2013 Fiscal Year Final Research Report
Site- and shape-controlled growth of InAs quantum dots and their application to the electronics/photonics devices
| Project/Area Number |
23681029
|
|---|
| Research Category |
Grant-in-Aid for Young Scientists (A)
|
| Allocation Type | Single-year Grants |
|---|
| Research Field |
Microdevices/Nanodevices
|
|---|
| Research Institution | The University of Tokyo |
|---|
Principal Investigator |
SHIBATA Kenji 東京大学, ナノ量子情報エレクトロニクス研究機構, 特任講師 (00436578)
|
|---|
| Project Period (FY) |
2011-04-01 – 2014-03-31
|
| Keywords | 量子ドットデバイス / ナノ物性制御 / テラヘルツ / トランジスタ |
|---|
| Research Abstract |
Electrical manipulation and read-out of quantum states in zero-dimensional nanostructures by nano-gap metal electrodes is expected to bring about innovation in quantum information processing.
In this study, the site- and shape-controlled InAs quantum dots (QDs) were successfully fabricated, which drastically improved the fabrication yield of the functional devices using single QDs. Then, a variety of remarkable properties of the InAs QD transistors were demonstrated, such as QD supercurrent transistors, electrically tunable large g-factors and spin-orbit interaction, and optical pumping of carriers in the terahertz frequency range. These works are opening a way for novel quantum information applications on self-assembled InAs QDs.
|
