| Budget Amount *help |
¥33,400,000 (Direct Cost: ¥33,400,000)
Fiscal Year 2011: ¥2,400,000 (Direct Cost: ¥2,400,000)
Fiscal Year 2010: ¥4,100,000 (Direct Cost: ¥4,100,000)
Fiscal Year 2009: ¥6,500,000 (Direct Cost: ¥6,500,000)
Fiscal Year 2008: ¥9,800,000 (Direct Cost: ¥9,800,000)
Fiscal Year 2007: ¥10,600,000 (Direct Cost: ¥10,600,000)
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| Research Abstract |
We synthesized amorphous semiconductor films composed of transition metal encapsulating Si clusters (MSi_n) on solid substrates. The MSi_n film has higher carrier mobility than hydrogenated amorphous Si. We observed clearly the electric field effect on electrical conduction in the MSi_n films. Moreover, we have succeeded in formation of the hetero-epitaxial WSi_n layer on the Si substrate, enabling us to fabricate a low-barrier hetero junction contact to n-Si.
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