Realization of compressively strained silicon by defect control using ion implantation and application to high hole mobilty devices

2015 Fiscal Year Final Research Report

• Project/Area Number: 24360001
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Partial Multi-year Fund
• Section: 一般
• Research Field: Applied materials science/Crystal engineering
• Research Institution: Nagoya University (2013-2015); Tohoku University (2012)
• Principal Investigator: Usami Noritaka 名古屋大学, 工学(系)研究科(研究院), 教授 (20262107)
• Co-Investigator(Kenkyū-buntansha): ARIMOTO Keisuke 山梨大学, 総合研究部, 准教授 (30345699) ; SAWANO Kentaro 東京都市大学, 工学部, 教授 (90409376)
• Project Period (FY): 2012-04-01 – 2016-03-31
• Keywords: 歪みシリコン / ヘテロ構造 / 分子線エピタキシー

Outline of Final Research Achievements

We obtained compressively strained silicon/silicon-carbon heterostructures on argon ion implanted silicon (100) substrates. The heterostructure was found to be stable at 800 degree Celsius and reduction of substitutional carbon was found with annealing more than 900 degree Celsius. Implantation energy must be smaller than 45keV to obtain high-quality heterostructures.

Free Research Field

結晶工学