2011 Fiscal Year Final Research Report

Growth of high quality InGaN-based superlattice using pulsed modulation plasma assisted molecular beam epitaxy

Research Project

Project/Area Number	23656015
Research Category	Grant-in-Aid for Challenging Exploratory Research
Allocation Type	Multi-year Fund
Research Field	Applied materials science/Crystal engineering
Research Institution	Nagoya University
Principal Investigator	AMANO Hiroshi 名古屋大学, 工学研究科, 教授 (60202694)
Co-Investigator(Kenkyū-buntansha)	YAMAGUCHI Mashito 名古屋大学, 工学研究科, 准教授 (20273261) HONDA Yoshio 名古屋大学, 工学研究科, 助教 (60362274)
Project Period (FY)	2011
Keywords	PAMBE / InGaN / 窒素ラジカル / LED / 太陽電池
Research Abstract	Growth of high In content thick InGaN layers and InGaN nanowires were conducted by plasma assisted molecular beam epitaxy. InGaN/GaN superlattice structures are found to be very effective to realize low-defect-density high-In-content InGaN. PL intensity of InGaN nanowires is strongly affected by the density of basal stacking faults. It is possible to reduce stacking fault density by growing high In content InGaN nanowires at high growth temperature and high In flux ratio.

(1 results)