2013 Fiscal Year Final Research Report
Development of low-cost, ultrahigh-efficiency compound semiconductor/silicon hybrid tandem solar cells
| Project/Area Number |
23760303
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | The University of Tokyo |
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Principal Investigator |
TANABE Katsuaki 東京大学, ナノ量子情報エレクトロニクス研究機構, 特任准教授 (60548650)
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| Project Period (FY) |
2011 – 2013
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| Keywords | 太陽電池 / 化合物半導体 / シリコン / ウェハ貼り合わせ |
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| Research Abstract |
We have generated an ohmic GaAs/Si bonded interface for the first time. This optically transparent, electrically conductive heterointerface can be applied for the creation of various novel high-performance compound semiconductor/silicon hybrid optoelectronic devices. By using the GaAs/Si bonding technique, we have successfully fabricated an AlGaAs/Si two-terminal dual-junction solar cell, the first bonded compound semiconductor/silicon hybrid multijunction solar cell. The fabricated dual-junction cell exhibits a high preliminary efficiency of 25% under a 1 sun (100 mW/cm2) illumination, demonstrating the validity of our bonding scheme for the realization of ultrahigh-efficiency lattice-mismatched multijunction solar cells.
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