2013 Fiscal Year Final Research Report
Science of THz light source based on longitudinal phonon-plasmon coupled mode in nitride materials
| Project/Area Number |
23656010
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| Research Category |
Grant-in-Aid for Challenging Exploratory Research
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| Allocation Type | Multi-year Fund |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Chiba University |
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Principal Investigator |
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| Project Period (FY) |
2011 – 2013
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| Keywords | 赤外光 / THz / 量子干渉 / LOフォノン / 界面分極 |
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| Research Abstract |
The purpose of this research is the proposal of the principle and structure of THz light source with the frequency of less than 30 THz. It was found that absorption of p-polarized light by GaN and AlN thin films with the thickness less than a wavelength was detected. Also s-polarized light was absorbed in the stripe-shaped mesa structure with the width of less than a wavelength. Fano-type quantum interference was observed for the system of two LO phonon modes vibrating in the same plane and one continuum of inter-valence band transition in p-GaInP films. These results suggest the possibility of the coherent THz light emission by LO phonon system based on electromagnetic induced transparency.
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