| Project Area | Creation and control of spin current |
|---|
| Project/Area Number |
19048030
|
|---|
| Research Category |
Grant-in-Aid for Scientific Research on Priority Areas
|
| Allocation Type | Single-year Grants |
|---|
| Review Section |
Science and Engineering
|
|---|
| Research Institution | National Institute of Advanced Industrial Science and Technology |
|---|
Principal Investigator |
AKINAGA Hiroyuki National Institute of Advanced Industrial Science and Technology, ナノ電子デバイス研究センター, 副研究センター長 (90221712)
|
|---|
| Co-Investigator(Kenkyū-buntansha) |
SUEMASU Takashi 国立大学法人筑波大学, 大学院・数理物質科学研究科, 教授 (40282339)
|
|---|
| Project Period (FY) |
2007 – 2010
|
| Project Status |
Completed (Fiscal Year 2010)
|
| Budget Amount *help |
¥33,000,000 (Direct Cost: ¥33,000,000)
Fiscal Year 2010: ¥7,300,000 (Direct Cost: ¥7,300,000)
Fiscal Year 2009: ¥9,200,000 (Direct Cost: ¥9,200,000)
Fiscal Year 2008: ¥9,200,000 (Direct Cost: ¥9,200,000)
Fiscal Year 2007: ¥7,300,000 (Direct Cost: ¥7,300,000)
|
|---|
| Keywords | MBE / エピタキシャル / 磁性 / スピンエレクトロニクス / ナノ材料 / 半導体物性 / MBE,エピタキシャル / MBE, エピタキシャル |
|---|
| Research Abstract |
To promote integration of 'spintronics' and 'the silicon technology', we are focusing on the actualization of a highly effective spin-injection in the silicon-based device with the aims of "Development of silicon-based ferromagnets", "Demonstration of the spin-injection in ferromagnetic metal / silicon heterostructures". We have succeeded in showing that γ'-Fe4N possesses the high spin polarization (0.59) and the large magnetic moment (2.45μB/Fe). The successful operation of epitaxial CaF_2/Fe_3Si/CaF_2 ferromagnetic resonant tunneling diode was also demonstrated.
|
