Coherent growth of high-quality group-III nitirides on SiC substrates and its device applications

2015 Fiscal Year Final Research Report

• Project/Area Number: 24360009
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Partial Multi-year Fund
• Section: 一般
• Research Field: Applied materials science/Crystal engineering
• Research Institution: Kyoto University
• Principal Investigator: Suda Jun 京都大学, 工学(系)研究科(研究院), 准教授 (00293887)
• Project Period (FY): 2012-04-01 – 2016-03-31
• Keywords: 窒化アルミニウム / 炭化珪素 / 分子線エピタキシー / 結晶成長 / 転位

Outline of Final Research Achievements

Coherent Growth of high-Al-content AlGaN on SiC substrates aiming at device applications were investigated. As high-Al-content AlGaN, AlN/GaN short-period superlattices were grown. Various kinds of AlN/GaN Superlattices were grown to assess critical composition as well as critical thickness for coherent growth on SiC substrates. Superlattices with GaN mole fraction of 20% were successfully growth coherently. On the other hand, it was found that growth of 3-bilayer-thick GaN results in lattice relaxation. The relaxation was gradual. By using this nature, strain-controlled AlN were grown on SiC substrates via ultra-thin GaN/AlN multilayer structures.

Free Research Field

結晶工学