2013 Fiscal Year Final Research Report
Research on development of the growth of III-V nanowires for applications in bottom-up optoelectronic devices
| Project/Area Number |
23760296
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | The University of Tokyo |
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Principal Investigator |
TATEBAYASHI Jun 東京大学, ナノ量子情報エレクトロニクス研究機構, 特任助教 (40558805)
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| Project Period (FY) |
2011 – 2012
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| Keywords | ナノワイヤ / 量子ドット / 有機金属気層成長法 / 単一光子発生器 / 太陽電池 / レーザ / 高均一 / 多積層 |
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| Research Abstract |
Objective of this research is to establish the growth technique for compound semiconductor nanowires for applications in lasers, single photon emitters and solar cells. I establish the growth technology to form quantum dot structures embedded in nanowires and processing technology for nanowire-based optoelectronic devices. I characterize the optical and device characteristics of the devices utilizing nanowire-quantum dots. I observe single-photon emission process from high-quality single nanowire-quantum dot by means of auto-correlation measurements. I propose and demonstrate a growth scheme to form highly uniform, multi-stacked quantum dots embedded in nanowires and achieve high quality multi-stacked nanowire-quantum dots up to 200 layer without degradation of the optical properties. In addition, we demonstrate optoelectronic devices including lasers, single photon emitters and solar cells utilizing nanowire-quantum dots.
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[Presentation] Formation and optical properties of multi-stack InAs/GaAs quantum dots embedded in GaAs nanowires grown by selective metalorganic chemical vapor deposition
Author(s)
J. Tatebayashi, D. Karunathillake, Y. Ota, S. Ishida, M. Nishioka, Y. Takayama, T. Ishida, H. Fujita, S. Iwamoto, and Y. Arakawa
Organizer
16th International Conference on Metal Organic Vapor Phase Epitaxy
Place of Presentation
Busan, Korea( MoB3-2)
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