Development of SiC photonic crystals

2014 Fiscal Year Final Research Report

• Project/Area Number: 23360033
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Applied optics/Quantum optical engineering
• Research Institution: Kyoto University
• Principal Investigator: ASANO Takashi 京都大学, 工学(系)研究科(研究院), 准教授 (30332729)
• Project Period (FY): 2011-04-01 – 2015-03-31
• Keywords: SiC / フォトニック結晶 / 高Q値 / 二光子吸収抑制 / 超広帯域 / 可視光 / ハイパワー動作 / 高調波発生

Outline of Final Research Achievements

We realized photonic crystals based on silicon carbide that is a wide gap semiconductor, and succeeded in expanding the application area of conventional photonic crystal made of silicon: (A) A photonic device that can process very high intensity light which is 100 times stronger than that can be processed in silicon device has been demonstrated because of complete suppression of two photon absorption. (B)A photonic circuit that can process a wide wavelength range of light from infrared to visible on a same chip has been achieved. In addition, temperature stability of SiC phtonic device has been demonstrated to be about 1/3 of silicon. The Q factor of the photonic crystal nanocavity realized in this study is still 14,000, but it is not limited by the original characteristics of the SiC material. I believe the Q factor can be improved in the future study.

Free Research Field

光量子電子工学