2013 Fiscal Year Final Research Report
Development of process equipment for deposition of amorphous carbon films by pulsed plasmas with high plasma density
| Project/Area Number |
23560324
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Power engineering/Power conversion/Electric machinery
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| Research Institution | Nagoya Institute of Technology |
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Principal Investigator |
KIMURA TAKASHI 名古屋工業大学, 工学(系)研究科(研究院), 准教授 (60225042)
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| Project Period (FY) |
2011 – 2013
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| Keywords | アモルファスカ－ボン / パルスプラズマ / 反応性プラズマ / パルスパワー |
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| Research Abstract |
Amorphous carbon films have several applications in various industrial areas. In this study, thin amorphous carbon films are deposited by pulsed plasmas with high plasma density such as high power impulse magnetron sputtering (HiPIMS). The hardness of the films deposited by argon HiPIMS is higher than that deposited by direct current magnetron sputtering and the maximum reaches 18GPa. Moreover, thin amorphous carbon films are deposited by HiPIMS containing reactive gases in order to achieve further improvement of the film properties. Thin amorphous carbon nitride films are deposited by argon/nitrogen HiPIMS. The hardness of the films at the nitrogen fraction of 2.5% is about 1.3 times higher than that without nitrogen. Amorphous hydrogenated carbon films are also deposited by reactive argon/methane HiPIMS. This method includes both physical vapor deposition and plasma enhanced chemical vapor deposition. Deposition rate abruptly increases with the increase in methane fraction.
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