samanta, Yuuki Takasu, Krzysztof Tyszka, Takeshi Mizuno, Ryszard Jablonksi, and Michiharu Tabe
  • Organizer: Inter-Academia 2015
  • Place of Presentation: Congress Center, Hamamatsu ACT CITY（静岡県浜松市）
  • Year and Date: 2015-09-28
  • Int'l Joint Research
• [Presentation] ドーパントによるバンド間トンネルの増強効果 (2015)
  • Author(s): Hoang Nhat Tan, Daniel Moraru, Le The Anh, Muruganathan Manoharan,Takeshi Mizuno, Hiroshi Mizuta, Michiharu Tabe
  • Organizer: 2015年第76回応用物理学会秋季学術講演会
  • Place of Presentation: 名古屋国際会議場（愛知県名古屋市）
  • Year and Date: 2015-09-13 – 2015-09-16
• [Presentation] High-temperature single-electron tunneling transport through dopant-cluster in narrow channel SOI-FETs (2015)
  • Author(s): Arup Samanta, Daniel Moraru, Yuki Takasu, Takeshi Mizuno, Michiharu Tabe
  • Organizer: 2015年第76回応用物理学会秋季学術講演会
  • Place of Presentation: 名古屋国際会議場（愛知県名古屋市）
  • Year and Date: 2015-09-13 – 2015-09-16
• [Presentation] Correlation between single-electron tunneling characteristics and potential landscapes in dopant-atom (2015)
  • Author(s): Krzystof Tyszka, Daniel Moraru ,Arup Samanta, Takeshi Mizuno, Ryszard Jablonski, Michiharu Tabe
  • Organizer: 2015年第76回応用物理学会秋季学術講演会
  • Place of Presentation: 名古屋国際会議場（愛知県名古屋市）
  • Year and Date: 2015-09-13 – 2015-09-16
• [Presentation] Physics of Strongly-Coupled Dopant-Atoms in Nanodevices (2015)
  • Author(s): Daniel Moraru, Krzysztof Tyszka, Yuki Takasu, Arup Samanta, Takeshi Mizuno, Ryszard Jablonski and Michiharu Tabe
  • Organizer: The 14th International Conference on QiR
  • Place of Presentation: Hotel Lombok Raya, Lombok, INDONESIA
  • Year and Date: 2015-08-10 – 2015-08-13
  • Int'l Joint Research
• [Presentation] Recent Progress in Single-dopant Atom Devices (2015)
  • Author(s): Michiharu Tabe, Daniel Moraru, Arup Samanta and Takeshi Mizuno
  • Organizer: The 14th International Conference on QiR
  • Place of Presentation: Hotel Lombok Raya, Lombok, INDONESIA
  • Year and Date: 2015-08-10 – 2015-08-13
  • Int'l Joint Research / Invited
• [Presentation] Dopant-cluster-assisted tunnelling in Si nanodevices (2015)
  • Author(s): Michiharu Tabe, Daniel Moraru, Arup Samanta, Hoang Nhat Tan, Le The Anh, Muruganathan Manoharan, Hiroshi Mizuta and Takeshi Mizuno
  • Organizer: Silicon Quantum Electronics Workshop 2015
  • Place of Presentation: Kagawa International Conference Hall, KAGAWA
  • Year and Date: 2015-08-04
  • Int'l Joint Research
• [Presentation] ドーパント原子を用いたシリコンナノデバイスの研究 (2015)
  • Author(s): 田部道晴
  • Organizer: 豊田工業大学グリーン電子素子・材料研究センター第１回シンポジウム
  • Place of Presentation: 豊田工業大学（愛知県名古屋市）
  • Year and Date: 2015-08-03
  • Invited
• [Presentation] Tunneling Transport through Single-and Clustered -Dopants (2015)
  • Author(s): Michiharu Tabe, Daniel Moraru, Arup Samanta, Hoang Nhat Tan, Le The Anh, Muruganathan Manoharan, Hiroshi Mizuta and Takeshi Mizuno
  • Organizer: ⅢBilateral Italy-Japan Seminar
  • Place of Presentation: Campus Plaza Kyoto, KYOTO
  • Year and Date: 2015-06-16
  • Int'l Joint Research / Invited
• [Presentation] Dopant-Assisted Tunnel-Current Enhancement in Two-Dimensional Esaki Diodes (2015)
  • Author(s): Hoang Nhat Tan, Daniel Moraru, Krzysztof Tyszka, Anak Agung Ngurah Gde Sapteka, Sri Purwiyanti Surya, Le The Anh, Muruganathan Manoharan, Takeshi Mizuno, Ryszard Jablonski, Djoko Hartanto, Hiroshi Mizuta and Michiharu Tabe
  • Organizer: 2015 Silicon Nanoelectronics Workshop
  • Place of Presentation: Rihga Royal Hotel Kyoto, KYOTO
  • Year and Date: 2015-06-14 – 2015-06-15
  • Int'l Joint Research
• [Presentation] Impact of Diffused Donor-Clusters near Lead/Channel Boundary on High-Temperature Single-Electron Tunneling in Narrow SOI-FETs (2015)
  • Author(s): Daniel Moraru, Arup Samanta, Yuuki Takasu, Krzysztof Tyszka, Takeshi Mizuno, Ryszard Jablonski, and Michiharu Tabe
  • Organizer: 2015 Silicon Nanoelectronics Workshop
  • Place of Presentation: Rihga Royal Hotel Kyoto, KYOTO
  • Year and Date: 2015-06-14 – 2015-06-15
  • Int'l Joint Research
• [Presentation] The impact of single donor and donor-acceptor pair on electronic and transport properities of silicon nanostructures (2015)
  • Author(s): Le The Anh, Daniel Moraru, Muruganathan Manoharan, Michiharu Tabe and Hiroshi Mizuta
  • Organizer: 2015 Silicon Nanoelectronics Workshop
  • Place of Presentation: Rihga Royal Hotel Kyoto, KYOTO
  • Year and Date: 2015-06-14 – 2015-06-15
  • Int'l Joint Research
• [Presentation] Position and Number Control of Donor-QD Potential by Patttern-doping in SOI-FET Channels (2015)
  • Author(s): Krzysztof Tyszka , Daniel Moraru, Takeshi Mizuno, Ryszard Jablonski and Michiharu Tabe
  • Organizer: 2015 Silicon Nanoelectronics Workshop
  • Place of Presentation: Rihga Royal Hotel Kyoto, KYOTO
  • Year and Date: 2015-06-14 – 2015-06-15
  • Int'l Joint Research
• [Presentation] Tunneling via Single and Coupled Dopant Atoms in Si Nanodevices (2015)
  • Author(s): Daniel Moraru, Arup Samanta, Krzysztof Tyszka, Le The Anh, Muruganathan Manoharan, Takeshi Mizuno, Ryszard Jablonski, Hiroshi Mizuta and Michiharu Tabe
  • Organizer: EMN Meeting on Quantum Technology
  • Place of Presentation: Beijing Xijiao Hotel, Beijing, CHINA
  • Year and Date: 2015-04-14 – 2015-04-17
  • Int'l Joint Research / Invited
• [Book] Nanoscale Silicon Devices Chapter 8: “Dopant-Atom Silicon Tunneling Nanodevices” (2015)
  • Author(s): Daniel Moraru and Michiharu Tabe
  • Total Pages: 288
  • Publisher: CRC Press
• [Remarks] 静岡大学 電子工学研究所 田部道晴研究室ホームページ
  • URL: http://www.rie.shizuoka.ac.jp/~nanohome/