Synthesis and new functionality development of powder materials for the rare metal-free transparent conductive thin film

2015 Fiscal Year Final Research Report

• Project/Area Number: 25289245
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Partial Multi-year Fund
• Section: 一般
• Research Field: Structural/Functional materials
• Research Institution: Tohoku University
• Principal Investigator: YIN SHU 東北大学, 多元物質科学研究所, 准教授 (40271994)
• Co-Investigator(Kenkyū-buntansha): SATO Tsugio 東北大学, 多元物質科学研究所, 教授 (90091694) ; DONG Qiang 東北大学, 多元物質科学研究所, 助教 (00643230)
• Project Period (FY): 2013-04-01 – 2016-03-31
• Keywords: レアメタルフリー / 透明導電性 / 薄膜 / 新規機能性 / 溶液プロセス

Outline of Final Research Achievements

Until now, ITO or metal thin films are mainly utilized. The ITO consists of rare metal element Indium , so the stable supplement that corresponds to the rapid expansion of the ongoing demand in the future has been worried. Usually, metal thin films show a low transparency. Therefore, the development of an inexpensive conductive thin film material consists of In-free elements, a novel synthesis process to replace the sputtering thin film method is an urgent topic. In the present research, by using a solution process of about 90-200oC, we have successfully synthesized the mixed-valence state tungsten compound, and also successfully precipitated the conductive zinc oxide thin film directly on a glass substrate. By controlling the orientated growth of ZnO along c- axis direction, the great improvement on both transparency and conductivity was successfully realized

Free Research Field

無機材料化学