2015 Fiscal Year Final Research Report
Real-time observation of carrier dynamics at oxide semiconductor and metal interfaces
| Project/Area Number |
25870193
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Quantum beam science
Thin film/Surface and interfacial physical properties
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| Research Institution | The University of Tokyo |
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Principal Investigator |
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| Project Period (FY) |
2013-04-01 – 2016-03-31
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| Keywords | 時間分解 / 光電子分光 / 放射光 / キャリアダイナミクス / 酸化物半導体 / 光触媒 |
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| Outline of Final Research Achievements |
This study aimed to investigate site-specific carrier dynamics at oxide semiconductor and metal interfaces using time-resolved soft X-ray photoelectron spectroscopy. The relaxation time of photo-excited carriers at oxide surfaces were obtained by monitoring in real time the peak shift of core-level spectra due to a surface photovoltage effect.
The relaxation time of photo-excited carriers on the clean ZnO(0001) surface was about a few 10s ns, and decreased largely to below 1 ns on the Pt-deposited ZnO(0001) surface. The origin of shorter lifetime of photo-excited carriers could be the increase of the carrier recombination centers on the oxide surface by Pt deposition.
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| Free Research Field |
表面化学
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