Studies on defect formation process and electrical properties of Silicon-Carbon strained heterostructures

2012 Fiscal Year Final Research Report

• Project/Area Number: 23760011
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Multi-year Fund
• Research Field: Applied materials science/Crystal engineering
• Research Institution: University of Yamanashi
• Principal Investigator: ARIMOTO Keisuke 山梨大学, 大学院・医学工学総合研究部, 准教授 (30345699)
• Project Period (FY): 2011 – 2012
• Keywords: 結晶工学 / 結晶成長 / 半導体物性

Research Abstract

Growth conditions appropriate for formation of compressively strained Si/Si1-xCx heterostructure on Si(100) substrate using gas-source molecular beam epitaxy method have been systematically studied. Mechanisms of defect formation and stress relaxation process have been studied, which is essential f or the growth of high quality crystal. P-type MOSFETs with compressively strained Si channel layer were fabricated. Electrical characterization revealed hole mobility improvement in this material system.

Research Products

• [Journal Article] Formation of compressively strained Si/Si1-xCx/Si(100) heterostructures using gas-source molecular beam epitaxy (2013)
  • Author(s): K. Arimoto, H. Furukawa, J. Yamanaka, C. Yamamoto, K. Nakagawa, N. Uasmi, K. Sawano, Y. Shiraki, J. Cryst
  • Journal Title: Growth Volume: 362 Pages: 276-281
  • Peer Reviewed
• [Journal Article] Reflectance anisotropies of compressively strained Si grown on vicinal Si_1-x C_x (001) (2013)
  • Author(s): R. E. Balderas-Navarro, N. A. Ulloa-Castillo, K. Arimoto, G. Ramierz-Melendez, L. F. Lastras-Martinez, H. Furukawa, J. Yamanaka, A. Lastras-Martinez, J. M. Flores-Camacho, N. Usami, D. Stifter, K. Hingerl
  • Journal Title: Appl. Phys. Lett Volume: 102 Pages: 011902
  • Peer Reviewed
• [Journal Article] Gas-source MBE growth of strain-relaxed Si_1-x C_x on Si(100) substrates (2013)
  • Author(s): K. Arimoto, S. Sakai, H.Furukawa, J. Yamanaka, K. Nakagawa, N.Usami, Y. Hoshi, K. Sawano, Y. Shiraki, J. Cryst
  • Journal Title: Growth
  • Peer Reviewed
• [Presentation] ガスソース MBE 法による圧縮歪み Si/緩和 Si_1-x C_x /Si ヘテロ構造の形成と構造評価 (2013)
  • Author(s): 古川洋志、酒井翔一朗、有元圭介、山中淳二、中川清和、星裕介、宇佐美徳隆
  • Organizer: 第60回応用物理学会春季学術講演会
  • Place of Presentation: 神奈川工科大学
  • Year and Date: 2013-03-28
• [Presentation] Gas-source MBE growth of compressively strained-Si/Si1-xCx/Si(100) heterostructures (2012)
  • Author(s): S. Sakai, H. Furukawa, K. Arimoto, J. Yamanaka, K. Nakagawa, Y. Hoshi, K. Sawano, Y. Shiraki, N. Usami
  • Organizer: The 17th International Conference on Molecular Beam Epitaxy
  • Place of Presentation: 奈良県新公会堂
  • Year and Date: 2012-09-27
• [Presentation] 圧縮歪み Si/Si_1-X C_X /Si(100)ヘテロ構造の形成と評価 (2012)
  • Author(s): 酒井翔一朗、古川洋志、有元圭介、山中淳二、中川清和、宇佐美徳隆、星裕介、澤野憲太郎、白木靖寛
  • Organizer: 第59回応用物理学会春季学術講演会
  • Place of Presentation: 早稲田大学
  • Year and Date: 2012-03-16
• [Remarks]
  • URL: http://www.inorg.yamanashi.ac.jp/ccst/laboratories/nakagawa-lab