Current driven domain wall motion of the reflux type magnetic wires with symmetric and asymmetric magnetic wire

2014 Fiscal Year Final Research Report

• Project/Area Number: 25820127
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Multi-year Fund
• Research Field: Electronic materials/Electric materials
• Research Institution: Toyota Technological Institute
• Principal Investigator: BANG Do 豊田工業大学, 工学(系)研究科(研究院), 研究員 (40624804)
• Project Period (FY): 2013-04-01 – 2015-03-31
• Keywords: 還流型磁性細線 / 磁壁電流駆動 / スピンオービトロ二クス / 希土類遷移金属合金 / 対称・非対称構造 / スピンホール効果 / ジャロシンスキー守谷効果 / ラッシュバ効果

Outline of Final Research Achievements

In the current driven domain wall motion on the magnetic wire, Rashba effect, spin Hall effect, Dzyaloshinskii Moriya effect are very important to
control the domain wall. To create a reflux type magnetic wires, it is necessary to make a symmetrical structure and an asymmetric structure in the magnetic nanowire. When Pt and SiO2 layers were used for the asymmetric structure, the domain wall motion at conecting part between the symmetric and the asymmetric wire of the reflux type magnetic wires did not move smoothly. It is considered due to the difference in level of the switching part. To avoid the problem, 2nm Pt layer and 5nm Pt layers were used for the asymmetric part. In this case, domain wall can move smoothly at the swiching part of the new type reflux type magnetic wires. In the future, it is necessary to confirm the operation stability of the current driven domain wall motion.

Free Research Field

工学