タンデム型熱電セル作製のための高品質混晶半導体結晶成長と溶質輸送効果の解明

2014 Fiscal Year Annual Research Report

• Project/Area Number: 25289087
• Research Institution: Shizuoka University
• Principal Investigator: 早川 泰弘 静岡大学, 電子工学研究所, 教授 (00115453)
• Co-Investigator(Kenkyū-buntansha): 池田 浩也 静岡大学, 電子工学研究所, 准教授 (00262882) ; 立岡 浩一 静岡大学, 工学(系)研究科(研究院), 教授 (40197380) ; 稲富 裕光 独立行政法人宇宙航空研究開発機構, その他部局等, 教授 (50249934) ; ムカンナン アリバナンドハン 静岡大学, 電子工学研究所, 助教 (50451620) [Withdrawn] ; 岡野 泰則 大阪大学, 基礎工学研究科, 教授 (90204007)
• Project Period (FY): 2013-04-01 – 2016-03-31
• Keywords: 熱電デバイス / 混晶半導体 / シリコンゲルマニウム / ゼーベック係数 / シリコンゲルマニウム / 性能指数 / 温度差徐冷法 / ガリウム

Outline of Annual Research Achievements

本研究の目的は、SiGeとMg2SiGeタンデム型熱電セルを作製し廃熱の有効利用に寄与することである。そのために、SiGe混晶半導体バルク結晶成長に対する溶質輸送効果を明らかにし、高品質な結晶成長技術を開発する。 (1) X線透過法によるSiGe高温溶液中の濃度分布その場観察実験と数値解析による溶質輸送効果の把握、(2) 温度差徐冷法と熱パルス導入法を組み合わせた方法及び静磁場印加対流抑制法による均一組成SixGe1-x単結晶成長技術の開発、(3)不純物ドーピングと形態制御の最適化による熱電特性向上を図り、(4) SiGeとMg2SiGeタンデム型熱電セルを試作する。
25年度はX線透過法を用いてSi供給原料溶解過程、Si-Ge溶液中の濃度分布、SiGe結晶成長過程を時間の関数として測定し、SiGe混晶半導体結晶成長に対する溶質輸送効果を調べた。26年度は、温度差徐冷法により均一組成Si0.68Ge0.32結晶を成長させた。p型不純物としてGa添加し、欠陥分布、抵抗率、ゼーベック係数、熱伝導率の温度依存性を測定した。ゼーベック係数は温度上昇とともに高くなり、約900 Kで最大値371 µV/Kを示した。パワーファクターは報告値よりも高い値が得られた。ボールミリング法とホットプレス法によりP添加n型SiGeナノ結晶を成長させ、1073 Kで性能指数ZTが1.84を得た。これは、通常のn型SiGe合金の値で34 %高い値であった。

Current Status of Research Progress

2: Research has progressed on the whole more than it was originally planned.

Reason

本研究の目的の中の均一組成SixGe1-x単結晶成長技術の開発と熱電特性の向上に関して成果が得られた。熱電材料に関する研究成果が学術論文, J.Materials Chemistry A (IF6.108)やCrystal Growth & Design （IF: 4.558）等6編に採択されており、研究はおおむね順調に進展していると判断している。

Strategy for Future Research Activity

今後、不純物ドーピングと形態制御の最適化による熱電特性向上を図り、SiGeとMg2SiGeタンデム型熱電セルを試作することに挑戦する。

Research Products

• [Journal Article] High power factor of Ga-doped compositionally homogeneous Si0.68Ge0.32 bulk crystal grown by the vertical temperature gradient freezing method (2015)
  • Author(s): M.Omprakash, M.Arivanandhan, T.Koyama, Y.Momose, H.Ikeda, H.Tatsuoka, D.K. Aswal, S.Bhattacharya, Y.Okano, T.Ozawa, Y.Inatomi, S.Moorthy Babu and Y.Hayakawa
  • Journal Title: Crystal Growth & Design Volume: 15 Pages: 1380-1388
  • DOI: 10.1021/cg501776h
  • Peer Reviewed / Open Access / Acknowledgement Compliant
• [Journal Article] Improved thermoelectric performance of hot pressed nanostructured n-type SiGe bulk alloys (2014)
  • Author(s): .Basu, S.Bhattacharya, R.Bhatt, M.Roy, S.Admad, A.Singh, M.Navaneethan, Y.Hayakawa, D.K.Aswal and S.K.Gupta
  • Journal Title: ,J.Materials Chemistry A Volume: 2 Pages: 6922-6930
  • DOI: 10.1039/c3ta14259k
  • Peer Reviewed / Open Access
• [Journal Article] Tailoring bismuth telluride nanostructures using a scalable sintering process and their thermoelectric properties (2014)
  • Author(s): P.Anandan, M.Omplrakash, M.Arivanandhan, D.Rajan Babu, T.Koyama and Y.Hayakawa
  • Journal Title: CrystEngComm Volume: 16 Pages: 7956-7962
  • DOI: 10.1039/c4ce00837e
  • Peer Reviewed / Open Access / Acknowledgement Compliant
• [Journal Article] Thermoelectric performance of layered SrxTiSe2 above 300 K (2014)
  • Author(s): R.Bhatt, S.Bhattacharya, M.Patel, R.Basu, SAhmed, P.Bhatt, AChauhan, M.Navneethan, Y.Hayakawa, A.Singh, D.Aswal and S.Gupta
  • Journal Title: Journal of Physics: Condensed Matter Volume: 26 Pages: 445002-1-8
  • DOI: 10.1088/0953-8984/26/44/445002
  • Peer Reviewed / Open Access
• [Journal Article] High thermoelectric performance of (AgCrSe2)0.5(CuCrSe2)0.5 nanocomposites having all-scale natural hierarchical architectures (2014)
  • Author(s): S.Bhattacharya, A.Bohra, R.Basu, R.Bhatt, S.Ahmad, K.N.Meshram1, A.K.Debnath, A.Singh, S.K.Sarkar, M.Navneethan, Y.Hayakawa, D.K.Aswal and S.K.Gupta
  • Journal Title: J.Materials Chemistry A Volume: 2 Pages: 17122-17129
  • DOI: 10.1039/c4ta04056b
  • Peer Reviewed / Open Access
• [Journal Article] Enhanced thermoelectric properties of Selenium-deficient layered TiSe2-x: A charge-density-wave material (2014)
  • Author(s): Ranu Bhatt, Shvit Bhattacharya, Ranita Basu, Sajid Ahmed, A.K.Chauhan, G.S.Okram, Pramod Bhatt, Mainak Roy, M.Navaneethan, Y.Hayakawa, A.K.Debnath, Ajay Singh, D.K.Aswal and S. K.Gupta
  • Journal Title: ACS Applied Materials & Interfaces Volume: 6 Pages: 18619-18625
  • DOI: 10.1021/am503477z
  • Peer Reviewed / Open Access
• [Presentation] 基板貼り合わせ法で作製したp 型GOI 層のゼーベック係数 (2015)
  • Author(s): 池田浩也、ベラッパン マニムス、ムスサミオム プラカシュ、鈴木悠平、ファイズサレ、ムカンナン アリバナンドハン、鎌倉良成、早川泰弘
  • Organizer: 第62回応用物理学春季学術講演会
  • Place of Presentation: 東海大学湘南キャンパス、神奈川県平塚市
  • Year and Date: 2015-03-11 – 2015-03-14
• [Presentation] Thermoelectric properties of compositionally homogeneous p and n-type SiGe bulk crystals (2015)
  • Author(s): M.Omprakash, M.Arivanandhan, T.Koyama, Y.Momose, H.Ikeda, H.Tatsuoka, Y.Okano T.Ozawa, Y.Inatomi, S. Bhattacharya, D.K.Aswal, S.Moorthy Babu and Y.Hayakawa
  • Organizer: 第62回応用物理学春季学術講演会
  • Place of Presentation: 東海大学湘南キャンパス、神奈川県平塚市
  • Year and Date: 2015-03-11 – 2015-03-14
• [Presentation] 高効率熱電変換デバイス用SiGe混晶のゼーベック係数 (2015)
  • Author(s): 池田浩也、ベラッパン マニムス、ムスサミ オムプラカシュ、鈴木悠平、ファイズ サレ、ムカンナン アリバナンドハン、鎌倉良成、早川泰弘
  • Organizer: 電子情報通信学会SDM研・ED研合同2月研究会「機能ナノデバイスおよび関連技術」
  • Place of Presentation: 北海道大学・百年記念会館、北海道札幌市
  • Year and Date: 2015-02-05 – 2015-02-06
• [Presentation] Growth of homogeneous p-type and n-type Si1-xGex for thermoelectric application (2015)
  • Author(s): Y.Hayakawa, M.Arivanandhan, M.Omprakash, T.Koyama, Y.Momose, H.Ikeda, H.Tatsuoka, Y.Okano, T.Ozawa. Y.Inatomi, D.K.Aswal, S.Bhattacharya and S.Moorthy Babu
  • Organizer: International Conference on Nanoscience and Nanotechnology (ICONN 2015), IL-20, pp.20 (February 4th – 6th, 2015, Department of Physics and Nanotechnology
  • Place of Presentation: SRM University, Kattankulathur, Kancheepuram, India
  • Year and Date: 2015-02-04 – 2015-02-06
  • Invited
• [Presentation] Growth of compositionally homogeneous P-type SiGe bulk and thermoelectric properties (2015)
  • Author(s): M.Omprakash, M.Arivanandhan, T.Koyama, Y.Momose, H.Ikeda, H.Tatsuoka, D.K.Aswal, S.Bhattacharya, Y.Okano, T.Ozawa, Y.Inatomi, S.Moorthy Babu and Y.Hayakawa
  • Organizer: International Symposium toward the Future of Advanced Researches in Shizuoka University
  • Place of Presentation: Shizuoka University, Hamamatsu, Shizuoka
  • Year and Date: 2015-01-27 – 2015-01-28
• [Presentation] Phonon-drag contribution to Seebeck coefficent in p-type Si, Ge and Si-Ge (2015)
  • Author(s): V.Manimuthu, M.Omprakash, Y.Suzuki, F.Salleh, M.Arivanandhan, Y.Kamakura, Y.Hayakawa and H.Ikeda
  • Organizer: International Symposium toward the Future of Advanced Researches in Shizuoka University
  • Place of Presentation: Shizuoka University, Hamamatsu, Shizuoka
  • Year and Date: 2015-01-27 – 2015-01-28
• [Presentation] Synthesis of nanostructured bismuth telluride and functional properties (2015)
  • Author(s): M.Sabarinathan, M.Navaneethan, M.Omprakash, T.Koyama and Y.Hayakawa
  • Organizer: SRM University - Shizuoka University Joint Symposium
  • Place of Presentation: Shizuoka University, Hamamatsu, Shizuoka
  • Year and Date: 2015-01-07 – 2015-01-07
• [Presentation] Thermoelectric chracteristics of Ge and SiGe nanostructures (2015)
  • Author(s): .Manimuthu, M.Omprakash, F.Salleh, M.Arivanandhan, Y.Hayakawa and H.Ikeda
  • Organizer: SRM University - Shizuoka University Joint Symposium
  • Place of Presentation: Shizuoka University, Hamamatsu, Shizuoka
  • Year and Date: 2015-01-07 – 2015-01-07
• [Presentation] Thermoelectric characteristics of Si- and Ge-on-insulator layers for predicting those of SiGe nanostructures (2014)
  • Author(s): V.Manimuthu, S.Yoshida, Y.Suzuki, F.Salleh, M.Arivanandhan, Y.Kamakura, Y.Hayakawa and H.Ikeda
  • Organizer: The Forum on the Science and Technology of Silicon Materials
  • Place of Presentation: Act city conference hall, Hamamatsu, Shizuoka
  • Year and Date: 2014-10-19 – 2014-10-22
• [Presentation] Thermoelectric properties of compositionally homogeneous Ga-doped SiGe bulk crystals (2014)
  • Author(s): Y.Hayakawa, M.Omprakash, M.Arivanandhan, T.Koyama, Y.Momose, H.Ikeda, H.Tatsuoka, Y.Okano, T.Ozawa, Y.Inatomi and S. Moorthy Babu
  • Organizer: 12th European Conference on Thermoelectricity (ECT2014)
  • Place of Presentation: Madrid, Spain
  • Year and Date: 2014-09-24 – 2014-09-26
• [Presentation] Growth of compositionally homogeneous P-type Si1-xGex bulk crystal for thermoelectric application (2014)
  • Author(s): M.Omprakash, M.Arivanandhan, T.Koyama, Y.Momose, H.Ikeda, H.Tatsuoka, Y.Okano, T.Ozawa, Y.Inatomi, S.Moorthy Babu, D.K. Aswal, S. Bhattacharya and Y.Hayakawa
  • Organizer: 第74回応用物理学会学術講演会
  • Place of Presentation: (北海道大学札幌キャンパス、北海道札幌市
  • Year and Date: 2014-09-17 – 2014-09-20
• [Presentation] In-situ observation of dissolution and growth processes of Si1-xGex in different temperature gradient (2014)
  • Author(s): M.Omprakash, M.Arivanandhan, H.Morii, T.Aoki, T.Koyama, Y.Momose, H.Ikeda, H.Tatsuoka, Y.Okano, T.Ozawa, Y.Inatomi, S.Moorthy Babu and Y.Hayakawa
  • Organizer: 13th International Conference on Global Research and Education (Inter-Academia 2014)
  • Place of Presentation: Riga Technical University, Riga, Latvia
  • Year and Date: 2014-09-10 – 2014-09-12
• [Presentation] Phonon-drag contribution to seebeck coefficient of Ge- and Si-on-insulator layers (2014)
  • Author(s): V.Manimuthu, S.Yoshida, Y.Suzuki, F.Salleh, M.Arivanandhan, Y.Kamakura, Y.Hayakawa and H.Ikeda
  • Organizer: 13th International Conference on Global Research and Education (Inter-Academia 2014)
  • Place of Presentation: Riga Technical University, Riga, Latvia
  • Year and Date: 2014-09-10 – 2014-09-12
• [Presentation] 均一組成SiGe結晶成長と熱電特性 (2014)
  • Author(s): 早川泰弘、M.Omprakash、M.Arivanandhan、小山忠信、百瀬与志美、池田浩也、立岡浩一、 岡野泰則、小澤哲夫、稲富裕光、S.Moorthy Babu、 D.K. Aswal、S.Bhattachary
  • Organizer: 電研共同研究プロジェクト・工学研究科プロジェクト合同研究会
  • Place of Presentation: 静岡大学電子工学研究所、静岡県、浜松市
  • Year and Date: 2014-07-25 – 2014-07-25
• [Presentation] Ga doped Si1-xGex bulk crystal with homogenous compositon and its thermoelectric properties (2014)
  • Author(s): M.Omprakash, V. Nirmal Kumar, M.Arivanandhan, T.Koyama, Y.Momose, H.Ikeda, H.Tatsuoka, Y.Okano, T.Ozawa, Y.Inatomi, S.Moorthy Babu and Y.Hayakawa
  • Organizer: International Conference and Summar School on Advanced Silicide Technology 2014
  • Place of Presentation: Tokyo University of Science, Katsushika Campus, Katsushika, Tokyo
  • Year and Date: 2014-07-19 – 2014-07-21
• [Presentation] Seebeck coefficient of germanium-on-insulator for high-sensitive infrared photodetector (2014)
  • Author(s): V.Manimuthu, S.Yoshida, Y.Suzuki, F.Salleh, M.Arivanandhan, Y.Hayakawa and H.Ikeda
  • Organizer: 2014 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices
  • Place of Presentation: Kanazawa Bunka Hall, Kanazawa, Ishikawa
  • Year and Date: 2014-07-01 – 2014-07-03
• [Remarks] 静岡大学早川研究室
  • URL: http://maruhan.rie.shizuoka.ac.jp/