2013 Fiscal Year Final Research Report
Study of defect-related dielectric function change and the process optimiztion framework for ultimately low power systems
| Project/Area Number |
23360321
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Material processing/treatments
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| Research Institution | Kyoto University |
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Principal Investigator |
ERIGUCHI Koji 京都大学, 工学(系)研究科(研究院), 准教授 (70419448)
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| Co-Investigator(Kenkyū-buntansha) |
ONO Kouichi 京都大学, 大学院・工学研究科, 教授 (30311731)
TAKAO Yoshinori 京都大学, 大学院・工学研究科, 助教 (80552661)
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| Project Period (FY) |
2011-04-01 – 2014-03-31
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| Keywords | プラズマ / 表面・界面制御 / 極低消費電力 / 欠陥 / 誘電率 / シリコン / トランジスタ |
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| Research Abstract |
We focused on mechanisms of process-induced defect generation and the recovery dynamics, which lead to power-consumption increase in a future electronic system. By employing a novel photoreflectance spectroscopy capable for micro-scale analysis and a capacitance-voltage technique, we clarified the plasma process-induced defect generation in crystalline Si and the recovery processes. Combined with classical molecular dynamics simulations and quantum mechanical calculations, we addressed critical process-related issues in designing present-day three-dimensional devices. Thermal annealing of the created defects was also studied for various plasma conditions such as gas chemistry. We proposed a framework of power-consumption-aware process design with respect to "defects and the behavior in a material" for future ultimately low power electronic systems.
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