Study on Ga2O3 based heterojunction for device applications

2016 Fiscal Year Final Research Report

• Project/Area Number: 26709020
• Research Category: Grant-in-Aid for Young Scientists (A)
• Allocation Type: Partial Multi-year Fund
• Research Field: Electronic materials/Electric materials
• Research Institution: Saga University (2016); Tokyo Institute of Technology (2014-2015)
• Principal Investigator: Oshima Takayoshi 佐賀大学, 工学(系)研究科(研究院), 助教 (60583151)
• Project Period (FY): 2014-04-01 – 2017-03-31
• Keywords: 酸化ガリウム / ヘテロ接合 / 変調ドープ

Outline of Final Research Achievements

For future realization of Ga2O3-based heterojunction devise, we compared two growth techniques of PLD and MBE, measured a band-alignment of (Al,Ga)2O3/Ga2O3 heterojunction, and evaluated electrical properties of modulation-doped (Al,Ga)2O3/ Ga2O3 structure. We found that MBE was better suited for obtaining flat film surface. While the (Al,Ga)2O3/Ga2O3 was found to be the Type I junction with 2:1 conduction-valence band discontinuity ratio. Furthermore, carrier confinement at the modulation-doped heterojunction was observed for the first time in the Ga2O3-based semiconductor. These findings suggest the future realization of Ga2O3 heterojunction devices.

Free Research Field

半導体工学