• Search Research Projects
  • Search Researchers
  • How to Use
  1. Back to project page

2017 Fiscal Year Final Research Report

Elucidation of UV irradiation effect in plasma etching process of wide gap semiconductors

Research Project

  • PDF
Project/Area Number 26390066
Research Category

Grant-in-Aid for Scientific Research (C)

Allocation TypeMulti-year Fund
Section一般
Research Field Thin film/Surface and interfacial physical properties
Research InstitutionUniversity of Hyogo

Principal Investigator

Niibe Masahito  兵庫県立大学, 高度産業科学技術研究所, 准教授 (10271199)

Co-Investigator(Renkei-kenkyūsha) KAWAKAMI Retsuo  徳島大学, ソシオテクノサイエンス研究部, 助教 (30314842)
NAKANO Yoshitaka  中部大学, 総合工学研究所, 教授 (60394722)
Research Collaborator KOTAKA Takuya  
SANO Keiji  
HIRAI Shodai  
ARAKI Yuma  
TANAKA Ryo  
Project Period (FY) 2014-04-01 – 2018-03-31
Keywordsプラズマエッチング / 紫外線照射 / ワイドギャップ半導体 / UV / GaN / TiO2
Outline of Final Research Achievements

For the defects generated in the plasma-etching process of the wide-gap semiconductors, a equipment capable of individually performing UV irradiation and ion-beam etching was prepared in order to investigate the effect of UV irradiation on the defect formation. However, with this equipment, no significant difference in UV irradiation could be detected. This is considered to be that the amount of ion flux is much smaller than that of plasma etching in the case of ion-beam etching and synergistic effect is less likely to occur. Therefore, we changed the policy slightly, tried plasma etching of AlGaN film etc. for Ar and CF4 or O2 and N2 which differed in UV emission, and further incorporated UV irradiator. It was found that the surface damage increased by UV irradiation, and defects can be formed in the form of pits.

Free Research Field

放射光科学

URL: 

Published: 2019-03-29  

Information User Guide FAQ News Terms of Use Attribution of KAKENHI

Powered by NII kakenhi