Development of far-infrared detectors using Ge-Si junctions

2015 Fiscal Year Final Research Report

• Project/Area Number: 26610046
• Research Category: Grant-in-Aid for Challenging Exploratory Research
• Allocation Type: Multi-year Fund
• Research Field: Astronomy
• Research Institution: Nagoya University
• Principal Investigator: Kaneda Hidehiro 名古屋大学, 理学(系)研究科(研究院), 教授 (30301724)
• Co-Investigator(Renkei-kenkyūsha): OYABU Shinki 名古屋大学, 理学研究科, 助教 (10396806)
• Research Collaborator: HATTORI Yasuki ; KOBATA Kodai ; HANAOKA Misaki
• Project Period (FY): 2014-04-01 – 2016-03-31
• Keywords: 遠赤外線検出器 / Ge検出器

Outline of Final Research Achievements

We develop new far-infrared detectors using Ge-Si junctions. We expect to significantly elongate the cut-off wavelength of the detector beyond 110 microns, utilizing the mechanical stress applied to Ge due to the difference in the coefficient of thermal expansion between Si and Ge. In order to verify that, we have fabricated test junction devices and established a setup for measurement at low temperatures. As a result, we have obtained a hint of the elongation of the cut-off wavelength beyond 120 microns, using a Fourier transform spectrometer. However we could not obtain a decisive result due to rather poor signal-to-noise ratios. We have investigated the cause of the low sensitivity, fabricating junction devices with various kinds of electrodes.

Free Research Field

スペース赤外線天文学