2015 Fiscal Year Final Research Report
Development of InGaAs/InAs on Silicon light emitting devices for environmental analyses
| Project/Area Number |
24681026
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| Research Category |
Grant-in-Aid for Young Scientists (A)
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| Allocation Type | Partial Multi-year Fund |
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| Research Field |
Microdevices/Nanodevices
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| Research Institution | Tohoku University |
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Principal Investigator |
Higo Akio 東北大学, 原子分子材料科学高等研究機構, 助教 (60451895)
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| Project Period (FY) |
2012-04-01 – 2016-03-31
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| Keywords | MOVPE / InGaAs |
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| Outline of Final Research Achievements |
We have studied on III-V compound semiconductor materials growth on silicon substrate for Si/III-V monolithic integration and optical characteristics by photoluminescence. We have successfully fabricated InGaAs layer on silicon substrate and observed 1y00nm wavelength by photoluminescence measurement. Infra red emitting devices have much attention for gases sensing in the environmental analyses and it it possible to realize the integration of III-V emitting device and Si LSI.
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| Free Research Field |
Optical MEMS
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