A study of the distributed MIM tunnel diode for extracting a weak power from the room-temperature thermal radiation

2015 Fiscal Year Final Research Report

• Project/Area Number: 25630156
• Research Category: Grant-in-Aid for Challenging Exploratory Research
• Allocation Type: Multi-year Fund
• Research Field: Electron device/Electronic equipment
• Research Institution: National Institute of Information and Communications Technology
• Principal Investigator: Kawakami Akira 国立研究開発法人情報通信研究機構, 未来ICT研究所ナノICT研究室, 主任研究員 (90359092)
• Project Period (FY): 2013-04-01 – 2016-03-31
• Keywords: 中赤外 / アンテナ / MIMダイオード / マイクロストリップ

Outline of Final Research Achievements

To develop the mid-infrared rectenna, the mid-infrared microstrip line and the distributed Metal-Insulator-Metal (MIM) tunnel diode were studied. First, a micro-fabrication process of a metal thin film using an electron beam lithography system was developed to fabricate microstrip resonators. By the evaluation of the resonators using a spectrometer, the phase velocity of the mid-infrared microstrip line was estimated. Further the MIM diodes were fabricated, and the non-linear characteristics of the diodes were observed.

Free Research Field

超伝導エレクトロニクス