Improvement of piezoelectric property of PZT thin films for MEMS by wakeup

2014 Fiscal Year Final Research Report

• Project/Area Number: 25820339
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Multi-year Fund
• Research Field: Inorganic materials/Physical properties
• Research Institution: National Institute of Advanced Industrial Science and Technology
• Principal Investigator: KOBAYASHI Takeshi 独立行政法人産業技術総合研究所, 集積マイクロシステム研究センター, 主任研究員 (20415681)
• Research Collaborator: FUNAKUBO Hiroshi 東京工業大学, 総合理工学研究科, 教授
• Project Period (FY): 2013-04-01 – 2015-03-31
• Keywords: 圧電 / 薄膜 / ポーリング / ＰＺＴ / ＭＥＭＳ

Outline of Final Research Achievements

We have investigated the influence of pulse poling on the piezoelectric property of Pb(Zr0.52,Ti0.48)O3 (PZT) thin films. 1.9-μm-thick PZT thin films were deposited by sol-gel method and fabricated into microelectromechanical systems (MEMS) based piezoelectric microcantilevers. 1 kHz of unipolar or bipolar triangle pulse wave between 30-100 V was applied to the PZT thin films. The effective piezoelectric constant d31, under small signal actuation at 1-3 Vpp, was estimated from the tip displacement of the piezoelectric microcantilevers. The highest piezoelectric constant |d31| as high as 105 pm/V has been obtained by downward unipolar pulse poling at 100 V.

Free Research Field

無機材料・物性