2015 Fiscal Year Final Research Report
Study on physics of accumulated spins and pure spin currents in Si
| Project/Area Number |
25246019
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied materials
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| Research Institution | Kyoto University |
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Principal Investigator |
Shiraishi Masashi 京都大学, 工学(系)研究科(研究院), 教授 (30397682)
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| Co-Investigator(Kenkyū-buntansha) |
Ando Yuichiro 京都大学, 大学院工学研究科, 助教 (50618361)
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| Project Period (FY) |
2013-05-31 – 2016-03-31
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| Keywords | スピントロニクス / シリコン / スピントランジスタ / スピンカロリトロニクス / スピン流 |
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| Outline of Final Research Achievements |
Significant milestones achieved in this research project are: (1) creation of Si spin MOS transistors, which can replace conventional Si CMOS devices, and its room temperature operations, and (2) observation of spincaloritronic effects in Si, which allows solving a tremendous waste heat issue in Si CMOS devices.
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| Free Research Field |
物性物理・スピントロニクス
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