A new opwerating mode of SiC-buried gate static induction transistor with untra-low on-resistance

2014 Fiscal Year Final Research Report

• Project/Area Number: 24560327
• Research Category: Grant-in-Aid for Scientific Research (C)
• Allocation Type: Multi-year Fund
• Section: 一般
• Research Field: Power engineering/Power conversion/Electric machinery
• Research Institution: University of Yamanashi
• Principal Investigator: YANO Koji 山梨大学, 総合研究部, 教授 (90252014)
• Co-Investigator(Kenkyū-buntansha): YAMAMOTO Masayuki 山梨大学, 大学院総合研究部, 助教 (00511320)
• Co-Investigator(Renkei-kenkyūsha): TANAKA Yasunori 産業技術総合研究所, 先進パワーエレクトロニクス研究センター, 主任研究員 (20357453) ; YATSUO Tsutomu 産業技術総合研究所, 先進パワーエレクトロニクス研究センター, 非常勤研究員 (10399503)
• Project Period (FY): 2012-04-01 – 2015-03-31
• Keywords: パワーデバイス / ワイドバンドギャップ

Outline of Final Research Achievements

A new operating mode using the weak injection of the minority carrier was proposed for the SiC-buried gate static induction transistor (SiC-BGSIT). This project made clear the operating principle and design method. a 3.3kV SiC-BGSIT was also developed. The switching power dissipation drastically decreased with the increase of input voltage from 2.5V to 7.5V. Further increase of the input voltage rather increase the input power dissipation because of the increase of the input current.
3.3kV normally-off SiC-BGSITs were developed and its design method was made clear. The developed BGSIT had the smallest on-resistance among the power transistors having the same voltage rating.

Free Research Field

半導体工学