2014 Fiscal Year Final Research Report
Development of macro-nano combined growth method for energy saving
| Project/Area Number |
24360012
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Partial Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Kyushu University |
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Principal Investigator |
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| Co-Investigator(Kenkyū-buntansha) |
NISHIZAWA Shin-ichi 独立行政法人産業技術総合研究所, エネルギー技術部門, 研究グループ長 (40267414)
NAKANO Satoshi 九州大学, 応用力学研究所, 技術専門職員 (80423557)
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| Project Period (FY) |
2012-04-01 – 2015-03-31
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| Keywords | 昇華法 / ワイドバンドギャップ / SiC |
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| Outline of Final Research Achievements |
The effect of nitrogen and aluminum as doped impurities on the stability of SiC polytypes (C- or Si-face 4H and 6H substrates) formed by physical vapor transport (PVT) was investigated. The stability of the polytypes was analyzed using classical thermodynamic nucleation theory with numerical results obtained from a global model including heat, mass and species transfer in a PVT furnace. The results reveal that the formation of 4H-SiC was more stable than that of 6H-SiC when a grown crystal was doped with nitrogen using C-face 4H- and 6H-SiC as seed crystals. In contrast, formation of 6H-SiC was favored over 4H-SiC when Si-face 4H- and 6H-SiC seed crystals were used. Meanwhile, the formation of 4H-SiC was more stable than that of 6H-SiC when aluminum was the dopant and C- and Si-faces of 6H-SiC were used as seed crystals. Formation of 6H-SiC occurred over that of 4H-SiC in the cases of C- and Si-faces of 4H-SiC as seed crystals.
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| Free Research Field |
結晶成長
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