Crystal growth of high-quality InGaSb by cotrolling convection

2016 Fiscal Year Final Research Report

• Project/Area Number: 25289270
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Partial Multi-year Fund
• Section: 一般
• Research Field: Metal making/Resorce production engineering
• Research Institution: Japan Aerospace EXploration Agency
• Principal Investigator: Inatomi Yuko 国立研究開発法人宇宙航空研究開発機構, 宇宙科学研究所, 教授 (50249934)
• Co-Investigator(Kenkyū-buntansha): 早川 泰弘 静岡大学, 電子工学研究所, 教授 (00115453)
• Co-Investigator(Renkei-kenkyūsha): Mukannan, Arivanandhan 静岡大学, 電子工学研究所, 助教 (50451620)
• Project Period (FY): 2013-04-01 – 2017-03-31
• Keywords: 対流制御 / 均一組成結晶 / InGaSb / 不純物縞 / 界面カイネティクス / 面方位依存性 / 成長速度

Outline of Final Research Achievements

The following phenomena were found under reduced convection conditions. 1) The composition concentrations in the crystals become more uniform than the normal condition, and this leads to improved quality with less defects; it also accelerates the growth of the crystals. Under the normal condition the growth rate was damped because buoyancy convection prevented diffusive transport of GaSb in InGaSb melt to the growth surface from the feed. 2) The initial growth morphology for both (111)A and (111)B samples were almost flat because of the anisotropic growth kinetics. The differences of the dissolution length and growth rates can be explained by attribution of different number bonds in unit cell at the crystal surfaces.

Free Research Field

凝固・結晶成長、熱物性、熱物質輸送、非接触計測