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2013 Fiscal Year Final Research Report

Fabrication of graphene nanostructures and correlation to electronic properties

Research Project

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Project/Area Number 23246014
Research Category

Grant-in-Aid for Scientific Research (A)

Allocation TypeSingle-year Grants
Section一般
Research Field Thin film/Surface and interfacial physical properties
Research InstitutionKyushu University

Principal Investigator

TANAKA Satoru  九州大学, 工学(系)研究科(研究院), 教授 (80281640)

Co-Investigator(Kenkyū-buntansha) HASHIMOTO Akihiro  福井大学, 工学系研究科, 教授 (10251985)
KOMORI Fumio  東京大学, 物性研究所, 教授 (60170388)
MIZUNO Seigi  九州大学, 大学院総合理工学研究院, 教授 (60229705)
VISIKOVSKIY Anton  九州大学, 大学院工学研究院, 助教 (70449487)
KANGAWA Yoshihiro  九州大学, 応用力学研究所, 准教授 (90327320)
INAGAKI Yuji  九州大学, 大学院工学研究院, 助教 (10335458)
Project Period (FY) 2011-04-01 – 2014-03-31
Keywordsグラフェン / ナノ構造 / ナノリボン / バンドギャップ / エピタキシー
Research Abstract

Graphene is an ultimate 2D form of material and thus has been noticed in terms of its unique nano properties. However, it has no band-gap and thus is unable to apply for switching devices. Therefore, band-gap opening is a significant issue for this purpose. Many methods have been reported to open band-gap and among them nanoribbons are recognized to be especially important because of relatively large gap formation. We here tried to selectively grow graphene on SiC nano-surfaces, including periodic step/terrace structures, and succeeded in graphene nano ribbon formation. Electronic structures at K-points were examined and found clear band-gap opening.

  • Research Products

    (14 results)

All 2013 2012 2011

All Journal Article (8 results) (of which Peer Reviewed: 8 results) Presentation (6 results)

  • [Journal Article] Graphene nanoribbons on vicinal SiC surfaces by molecular beam epitaxy2013

    • Author(s)
      T.Kajiwara, et al.
    • Journal Title

      Phys. Rev. B

      Volume: 87 Pages: 121407

    • Peer Reviewed
  • [Journal Article] Graphene nanoribbons grown on epitaxial SixCuOz layer on vicinal SiC(0001) surfaces by chemical vapor deposition2013

    • Author(s)
      Y.Hagihara, et al.
    • Journal Title

      Appl. Phys

      Volume: Express 6 Pages: 55102

    • Peer Reviewed
  • [Journal Article] Numerical analysis on vacancy induced vibrational properties of graphene nanoribbons2013

    • Author(s)
      Md. Sherajul, et al.
    • Journal Title

      Computational Mater. Sci

      Volume: 79 Pages: 356

    • Peer Reviewed
  • [Journal Article] Numerical experiments on phonon properties of isotope and vacancy-type disordered graphene2013

    • Author(s)
      Md. Sherajul, et al.
    • Journal Title

      Diamond & Related Materials

      Volume: 40 Pages: 115

    • Peer Reviewed
  • [Journal Article] Role of atomic terraces and steps in the electron transport properties of epitaxial graphene grown on SiC2012

    • Author(s)
      H.Kuramochi, et al.
    • Journal Title

      AIP Adv

      Volume: 2 Pages: 012115

    • Peer Reviewed
  • [Journal Article] Uniaxial deformation of graphene Dirac cone on a vicinal SiC substrate2012

    • Author(s)
      K.Nakatsuji, et al.
    • Journal Title

      Phys. Rev. B

      Volume: 85 Pages: 195416

    • Peer Reviewed
  • [Journal Article] A Raman imaging study of growth process of few-layer epitaxial graphene on vicinal 6H?SiC2012

    • Author(s)
      S.Kamoi, et al.
    • Journal Title

      Diamond & Related Materials

      Volume: 25 Pages: 80

    • Peer Reviewed
  • [Journal Article] エピタキシャルグラフェンの成長と電子物性2012

    • Author(s)
      田中 悟, 他
    • Journal Title

      触媒

      Volume: Vol.54 Pages: 386

    • Peer Reviewed
  • [Presentation] Bandgap Opening on Graphene Nanoribbons Grown on Vicinal 6H- and 4H-SiC Surfaces by Molecular Beam Epitaxy2013

    • Author(s)
      T.Kajiwara, et al.
    • Organizer
      ICSCRM2013
    • Place of Presentation
      Miyazaki, Japan
    • Year and Date
      20130929-1004
  • [Presentation] Silicon Intercalation at the SiC-Graphene Interface2013

    • Author(s)
      S.Kimoto, et al.
    • Organizer
      ICSCRM2013
    • Place of Presentation
      Miyazaki, Japan
    • Year and Date
      20130929-1004
  • [Presentation] Intermediate C-Rich (R3xR3) R30 Structure Preceding Graphene Buffer Layer Formation on SiC (0001)2013

    • Author(s)
      S.Hayashi, et al.
    • Organizer
      ICSCRM2013
    • Place of Presentation
      Miyazaki, Japan
    • Year and Date
      20130929-1004
  • [Presentation] Growth of graphene nanoribbon arrays on vicinal SiC surfaces by molecular beam epitaxy2013

    • Author(s)
      S.Tanaka
    • Organizer
      Physical Sciences Symposia-2013-Boston
    • Place of Presentation
      U.S.A.
    • Year and Date
      20130904-05
  • [Presentation] Graphene nanoribbons grown by molecular beam epitaxy2012

    • Author(s)
      S.Tanaka
    • Organizer
      IUMRS-IECM2012
    • Place of Presentation
      Yokohama
    • Year and Date
      20120923-28
  • [Presentation] Formation of graphene nanostructures on vicinal SiC surfaces2011

    • Author(s)
      S.Tanaka
    • Organizer
      SSDM2011
    • Place of Presentation
      Nagoya
    • Year and Date
      20110928-30

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Published: 2015-06-25   Modified: 2021-04-07  

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