2013 Fiscal Year Final Research Report
Control of nano silicon phosphorescence and application to optical devices
| Project/Area Number |
23560388
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | Nagoya University |
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Principal Investigator |
GELLOZ Bernard 名古屋大学, 工学(系)研究科(研究院), 特任准教授 (40343157)
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| Project Period (FY) |
2011 – 2013
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| Keywords | ナノシリコン / 燐光 / 青色発光 |
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| Research Abstract |
The blue phosphorescence of oxidized nano-silicon layers has been investigated. It originates from molecular species in the oxide part of the material. Silicon nanocrystals are not involved in the emission process. It includes 6 sub-bands having vibrational origin and which respective intensities can be tuned by changing the excitation energy. A new band emitting in the ultraviolet region (275-290 nm) was found and attributed to water-related molecular species adsorbed at the surface of the porous material pores.
Applications in cosmetics, medicine, display and photovoltaics, have been studied. Red, blue or white emitting powders have been achieved. Samples emitting strong green (Tb doping), red (Eu doping) and also infrared (Er doping) were also developed. For electrically active devices, a new technique of metal deposition inside nano-silicon pores has been developed using a supercritical method. The layers are also promising as wide bandgap material for photovoltaics.
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[Presentation] Application of Ballistic Hot Electron Emission from Nanocrystalline Porous Silicon to Thin Film Deposition of Si, Ge, and SiGe2014
Author(s)
R. Suda, M. Yagi, A. Kojima, R. Mentek, B. Gelloz, N. Mori, J. Shirakashi, N. Koshida
Organizer
9^<th> Int. Conf. On Porous Semiconductors Science and Technology
Place of Presentation
Alicante, Spain
Year and Date
2014-03-10
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