Preparation of thermal induced ME effect using tunneling spin Seebeck effect

2015 Fiscal Year Final Research Report

• Project/Area Number: 26600100
• Research Category: Grant-in-Aid for Challenging Exploratory Research
• Allocation Type: Multi-year Fund
• Research Field: Thin film/Surface and interfacial physical properties
• Research Institution: Nagoya Institute of Technology
• Principal Investigator: Yokota Takeshi 名古屋工業大学, 工学(系)研究科(研究院), 准教授 (10402645)
• Project Period (FY): 2014-04-01 – 2016-03-31
• Keywords: 電気磁気効果 / スピンゼーベック効果 / トンネル効果 / 薄膜結晶成長

Outline of Final Research Achievements

We investigated and demonstrated a thermal field response of an Artificial magneto-electric material Cr2O3　/Cr2O3±x/LiNbO3/Cr2O3±x/Cr2O3(CR-LN) multilayer using Spin Seebeck tunneling effetc. We got three results as follows; 1)A voltage was generated by the application of the thermal field in CR-LN system. 2) The voltage was degcresesd by the application of magenetic fields. 3) The polarization of tunneling layer play an important role for the thermal generated voltage. These three results we can conclude the thermal generated voltage in CR-LN system was closely related the tunneling effect, spin wave spin current, and ferroelectric polarization.

Free Research Field

固体物理学