In-situ scanning tunneling microscopy of initial formation process of metal silicide

2013 Fiscal Year Final Research Report

• Project/Area Number: 24760031
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Multi-year Fund
• Research Field: Thin film/Surface and interfacial physical properties
• Research Institution: Toyota Technological Institute (2013); Waseda University (2012)
• Principal Investigator: KAMIOKA Takefumi 豊田工業大学, 工学(系)研究科(研究院), 研究員 (00434332)
• Project Period (FY): 2012-04-01 – 2014-03-31
• Keywords: シリコン / ニッケル / 走査型トンネル顕微鏡 / イオン銃 / シリサイド / 欠陥 / 核形成

Research Abstract

In this project, the interaction of low-energy metal ions with silicon (Si) crystalline surface was investigated in atomistic scale. In-situ real-time observation of Si surfaces modified with nickel (Ni) ions was performed by using our original ion gun and scanning tunneling microscopy (IG/STM) combined system. The snapshots of Ni ion irradiation process onto Si(111) surfaces revealed the initial formation processes of Ni silicide; Ni silicide selectively nucleates not only at the step edges, but also the peripheries of vacancy clusters formed by the ion irradiation. This indicates a strong interaction between Ni atoms and vacancy-type defects. We also demonstrated for the first time in-situ observation of the shadowing effect during ion irradiation on a wire-patterned Si surface. The STM images clearly showed the boundary between the irradiated and the unirradiated region formed by the wire-structure. This new method can be applied to monitor roughness evolution in atomistic scale.

Research Products

• [Presentation] Real-time scanning tunneling microscopy observation of Ni ion irradiation process on Si(111) surfaces (2013)
  • Author(s): K. Mura, T. Kamioka, T. Kitani, K. Imazu, T. Watanabe
  • Organizer: 12th international conference on atomically controlled surfaces, interfaces and nanostructures, in conjuction with 21st international colloquium on scanning probe microscopy
  • Place of Presentation: Ibaraki, Japan
  • Year and Date: 20131104-08
• [Presentation] Si(111)表面へのNiイオン照射過程のリアルタイムSTM観察 (2013)
  • Author(s): 武良光太郎,神岡武文,木谷哲,今津研太,渡邉孝信
  • Organizer: 第74回応用物理学会秋季学術講演会
  • Place of Presentation: 京都,日本
  • Year and Date: 20130916-20
• [Presentation] シャドーイング効果を利用した低エネルギーイオン誘起損傷のその場STM観察 (2013)
  • Author(s): 武良光太郎,神岡武文,礒野文哉,川村祐士,鹿浜康寛,山下広樹,山田康平,小杉山洋希,橋本修一郎,渡邉孝信
  • Organizer: 第60回応用物理学会春季学術講演会
  • Place of Presentation: 神奈川,日本
  • Year and Date: 20130327-30
• [Presentation] In-situ scanning tunneling microscopy of shadowing effects of angled ion implantation on patterned Si surface (2012)
  • Author(s): F. Isono, T. Kamioka, Y. Kawamura, Y.Shikahama, H. Yamashita, K. Yamada, K. Mura, H. Kosugiyama, S. Hashimoto, T. Watanabe
  • Organizer: The 34th International Symposium on Dry Process
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 20121115-16