Creation of nanocarbon quantum-dot photoelectric conversion devices by intelligent plasma control

2016 Fiscal Year Final Research Report

• Project/Area Number: 26286069
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Partial Multi-year Fund
• Section: 一般
• Research Field: Plasma electronics
• Research Institution: Tohoku University
• Principal Investigator: KANEKO Toshiro 東北大学, 工学(系)研究科(研究院), 教授 (30312599)
• Co-Investigator(Kenkyū-buntansha): 加藤 俊顕 東北大学, 工学(系)研究科(研究院), 講師 (20502082)
• Project Period (FY): 2014-04-01 – 2017-03-31
• Keywords: 気液界面プラズマ / ナノグラフェン / 量子ドット / 光電変換デバイス / 多重励起子生成 / 遷移金属ダイカルコゲナイド

Outline of Final Research Achievements

In order to create novel photoelectric conversion devices which can generate multiple excitons in the full-spectrum light region, we synthesized the n-type semiconducting carbon nanotube (CNT) which can extract the excitons from the nano-graphene or transition metal dichalcogenide (TMD), and then, fabricated the CNT/graphene・TMD photoelectric conversion devices. In the beginning, it was clarified that the nano-graphene can be formed on the CNT surface by irradiating the CNT with the methane plasma. We tried to dope nitrogen or cesium ions into the CNT by plasma ion irradiation method, and found that the n-type semiconducting CNT can be synthesized. Furthermore, we fabricated the CNT/TMD photoelectric conversion device and succeeded in photovoltaic power generation using the CNT/TMD device for the first time.

Free Research Field

プラズマエレクトロニクス