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STUDY OF ULTRA-THIN-FILM/ULTRA-FINE-STRUCTURE DEVEICES

Research Project

Project/Area Number 08044134
Research Category

Grant-in-Aid for international Scientific Research

Allocation TypeSingle-year Grants
SectionJoint Research
Research Field Applied materials science/Crystal engineering
Research InstitutionTOKYO INSTITUTE OF TECHNOLOGY

Principal Investigator

ODA Shunri  TOKYO INSTITUTE OF TECHNOLOGY : PROFESSOR, 量子効果エレクトロニクス研究センター, 教授 (50126314)

Co-Investigator(Kenkyū-buntansha) KASTNER Marc  MASSACHUSETTS INSTITUTE OF TECHNOLOGY : PROFESSOR, 教授
MILNE William  UNIVERSITY OF CAMBRIDGE : PROFESSOR, 工学部, 教授
MOORE David  UNIVERSITY OF CAMBRIDGE : ASSOC.PROFESSOR, 工学部, 助教授
SUGIURA Osamu  TOKYO INSTITUTE OF TECHNOLOGY : ASSOC.PROFESSOR, 工学部, 助教授 (10187643)
MATSUMURA Masakiyo  TOKYO INSTITUTE OF TECHNOLOGY : PROFESSOR, 工学部, 教授 (30110729)
KASTNER Mark  マサチューセッツ工科大学, 教授
伊藤 明  東京工業大学, 工学部, 助手 (30282833)
Project Period (FY) 1996 – 1997
Project Status Completed (Fiscal Year 1997)
Budget Amount *help
¥10,000,000 (Direct Cost: ¥10,000,000)
Fiscal Year 1997: ¥5,000,000 (Direct Cost: ¥5,000,000)
Fiscal Year 1996: ¥5,000,000 (Direct Cost: ¥5,000,000)
KeywordsUltrahigh Speed Devices / Superconducting DEvices / Nanofabrications / Electron Beam Lighography / Ultrathinfilm Crystal Growth / Quantum Effect Devices / Atomic Layr Epitaxy / Thinfilm Transistors
Research Abstract

1.Silicon quantum dots with size less than 10nm were prepared by plasma processes. Uniform dot size was obtained based on the idea of the separation of nucleation and crystal growth using pulsed gas methods and understanding of the crystal growth mechanisms. Oxidation of nanocrystalline silicon was also investigated.
2.Ultrasmall-gap polisilicon electrodes were fabricated by electron beam lithography and electron cyclotron resonance plasma reactive ion etching methods. 10-20nm gap electrodes were successfully prepared by the two-step exposere method. Single electron transport characteristics were observed in samples with deposited nanocrystalline silicon.
3.Ultrathin films of oxide superconductors and insulator heterostructures were prepared by the atomic layr metalorganic chemical vapor deposition method. Reproducibility of thinfilms gabrication was enhanced by using in situ monitoring based on ultrasonic transducers and spectroscopic ellisonetry.
4.Superconducting field effect was enhanced by the combination of Josephson junctions and planar type devices.
5.Anomolous current voltage characteristics due to intrinsic Josephson junctions were observed in YBCO thinfilm deveices fabricated by scanning probe microscopy lithography.
6.Atomic layr epitaxy of silicon on Si (100) was investigated. Self-limiting growth conditions were clarified on the basis of formation of SiHCl due to reaction in the gas phase.

Report

(3 results)
  • 1997 Annual Research Report   Final Research Report Summary
  • 1996 Annual Research Report
  • Research Products

    (341 results)

All Other

All Publications (341 results)

  • [Publications] M.Otobe,H.Yajima and S.Oda: "Observation of Single Electron Charging Effect in Nanocrystalline Silicon at Room Temparature Using Atomic Force Microscopy" Applied Physics Letters. 72(in press). (1998)

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      1997 Final Research Report Summary
  • [Publications] S.Suzuki, H.Tobisaka and S.Oda: ""","Electric Properties of Coplamar High-Tc Superconducting Field^Effect Devices" Japanese Journal of Applied Physics. 37(in press). (1998)

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  • [Publications] Z.Wang and S.Oda: "Atomic Layer-by-Layer Metal-Organic Chemical Vapor Deposition of SrTiO3 Films with a Very smooth Surface" Japanese Journal of Applied Physics. 37(in press). (1998)

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  • [Publications] S.V.Vyshenski, A.Ohata, Y.Kinugasa, Y.Hayafune, S.Hara, S-P.Lee, K.Nishiguchi, A.Dutta and S.Oda: "Active Probing of Single-Electron Effects in a Silicon Quantum Dot" Proceedings of The Fourth International Symposium on Quantum Effect Electronics. 45-50 (1997)

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  • [Publications] S.Oda and A.Dutta: "Fabrication and Characterization Silicon Quantum Dots" 3rd Int.Workshop on Quantum Functional Devices. 250-253 (1997)

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  • [Publications] S.Yamamoto, A.Kawaguchi and S.Oda: "Anomalous Current-Voltage Characteristics along the c-Axis in YBaCuO Thin Films Prepared by MOCVD and AFM Lithography" Physica C. 293. 244-248 (1997)

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  • [Publications] S.Suzuki and S.Oda: "Fabrication of Coplanar-type High-Tc Superconducting Field-Effect Devices" 5th Int.Workshop on High-Temparature Superconducting Electron Devices. 199-201 (1997)

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  • [Publications] S.Oda: "Fabrication of Silicon Quantum Dots by Pulsed-Gas Plasma Processes and Their Properties" Int.Symp.Nanostructuree;Phys.Technol.281 (1997)

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  • [Publications] A.Dutta, Y.Kinugasa, A.Itoh and S.Oda: "Fabrication and Electrical Properties of Silicon Nenocrystals" Silicon Nanoelectronics Workshop. 30-31 (1997)

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  • [Publications] S.Oda: "Single Electron Tunneling in Silicon Quantum Dots Prepared by Plasma Processing" Symp.Solid State Physics. 15-16 (1997)

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  • [Publications] S.Oda: "Growth Mechanism of YBCO thinfilms by MOVCD" Int.Workshop on Superconductivity. 39-42 (1997)

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  • [Publications] S.Oda: "Single Electron Devices Based on Silicon Quantum Dots" 20th Electrical Engineering Conference. 19-26 (1997)

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  • [Publications] S.Oda: "Preparation of Nanocrystalline Silicon Quantum Dot Structure by Pulsed Plasma Processes" Adv.Colloid and Interface Sci.31-47 (1997)

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      1997 Final Research Report Summary
  • [Publications] A.Dutta, M.Kimura, Y.Honda, M.Otobe, A,Itoh and S.Oda: "Fabrication and Electrical Charcteristics of Single Electron Tunneling Devices Based on Si Quantum Dots Prepared by Plasma Processing" Japanese Journal of Applied Physics. 36. 4038-4041 (1997)

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      1997 Final Research Report Summary
  • [Publications] T.Ifuku, M.Otobe, A.Itoh and S.Oda: "Fabrication of Nanocrystalline Silicon with Small Spread of Particle Size by Pulsed Gas Plasma" Japanese Journal of Applied Physics. 36. 4031-4034 (1997)

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  • [Publications] A.Itoh, T.Ifuku, M.Otobe and S.Oda: "Grain-Size Control of Nanocrystalline Silicon by Pulsed Gas Plasma Process" Materials Research Society Symposium Proceedings. 452. 749-754 (1997)

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  • [Publications] S.Suzuki and S.Oda: "Proposal of Coplanar-type High-Tc Superconducting Field-Effect Devices" Physica C. 282-287. 2495-2496 (1997)

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      1997 Final Research Report Summary
  • [Publications] Y.Kanemitsu, S.Okamoto, M.Otobe and S.Oda: "Photoluminescnce Mechanism in Surface-Oxidized Silicon Nanocrystals" Phys.Rev.B. 55. R7375-R7378 (1997)

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  • [Publications] 田部 道晴, 小田 俊理, 平本 俊郎, 中里 和郎, 雨宮 好仁: "単電子デバイス・回路の研究状況と今後の展望" 応用物理. 66. 99-108 (1997)

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  • [Publications] S.Yamamoto, A.Kawaguchi, K.Nagata, T.Hattori and S.Oda: "Atomiclayer-by-layer epitaxy of oxide superconductors by MOCVD" Applied Surface Science. 112. 30-37 (1997)

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  • [Publications] S.Yamamoto, T.Watanabe and S.Oda: "Junction Formation in YBaCuO Thin Films bu Scanning Probe" J.Low.Temp.Phys. 106. 423-432 (1997)

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  • [Publications] M.Otobe, J.Kawahara and S.Oda: "preferental Nucleation of Nanocrystalline Silicon along Microsteps" Japanese Journal of Applied Physics. 35/2. 1325-1328 (1996)

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  • [Publications] M.Otobe, T.Kanai, T.Ifuku, H.Yajima and S.Oda: "Nanocrystalline silicon formation in a SiH4 plasma cell" Journal of Non-Crystalline Solids. 198-200. 875-878 (1996)

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  • [Publications] S.Yamamoto, A.Kawaguchi and S.Oda: "Preparation of Thin Films of YBa2Cu30x with a Smooth Surface by Atomic Layer MOCVD" Mat.Sci.Eng.B. B41. 87-92 (1996)

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  • [Publications] S.Oda: "Fabrication of Silicon Quantum Dots by Plasma Processing" Cambridge-FED Workshop on Future Nano-scale Electron Devices. (1996)

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      1997 Final Research Report Summary
  • [Publications] S.Oda: "Atomiclayer-by-layer MOCVD of thinfilms of Oxide superconductors" Int.Workshop on Chemical Designing and Processing of High-Tc SuperconductorsII. (1996)

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      1997 Final Research Report Summary
  • [Publications] S.Oda, M.Kimura and M.Otobe: "Coulombstaircase Characterisitics in silicon quantum dots fabricated by plasma processing" Silicon Nanoelectronics Workshop. (1996)

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  • [Publications] S.Sugahara, E.Hasunuma,S.Imai and M.Matsumura: "Modeling of Si atomic-layer-epitaxy" Applied Surface Science. 107. 161-171 (1996)

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      1997 Final Research Report Summary
  • [Publications] E.Hasumuma, S.Sugahara, S.Hoshino, S.Imai, K.Ikeda and M.Matsumura: "Gas-Phase-Reactino-Controlled Atomic-Layer-Epitaxy of Silicon" J.Vac.Science and Tecnology. (in press). (1998)

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  • [Publications] Y.Uchida, K.Taguchi, T.Nagai and M.Matsumura: "Low-Temperature CVD of OH-Free and Low-k Organic-Silica Films" Proc.DUMIC. (in press). (1998)

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  • [Publications] K.Ikeda, S.Sugahara, Y.Uchida, T.Nagai and M.Matsumura: "Formation of An Atomically Abrupt Si/Ge Hetero-Interface" Japanese Journal of Applied Physics. (in press). (1998)

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  • [Publications] K.Usami, S.Hayashi, Y.Uchida and M.Matsumura: "Liquid-Phase Deposition of Silicon-Dioxide Films using TetraEthyl Orthosilicate" Japanese Journal of Applied Physics. (in press). (1998)

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  • [Publications] K.W.Choi and M.Matsumura: "Poly-Si/Poly-SiCx Hetero-Junction Thin-Film Transistors" IEEE Transactions on Electron Devices. (in press). (1997)

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  • [Publications] M.Matsumura and A.Saitoh: "Amorphous-Silicon Thin-Film Transistors Matchedto Ultra-Large Panels" Materials Research Society Symposium Proceedings. (in press). (1997)

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  • [Publications] K.Choi and M.Matsumura: "Crystallization and Evaluation of Non-Stoichiometric Silicn-Carbon Films for Hetero Thin-Film Transistors" Materials Research Society Symposium Proceedings. 452. 933-940 (1997)

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  • [Publications] A.Saitoh and M.Matsumura: "Excimer-Laser-Produced Amorphous-Silicon Vertical Thin-Film Transistors" Japanese Journal of Applied Physics. 36-6. L668-L669 (1997)

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  • [Publications] Y.Uchida,S.Takei and M.Matsumura: "Chemical Vapor Deposition of Hydrogen-Free Silicon-Dioxide Films" Japanese Journal of Applied Physics. 36-3. 1509-1512 (1997)

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  • [Publications] K.Ikeda, S.Imai and M.Matsumura: "Atomic Layer Etching of Germanium" Applied Surface Science. 112. 87-91 (1997)

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  • [Publications] Y.Uchida, S.Takei and M.Matsumura: "Stabilization of Hydrogen-Free CVD-SiO2 Films" Materials Research Society Symposium Proceedings. 446. 21-26 (1997)

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  • [Publications] Y.Uchida, S.Takei and M.Matsumura: "Step-Coverage Characteristics of Silicon-Dioxide Films Formed by A New Low-Temperature Chemical-Vapor-Deposition Method" Japanese Journal of Applied Physics. 36-8. L993-995 (1997)

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  • [Publications] R.Ishihara and M.Matsumura: "Excimer-Laser-Produced Single-Crystal Silicon Thin-Film Transistors" Japanese Journal of Applied Physics. 36-10. 6167-6170 (1997)

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  • [Publications] C.D.Kim and M.Matsumura: "Short-Channel Amorphous-Silicon Thin-Film Transistors" IEEE Transactions on Electron Devices. 43-12. 2172-2176 (1996)

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  • [Publications] S.Sugahara, T.Kitamura, S.Imai, Y.Uchida and M.Matsumura: "Ideal Monolayer Adsorption of Germanium on Si(100) Surface" Applied Surface Science. 107-11. 137-144 (1996)

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      1997 Final Research Report Summary
  • [Publications] S.Sugahara, E.Hasunuma, S.Imai and M.Matsumura: "Modeling of Silicon Atomic-Layer-Epitaxy" Applied Surface Science. 107-11. 161-171 (1996)

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      「研究成果報告書概要(和文)」より
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      1997 Final Research Report Summary
  • [Publications] C.D.Kim and M.Matsumura: "Excimer-Laser Crystallized Poly-Si TFT's with Transparent Gate" IEEE Transactions on Electron Devices. 43-4. 576-579 (1996)

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  • [Publications] K.Choi, Y.UChida and M.Matsumura: "Excimer-Laser Crystallization of Silicon-Carbon Films and Their Thin-Film Transistor Application" Japanese Journal of Applied Physics. 35-3. 1648-1651 (1996)

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  • [Publications] W.C.Yeh, R.Ishihara, S.Morishita and M.Mastumura: "Low-Temparature Chemical-Vapor-Deposition of Silicon-Nitride Film from Hexachloro-Disilane and Hydrazine" Japanese Journal of Applied Physics. 35-2. 1509-1512 (1996)

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  • [Publications] S.Sugahara, T.Kitamura, S.Imai and M.Matsumura: "Ideal monolayer adsorption of germanium on Si(100) surface" Applied Surface Science. 107. 137-144 (1996)

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  • [Publications] S.Sugahara, Y.Uchida, T.Kitamura, T.Nagai, M.Matsuyama, T.Hattori and M.Matsumura: "A proposed atomic-layer-deposition of germanium on Si surface" Japanese Journal of Applied Physics. 36-3. 1609-1613 (1997)

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  • [Publications] S.Sugahara and M.Matsumura: "Modeling of germanium atomic-layer-epitaxy" Applied Surface Science. 112. 176-186 (1997)

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  • [Publications] S.Morishita, S.Sugahara and M.Matsumura: "Atomic-layer chemical-vapor-deposition of silicon nitride" Applied Surface Science. 112. 198-204 (1997)

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  • [Publications] T.Haraguchi and O.Sugiura: "Low Temperature Flow of High-Water Containing Glasses Prepared by Chemical Vapor Deposition" Japanese Journal of Applied Physics. 35-10A. L1290-L1292 (1996)

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  • [Publications] 藤本 明、杉浦 修: "TICS/H2O系SiO2CVDの堆積モデル" 第50回半導体・集積回路シンポジウム講演論文集. 124-129 (1996)

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  • [Publications] T.Haraguchi and O.Sugiura: "Low Temperature Flow of High-Water Contatining Glasses Prepared by Chemical Vapor Deposition" Japanese Journal of Applied Physics. 35,10A. L1290-L1292 (1996)

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  • [Publications] A.Fujimoto and O.Sugiura: "A Deposition mechanism of SiO2 CVD using Tetra-isocyanatesilance and Water" Materials Research Society Symposium Proceedings. (1997)

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  • [Publications] D.F.Moore: "Recent trends in the fabrication of High-Tc films and devices" FED Journal 6. 47-56 (1996)

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  • [Publications] D.F.Moore, J.F.Walker and J.T.Whitney: "Focusedion beam processing for microscale fabrication" Microelectronic Engineering. 30. 517-522 (1996)

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  • [Publications] A.J.Pauza, W.E.Booji, D.F.Moore and Y.Yuan: "Electron beam damage Josephsonjunctions:the relation between beam damageprofile and electrical properties" Czechoslovak Journal of Physics. 46. 1325-6 (1996)

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  • [Publications] T.Kiriyama, N.Nakajima, S.Yoshimura, D.F.Moore, S.C.Burgess and N.Shibaike: "A conceptualdesign environment for micromechanisms page" Proceedings of the European Design and Test Conference,IEEE. 1066-1409/96. 448-453 (1996)

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  • [Publications] J.F.Walker, D.F.Moore and J.T.Whitney: "Focusedion beamprocessing for microscale fabrication" Microelectronic Engineering. 30. 517-522 (1996)

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  • [Publications] D.F.Moore, J.H.Daniel and J.F.Walker: "Nano-and micro-technology applications of focusedion beam processing" Microelectronic Journal. 28. 465-473 (1997)

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  • [Publications] S.C.Burgess, D.F.Moore, D.E.Newland and H.L.Klaubert: "A study of mechanical configuration optimisation in microsystems" Research Engineering Design. 9. 46-60 (1997)

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  • [Publications] D.F.Moore, A.J.Pauza, M.G.Blamire and W.E.Booij: "Focusedelectron beam irradiation junctions for device applications" R & D Association for Future Electron Devices FED(invited paper). 107-110 (1997)

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  • [Publications] W.E.Booij, A.J.Pauza, E.J.Tarte, D.F.Moore and M.G.Blamire: "Proximity coupling in high-Tc Josephson junctions produced by focused electron beam irradiation" Physical Review B. 55. 14600-14609 (1997)

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  • [Publications] D.F.Moore,A.J.Pauza,W.E.Booij and M.G.Blamire: "Alternative types of YBaCuO Josephson junctions" International Superconductive Electronics Conference ISEC'97,ext.abstr.(invited paper). J4. 11-13 (1997)

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  • [Publications] M.G.Blamire,W.E.Booij,A.J.Pauza,E.J.Tarte and D.F.Moore: "Improvements in the properties of electron-beam damage YBaCuO junctions" IEEE Trans.Applied Superconductivity. 7. 2856-2859 (1997)

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  • [Publications] D.F.Moore,A.J.Pauza,W.E.Booij,M.G.Blamire,K.Herrmann,F.Baudenbacher,T.Harnisch,J.F.Walker,N.Cade and D.Jedmzik: "Asymmetric YBaCuO interferometers and SQUIDs made with focused electron-beam irradiation junctions" IEEE Trans.Applied Superconductivity. 7. 2494-2497 (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] W.E.Booij,A.J.Pauza,D.F.Moore,E.J.Tarte and M.G.Blamire: "Electrodynamics of closely coupled YBaCuO junctions" IEEE Trans.Applied Superconductivity. 7. 3025-3028 (1997)

    • Description
      「研究成果報告書概要(和文)」より
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      1997 Final Research Report Summary
  • [Publications] R.M.Bostock,J.E.Townsend,R.Jones,R-J.E.Jansen and D.F.Moore: "Low cost integrated photonics systems" LEOS'97,San Francisco,IEEE Lasers and Electro-Optics Society(invited paper). 274-275 (1997)

    • Description
      「研究成果報告書概要(和文)」より
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      1997 Final Research Report Summary
  • [Publications] A.J.Pauza,W.E.Booij,K.Hermann,D.F.Moore,M.G.Blamire,D.A.Rudman and L.R.Vale: "Electron beam damaged high temperature Superconductor Josephson junctions" Journal Applied Physics. 82. 5612-5632 (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] S.Oda and D.F.Moore: "FED-Cambridge joint conference on future nanometrescale electron devices" FED Journal. 7. 53-55 (1996)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] J.H.Daniel,D.F.Moore,J.F.Walker and J.T.Whitney: "Focusedion beams microsystem fabrication" Microelectronic Engineering. 35. 431-434 (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] K.Herrman,A.J.Pauza,F.Baudenbacher,J.S.Santiso and D.F.Moore: "Electromigration effects in e-beam junctions" Physica C. 274. 306-316 (1997)

    • Description
      「研究成果報告書概要(和文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] A.J.Pauza,D.F.Moore: "Focused Electron Beam Irradiation(FEBI) Josephson junctions" Proceedings.HTS-WORKSHOP on Digital Applications,Josephson Junctions and 3-Terminal Devices. (1996)

    • Description
      「研究成果報告書概要(和文)」より
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      1997 Final Research Report Summary
  • [Publications] D.F.Moore,J.H.Daniel.S.C.Burgess,A.Nakayama,N.Shibaike and T.Kiriyama: "Silicon-on-insulator material for sensors and accelerometers" IEE Colloqium on Silicon Fabricatedlnertial Instruments,London IEE 1996. 227 9. 1-5 (1996)

    • Description
      「研究成果報告書概要(和文)」より
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      1997 Final Research Report Summary
  • [Publications] S F Yoon,R Ji,J Ahn and W I Milne: "Some Effects of Boron and Phosphorus Doping on the Properties of SiC:H Films Prepared Using ECRCVD" J.Vac.Sci.Tech.A15(1). (1997)

    • Description
      「研究成果報告書概要(和文)」より
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      1997 Final Research Report Summary
  • [Publications] M M M Bilek and W I Milne: "Silicon Deposited Using FCVA" Thin Solid Films. (1997)

    • Description
      「研究成果報告書概要(和文)」より
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      1997 Final Research Report Summary
  • [Publications] M M M Bilek and W I Milne: "Electronic Properties of FCVA prodeced a-Si:H" Electronics Letters. 32-21. 2016 (1996)

    • Description
      「研究成果報告書概要(和文)」より
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      1997 Final Research Report Summary
  • [Publications] M M M Bilek and W I Milne: "Filterd Cathodic Vaccum Arc Deposition of Thin Film Si"" Thin Solid Films. 299 (1996)

    • Description
      「研究成果報告書概要(和文)」より
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  • [Publications] F J Clough,E M Sankara,Narayanan,Y Chen,W Eccleston and W I Milne: "A Polysilicon Thin Film Transistor Incorporating a Semi-Insulating Field Plate For High Voltage Circuitry on Glass" Applied Physics Letters. 71-13. 1777 (1997)

    • Description
      「研究成果報告書概要(和文)」より
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      1997 Final Research Report Summary
  • [Publications] F Udrea,W I Milne and P Hemment: "New High Voltage Device Structures in SOl Based Technology" Proc of SOI Electro Chemical Society Meeting,Paris,Sept. 355 (1997)

    • Description
      「研究成果報告書概要(和文)」より
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      1997 Final Research Report Summary
  • [Publications] F Udrea,A Popescu and W I Milne: "A New LIGBT Structure Based on Partial Isolation SOI Technology" IEE Device Letters. 33-10. 907 (1997)

    • Description
      「研究成果報告書概要(和文)」より
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      1997 Final Research Report Summary
  • [Publications] J Evans and W I Milne: "A Simple Approximation of The Transconductance of a Power MOSFET" Electronics Letters. (in press). (1997)

    • Description
      「研究成果報告書概要(和文)」より
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      1997 Final Research Report Summary
  • [Publications] F J Clough,Y Chen and W I Milne: "A Comparison of Novel and Conventional High Voltage Polysilicon TFTs"" Proceedings of 16th International Euro Display. 21 (1996)

    • Description
      「研究成果報告書概要(和文)」より
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      1997 Final Research Report Summary
  • [Publications] J H Moon,S J Chung,W I Milne,M H Oh,J Jang: "Stability of Field Emission Current for hydrogenfree DLC Prepared by Layer-by-Layer Technique" Proceedings of IVMC 97,Kyongju,Korea. 455 (1997)

    • Description
      「研究成果報告書概要(和文)」より
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      1997 Final Research Report Summary
  • [Publications] R Ji,S F Yoon,J Ahn and W I Milne: "Some effects of P dopingin SiC:H Films prepared by ECR-CVD" Materials Science and Engineering B-Solid State Materials for Advanced Technology. 148-3. 215 (1997)

    • Description
      「研究成果報告書概要(和文)」より
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      1997 Final Research Report Summary
  • [Publications] K Gilkes,H S Sands,D N Batchelder,J Robertson and W I Milne: "Quantitative Studies of Tetrahedral Bonding in Amorphous Carbon Films Using UV Raman Spectroscopy" Materials Research Society Symposium Proceedings. (1997)

    • Description
      「研究成果報告書概要(和文)」より
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      1997 Final Research Report Summary
  • [Publications] A Ilie,M Rattier,N Conway,B Kleinsorge,J Robertson and W I Milne: "Photoconductivity of DLC" Materials Research Society Symposium Proceedings. (1997)

    • Description
      「研究成果報告書概要(和文)」より
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      1997 Final Research Report Summary
  • [Publications] W I Milne: "Field Emission from ta-C as a Function of Surface Treatment and Contact Material" Materials Research Society Symposium Proceedings. (1997)

    • Description
      「研究成果報告書概要(和文)」より
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      1997 Final Research Report Summary
  • [Publications] N Morrison,W I Milne,J Robertson,M Weiler,I Hutchings,L M Brown: "High Rate Deposition of ta-C:H Using an ECWR Plasma Source" Materials Research Society Symposium Proceedings. (1997)

    • Description
      「研究成果報告書概要(和文)」より
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  • [Publications] S J Chung,J H Moon,K C Park,M H Oh,W I Milne and J Jang: "Stability of Electron Emission Current in Hydrogen Free DLC Deposited by PECVD" J.Appl. Physics. 82-8. 4047 (1997)

    • Description
      「研究成果報告書概要(和文)」より
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      1997 Final Research Report Summary
  • [Publications] M M M Bilek,M Chhowalla and W I Milne: "Influence of Reactive Gas on Ion Energy Distributions in Filterd Cathodic Vacuum Arcs" Applied Physics Letters. 71-14. 2002 (1997)

    • Description
      「研究成果報告書概要(和文)」より
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      1997 Final Research Report Summary
  • [Publications] K Gilkes,H S Sands,D N Batchelder,J Robertson and W I Milne: "UV Raman Studies of ta-C" Diamond and Related Materials. (in press). (1997)

    • Description
      「研究成果報告書概要(和文)」より
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      1997 Final Research Report Summary
  • [Publications] N Conway,J Robertson and W I Milne: "Electric Properties and Doping of taC:H" Diamond and Related Materials. (in press). (1997)

    • Description
      「研究成果報告書概要(和文)」より
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      1997 Final Research Report Summary
  • [Publications] K J Clay,S P Speakman,N Morrison and W I Milne: "Materials Properties and Tribological Performance of re-PECVD DLC Coatings" Diamond and Related Materials. (in press). (1997)

    • Description
      「研究成果報告書概要(和文)」より
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      1997 Final Research Report Summary
  • [Publications] B S Satyanarayanan,A Hart,W I Milne and J Robertson: "Field Emission from ta-C" Applied Physics Letters. 71-10. 1430-1432 (1997)

    • Description
      「研究成果報告書概要(和文)」より
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      1997 Final Research Report Summary
  • [Publications] W I Milne,J Robertson,B S Satyanarayanan and A Hart: "Field Emission from ta-C" Materials Research Society Symposium Proceedings. (1997)

    • Description
      「研究成果報告書概要(和文)」より
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  • [Publications] V I Merkulov,J S Lannin,C H Munro,S A Asher,V S Veerasamy and W I Milne: "UV Studies of Tetrahedral Bondingin DLC" Phys Rev Lett. 78-25. 4869 (1997)

    • Description
      「研究成果報告書概要(和文)」より
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  • [Publications] Y J Lui,S F Yoon,J Ahn and W I Milne: "Effect of H Dilution on the Deposition of Carbon Rich a-SiC:H Produced from ECR" Mats Science and Engineering B-Solid State Materials. 3. 188 (1996)

    • Description
      「研究成果報告書概要(和文)」より
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  • [Publications] M.Otobe, J.Kawahara and S.Oda: ""Preferential Nucleation of Nanocrystalline Silicon along Microsteps"" Japanese Journal of Applied Physics. 35. 1325-1328 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
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      1997 Final Research Report Summary
  • [Publications] M.Otobe, T.Kanai, T.Ifuku, H.Yajima, and S.Oda: ""Nanocrystalline silicon formation in a SiH4 plasma cell"" Journal of Non-Crystalline Solids. 198-200. 875-878 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
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      1997 Final Research Report Summary
  • [Publications] S.Yamamoto, A.Kawaguchi and S.Oda: ""Preparation of Thin Films of YBa2Cu30x with a Smooth Surface by Atomic Layr MOCVD"" Materials Science and Engineering B. 41. 87-92 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
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  • [Publications] S.Oda: ""Preparation of Nanocrystalline Silicon Quantum Dot Structure by Pulsed Plasma Processes"" Adv.Colloid and Interface Sci.71-72. 31-47 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
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  • [Publications] S.Yamamoto, A.Kawaguchi, K.Nagata, T.Hattori and S.Oda: ""Atomic layr-by-layr epitaxy of oxide superconductors by MOCVD"" Applied Surface Science. 112. 30-37 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
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      1997 Final Research Report Summary
  • [Publications] S.Yamamoto, T.Watanabe and S.Oda: ""Junction Formation in YBaCuO Thin Films by Scanning Probe"" Journal of Low Temperature Physics. 106. 423-432 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
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  • [Publications] T.Ifuku, M.Otobe, A.Itoh and S.Oda: ""Fabrication of Nanocrystalline Silicon with Small Spread of Particle Size by Pulsed Gas Plasma"" Japanese Journal of Applied Physics. 36. 4031-4034 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
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      1997 Final Research Report Summary
  • [Publications] A.Dutta, M.Kimura, Y.Honda, M.Otobe, A.Itoh and S.Oda: ""Fabrication and Electrical Characteristics of Single Electron Tunneling Devices Based on Si Quantum Dots Prepared by Plasma Processing"" Japanese Journal of Applied Physics. 36. 4038-4041 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
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      1997 Final Research Report Summary
  • [Publications] A.Itoh, T.Ifuku, M.Otobe and S.Oda: ""Grain-Size Control of Nanocrystalline Silicon by Pulsed Gas Plasma Process"" Materials Research Society Symposium Proceedings. 452. 749-754 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
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      1997 Final Research Report Summary
  • [Publications] Y.Kanemitsu, S.Okamoto, M.Otobe and S.Oda: ""Photoluminesnce Mechanism in Surface-Oxidixed Silicon Nanocrystals"" Phys.Rev.B.55. R7375-R7378 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
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      1997 Final Research Report Summary
  • [Publications] S.Suzuki and S.Oda: ""Proposal of coplanar-type high-Tc superconducting field-effect devices"" Physica C. 282-287. 2495-2496 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
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      1997 Final Research Report Summary
  • [Publications] S.Yamamoto, A.Kawaguchi and S.Oda: ""Anomalous Current-Voltage Characteristics along the c-Axis in YBaCuO Thin Films Prepared by MOCVD and AFM Lithography"" Physica C. 293. 244-248 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
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      1997 Final Research Report Summary
  • [Publications] M.Otobe, H.Yajima and S.Oda: ""Observation of Single Electron Charging Effect in Nanocrystalline Silicon at Room Tempereture Using Atomic ForceMicroscopy"" Applied Physics Letters. 72 (in press). (1998)

    • Description
      「研究成果報告書概要(欧文)」より
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  • [Publications] S.Suzuki, H.Tobisaka and S.Oda: ""Electric Properties of Coplanar High-Tc Superconducting Field^Effect Devices"" Japanese Journal of Applied Physics. 37 (in press). (1998)

    • Description
      「研究成果報告書概要(欧文)」より
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      1997 Final Research Report Summary
  • [Publications] Z.Wang and S.Oda: ""Atomic Layr-by Layr Metal-Organic Chemical Vapor Deposition fo SrTiO3 Films with Very smooth Surface"" Japanese Journal of Applied Physics. 37, (in press). (1998)

    • Description
      「研究成果報告書概要(欧文)」より
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  • [Publications] E.Hasumura, S.Sugahara, S.Hoshino, S.Imai, K.Ikeda and M.Matsumura: ""Gas-Phase-Reaction-Controlled Atomic-Layr-Epitaxy of Silicon"" Journal of Vacuum Science and Technology. (in press). (1998)

    • Description
      「研究成果報告書概要(欧文)」より
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  • [Publications] Y.Uchida, K.Taguchi, T.Nagai and M.Matsumura: ""Low-Temperature CVD of OH-Free and Low-k Organic-Silica Films"" Proc.DUMIC. (1998)

    • Description
      「研究成果報告書概要(欧文)」より
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  • [Publications] K.Ikeda, S.Sugahara, Y.Uchida, T.Nagai and M.Matsumura: ""Formation of An Atomically Abrupt Si/Ge Hetero-Interface"" Japanese Journal of Applied Physics. (in press). (1998)

    • Description
      「研究成果報告書概要(欧文)」より
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  • [Publications] K.Usami, S.Hayashi, Y.Uchida and M.Natsumura: ""Liquid-Phase Deposition of Silicon-Dioxide Films using Tetra-Ethyl Orthosilicate"" Japanese Journal of Applied Physics. (in press). (1998)

    • Description
      「研究成果報告書概要(欧文)」より
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  • [Publications] K.W.Choi and M.Matsumura: ""Poly-Si/Poly-SiCx Hetero-Junction Thin-Film Transistors"" IEEE T-ED. (1998)

    • Description
      「研究成果報告書概要(欧文)」より
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  • [Publications] M.Matsumura and A.Saitoh: ""Amorphous-Silicon Thin-Film Transistors Matched to Ultra-Large Panels"" Materials Research Society Symposium Proceedings. (1997)

    • Description
      「研究成果報告書概要(欧文)」より
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      1997 Final Research Report Summary
  • [Publications] K.Choi and M.Matsumura: ""Crystallization and Evaluation of Non-Stoichiometric Silicon-Carbon Films for Hetero Thin-Film Transistors"" Materials Research Society Symposium Proceedings. 452. (1997)

    • Description
      「研究成果報告書概要(欧文)」より
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      1997 Final Research Report Summary
  • [Publications] A.Saitoh and M.Matsumura: ""Excimer-Laser-Produced Amorphous-Silicon Vertical Thin-Film Transistors"" Japanese Journal of Applied Physics. Vol.36, No.6. L668-L669 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
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      1997 Final Research Report Summary
  • [Publications] S.Sugahara, U.Uchida, T.Kimura, T.Nagai, M.Matsuyama, T.Hattori and M.Matsumura: ""A Proposed Atomic-Layr-Deposition of Germanium on Si Surface"" Japanese Journal of Applied Physics. Vol.36, No.3. 1609-1613 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
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  • [Publications] Y.Uchida, S.Takei and M.Matsumura: ""Chemical Vapor Deposition of Hydrogen-Free Silicon-Dioxide Films"" Japanese Journal of Applied Physics. Vol.36, No.3. 1509-1512 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
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      1997 Final Research Report Summary
  • [Publications] S.Sugahara and M.Matsumura: ""Modeling of Germanium Atomin-Layr-Epitaxy"" Applied Surface Science. Vol.112. 176-186 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
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  • [Publications] S.Morishita, S.Sugahara and M.Matsumura: ""Atomic-Layr Chemical-Vapor-Deposition of Silicon-Nitride"" Applied Surface Science. Vol.112. 198-204 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
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      1997 Final Research Report Summary
  • [Publications] K.Ikeda, S.Imai and M.Matsumura: "Atomic Layr Etching of Germanium" Applied Surface Science. Vol.112. 87-91 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
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      1997 Final Research Report Summary
  • [Publications] Y.Uchida, S.Takei and M.Matsumura: ""Stabilization of Hydrogen-Free CVD-SiO2 Films"" Materials Research Society Symposium Proceedings. Vol.446. 21-26 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
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      1997 Final Research Report Summary
  • [Publications] Y.Uchida, S.Takei and M.Matsumura: ""Step-Coverage Characteristics of Silicon-Dioxide Films Formed by A New Low-Temperature Chemical-Vapor-Deposition Method"" Japanese Journal of Applied Physics. Vol.36, No.8. L993-995 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
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      1997 Final Research Report Summary
  • [Publications] R.Ishihara and M.Matsumura: ""Excimer-laser-Produced Single-Crystal Silicon thin-Film Transistors"" Japanese Journal of Applied Physics. Vol.36, No.10. 6167-6170 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
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      1997 Final Research Report Summary
  • [Publications] C.D.Kim and M.Matsumura: ""Short-Channel Amorphous-Silicon Thin-Film Transistors"" IEEE ED. Vol.43, No.12. 2172-2176 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
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      1997 Final Research Report Summary
  • [Publications] S.Sugahara, T.Kitamura, S.Imai, Y,Uchida and M.Matsumura: ""Ideal Monolayr Adsorption of Germanium on Si (100) Surface"" Applied Surface Science. Vol.107, No.11. 137-144 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
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      1997 Final Research Report Summary
  • [Publications] S.Sugahara, E.Hasunuma, S.Imai and M.Matsumura: ""Modeling of Silicon Atomic-Layr-Epitaxy"" Applied Surface Science. Vol.107, No.11. 161-171 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
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      1997 Final Research Report Summary
  • [Publications] C.D.Kim and M.Matsumura: ""Excimer-Laser Crystallied Poly-Si TFT's with Transparent Gate"" IEEE Transactions on Electron Devices. Vol.43, No.4. 576-579 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
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      1997 Final Research Report Summary
  • [Publications] K.Choi, Y.Uchida and M.Matsumura: ""Excimer-Laser Crystallization of Silicon-Carbon Films and Their Thin-Film Transistor Application"" Japanese Journal of Applied Physics. Vol.35, No.3. 1648-1651 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
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      1997 Final Research Report Summary
  • [Publications] W.C.Yeh, R.Ishihara, S.Morishita and M.Matsumura: ""Low-Temperature Chemical-Vapor-Deposition of Silicon-Nitride Film from Hexachloro-Disilane and Hydrazine"" Japanese Journal of Applied Physics. Vol.35, No.2. 1509-1512 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
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  • [Publications] T.Haraguchi and O.Sugiura: ""Low Temperature Flow of High-Water Containing Glasses Prepared by Chemical Vapor Deposition, "" Japanese Journal of Applied Physics. vol.35, no.10A. L1290-L1292 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
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  • [Publications] J.F.Walker, D.F.Moore, and J.T.Whitney: ""Focused ion beam processing for microscale fabrication"" Microelectronic Engineering. 30. 517-522 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] S.Oda and D.F.Moore: ""FED-Cambridge joint conference on furture nanometer scale electron devices"" FED Journal. 7. 53-55 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] J.H.Daniel, D.F.Moore, J.F.Walker and J.T.Whitney: ""Focused ion beams in microsystem fabrication"" Microelectronic Engineering. 35. 431-434 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] K.Herrmann, A.J.Pauza, F.Baudenbacher, J.S.Santiso and D.F.Moore: ""Electromigration effects in e-beam junctions"" Physica C. 274. 309-316 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] D.F.Moore, J.H.Daniel and J.F.Walker: ""Nano-and micro-technology applications of focused ion beam processing"" Microelectronics Jounal. 28. 465-473 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] S.C.Burgess, D.F.Moore, D.E.Newland and H.L.Klaubert: ""A study of mechanical configuration optimisation in micro-systems"" Research in Engineering Design. 9. 46-60 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
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      1997 Final Research Report Summary
  • [Publications] D.F.Moore, A.J.Pauza, M.G.Blamire and W.E.Booij: ""Focused electron beam irradiation junctions for device applications"" R & D Association for Future Devices FED (invited paper). 107-110 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] W.E.Booij, A.J.Pauza, E.J.Tarte, D.F.Moore and M.G.Blamire: ""Proximity coupling in high-Tc Josephson junctions produced by focused electron beam iradiation"" Physical Review B. 55. 14600-14609 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
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      1997 Final Research Report Summary
  • [Publications] M.G.Blamire, W.E.Booij, A.J.Pauza, E.J.Tarte and D.F.Moore: ""Improvement in the properites of electron-beam damage YBaCuO junctions"" IEEE Trans.Applied Superconductivity. 7. 2856-2859 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
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      1997 Final Research Report Summary
  • [Publications] D.F.Moore, A.J.Pauza, W.E.Booij, M.G.Blamire, K.Hermann, F.Baudenbacher, T.Harnisch, J.F.Walker, N.Cade & D.Jedamzik: ""Asymmetric YBaCuO interferometers and SQUIDs made with focused electron-beam irradiation junctions"" IEEE Trans.Applied Superconductivity. 7. 2494-2497 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
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      1997 Final Research Report Summary
  • [Publications] W.E.Booij, A.J.Pauza, D.F.Moore, E.J.Tarte and M.G.Blamire: ""Electrodynamics of closely coupled YBaCuO junctions"" IEEE Trans.Applied Superconductivity. 7. 3025-3028 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] A.J.Pauza, W.E.Booij, K.Herrmann, D.F.Moore, M.G.Blamire, D.A.Rudman and L.R.Vale: ""Electron beam damaged high temperature superconductor Josephson junctions"" Journal of Applied Physics. 82. 5612-5632 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] S.F.Yoon, R.Ji, J.Ahn and W.I.Milne: ""Some Effects of Boron and Phosphorus Doping on the Properties of SiC : H Films Prepared Using ECRCVD"" Journal of Vacuum Science and Technology. A15(1). (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] M.M.M.Bilek and W.I.Milne: ""Silicon Deposited Using the FCVA"" Thin Solid Films. (in press). (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] M.M.M.Bilek and W.I.Milne: ""Electronic Properties of FCVA Produced a-Si : H"" Electronics Letters. Vol 32 no 21. 2016 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] M.M.M.Bilek and W.I.Milne: ""Filtered Cathodic Vacuum Arc Deposition of Thin Film Si"" Thin Solid Films. 299. (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] F.J.Clough, E.M.Sankara, Narayanan, Y.Chen, W.Eccleston and W.I.Milne: ""A Polysilicon Thin Film Transistor Incorporating a Semi-Insulating Field Plate For High Voltage Circuitry on Glass"" Applied Physics Letters. vol 71, no 13. 1777 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] F.Udrea, A.Popescu and W.I.Milne: ""A New LIGBT Structure Based on Partial Isolation SOI Technology"" IEE Device Letters. vol 33 no 10. 907 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] J.Evans and W.I.Milne: ""A Simple Approximation of The Transconductance of a Power MOSFET"" Electronics Letters. (in press). (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] R.Ji, S.F.Yoon, J.Ahn and M.I.Milne: ""Some effects of P doping in SiC : H Films prepared by ECR-CVD"" Materials Science and Engineering B-Solid Materials for Advanced Technology. vol48, no3. 215 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] J.Jang, S.J.Chung, J.H.Moon, K.C.Park, M.H.Oh, W.I.Milne: ""Stability of Electron Emission Current in Hydrogen Free DLC Deposited by PECVD"" Journal of Applied Physics. vol 82, no 8. 4047 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] M.M.M.Bilek, M.Chhowalla and W.I.Milne: ""Influence of Reactive Gas on Ion Energy Distribution in Filtered Cathodic Vacuum Arcs"" Applied Physics Letters. vol 71, no 14. 2002 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] K.Gilkes, H.S.Sands, D.N.Batchelder, J.Robertson and W.I.Milne: ""UV Raman Studies of ta-C"" Diamond and Related Materials. (in press). (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] N.Conway, J.Robertson and W.I.Milne: ""Electronic Properties and Doping of taC : H"" 1997 to be published in Diamond and Related Materials. (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] K.J.Clay, S.P.Speakman, N.Morrison and W.I.Milne: ""Materials Properties and Tribological Performance of re-PECVD DLC Coatings"" Diamond and Related Materials. (in press). (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] B.S.Satyanarayanan, A.Hart, W.I.Milne and J.Robertson: ""Field Emission from ta-C"" Applied Physics Letters. Vol 71, No 10. 1430-1432 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] V.I.Merkulov, J.S.Lannin, C.H.Munro, S.A.Asher, V.S.Veerasamy and W.I.Milne: ""UV Studies of Tetrahedral Bonding in DLC"" Phys Rev Lett.Vol78, No25. 4869 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] S.F.Yoon, A.Ji, J.Ahn, and W.I.Milne: ""The Effect of Microwave Power on the Deposition of Boron Doped a-Si-C : H Using ECR"" Thin Solid Films 288. No 1-2. 155-159 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] K.C.Park, J.H.Moon, S.J.Chung, J.Jang, M.H.Oh, and W.I.Milne: ""Deposition of n-type DLC Using the Layr by Layr Technique and its Electron Emission by Using"" Applied Physics Letters. 70(11). 1381 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] K.Gilkes, H.S.Sands, D.N.Batchelder, J.Robertson and W.I.Milne: ""Direct Observation of sp3 Bonding in ta-C using UV Raman Spectroscopy"" Applied Physics Letters. 70 (15). 1980 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] S.R.P.Silva, S.Xu, B.K.Tay, H.S.Tan, H.J.Scheibe, M.Chhowalla and W.I.Milne: ""The Structure and Morphology of ta-C Films"" Thin Solid Films. Vol 291. 317 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
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      1997 Final Research Report Summary
  • [Publications] S.Xu, D.Flynn, B.K.Tay, S.Prawer, K.W.Nugent, S.R.P.Silva, Y.Lifshitz and W.I.Milne: ""The Mechanical and Raman Properties of FCVA Prepared ta-C Films with a High sp3 Fraction"" Phil Mag B. Vol 76, No 3. 351-361 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
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      1997 Final Research Report Summary
  • [Publications] Manish, Chhowalla.J.Robertson, C.W.Chen, S.R.P.Silva, C.Davis, G.A.Amaratunga and M.I.Milne: ""Props of ta-C as a Function of Ion Energy, Growth Rae and Deposition Temperature"" Journal of Applied Physics. Vol81, No1. 139 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
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      1997 Final Research Report Summary
  • [Publications] M.M.M.Bilek, D.McKenzie, Y.Yin, M.Chhowalla and M.I.Milne: ""Interactions of the Directed Plasma from a Cathodic Arc with Electrodes and Magnetic Ducts"" IEEE Trans on Plasma Sci.Vol24, No5. 1291 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] J.S.Park and M.I.Milne: ""Etching of ta-C Films in an O2 Plasma"" Japanese Journal of Applied Physics, Part 2. Vol35, No12A. L1550 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
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      1997 Final Research Report Summary
  • [Publications] S.Xu, T.Y.Qiang, T.H.Siang, T.B.kang and M.I.Milne: ""Simulation of Plasma Flow in Toroidal Solenoid Filters"" IEEE Trans on Plasma Sci.Vol24, No6. 1309 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] S.Egret, M.P.Smith, J.Robertson, W.I.Milne and F.J.Clough: ""DLC MSMs for AMLCD Displays"" Diamond and Related Materials. Vol6, No5-7. 879 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] G.Fusco, A.Tagliaferro, J.Robertson and M.I.Milne: ""Paramagnetic Centers in ta-C"" Diamond and Related Materials. Vol16, No5-7. 783 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] S.F.Yoon, R.Ji, J.Ahn, and W.I.Milne: ""A Raman and Photoconductivity Analysis of Boron Doped a-SiC : H Films Deposited Using the ECR Plasma CVD Method"" J.of Mats Science. Vol32, No5. (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] S.F.Yoon, R.Ji, J.Ahn, and W.I.Milne: ""The Effects of Process Pressure and Microwave Power on the Properties of Boron Doped a-SiC : H Films Prepared Using an ECR Technique"" Diamond and Related Materials 5. No 11. 115 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] S.R.P.Silva, S.Xu, B.K.Tay, H.S.Tan and W.I.Milne: ""Nanocrystallites in ta-C Films"" Applied Physics Letters. 69(4). 22 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] K.C.Park, J.H.Moon, S.J.Chung, J.H.Jung, B.K.Ju, M.H.Oh, W.I.Milne, M.K.Han and J.Jang: ""Field Emission Properties of N Doped ta-C Films"" Journal of Vacuum Science and Technology B. Vol15, No2. 431 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] K.C.Park, J.H.Moon, S.K.Chung, M.H.Oh, W.I.Milne, and J.Jang: ""Relationship Between Field Emission Characteristics and Hydrogen Content in DLC Deposited Using a Layr-by-Layr Technique"" Journal of Vacuum Science and Technology B. Vol15, No2. 428 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] F.J.Clough, W.I.Milne, B.Kleinsorge, J.Robertson, G.A.J.Amaratunga and B.N.Roy: ""Tetrahedrally Bonded Amorphous Carbon (ta-C) Thin Film Transistors"" Electronics Letters. 498 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] S.Xu, B.K.Tay, H.S.Tan, L.Zhong, Y.Tu, S.R.P.Silva and W.I.Milne: ""Properties of Carbon Ion Deposited Tetrahedral Amorphous Carbon Films as a Function of Ion Energy"" Journal of Applied Physics. Vol79, No9. 723 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] S.R.P.Silva, S.Xu, B.K.Tay, H.S.Tan, H.J.Scheibe, M.Chhowalla and W.I.Milne: ""The Structure of ta-C"" Thin Solid Films. 290-291. 317 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] Y.J.Lui, S.F.Yoon, Ahn and W.I.Milne: ""Effect of H Dilution on Deposition of C Rich a-siC : H Films by ECR"" Journal Mat Sci Part B Solid State Mats for Adv.tech.Vol 39, No 3. 188 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
    • Related Report
      1997 Final Research Report Summary
  • [Publications] S.F.Yoon, J.Rong, J.Ah and W.I.Milne: ""The Effecdt of Microwave Power on the Deposition of Boron Doped a-SiC : H Films"" Thin Solid Films. Vol No 1-2. 155 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
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      1997 Final Research Report Summary
  • [Publications] Y.S.Fatt, S.Miyajima and W.I.Milne: ""Photo-CVD Produced Amorophous Silicon Carbide"" Materials Science and Engineering B. (in press). (1996)

    • Description
      「研究成果報告書概要(欧文)」より
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      1997 Final Research Report Summary
  • [Publications] J.Robertson and W.I.Milne: ""Band Model for Emission from Diamond Like Carbon"" Journal of Non Crystalline Solids. (in press). (1998)

    • Description
      「研究成果報告書概要(欧文)」より
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      1997 Final Research Report Summary
  • [Publications] W.I.Milne and J.Robertson: ""Field Emission in DLC"" J.of the Korean Physical Society. Vol30, No Ssp. S182 (1997)

    • Description
      「研究成果報告書概要(欧文)」より
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      1997 Final Research Report Summary
  • [Publications] M.A.kastner: ""Mesoscopic Physics with Artificial Atoms"" Comments Cond.Mat.Phys.17. 349 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
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      1997 Final Research Report Summary
  • [Publications] O.Klein, D.Goldhaber-Gordon, C.de C.Chamon, and M.A.Kastner: ""Magnetic-field Dependence of the Level Spacing of a Small Electron Droplet"" Physics Review B. 53. R4221 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
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      1997 Final Research Report Summary
  • [Publications] F.Nihey, M.A.Kastner, and K.Nakanura: ""Insulator to Quantum Hall Liquid Transition in an Antidot Lattice"" Physics Review. (in press).

    • Description
      「研究成果報告書概要(欧文)」より
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      1997 Final Research Report Summary
  • [Publications] B.O.Wells, R.J.Birgeneau, F.C.Chou, Y.Endoh, D.C.Johnston, M.A.Kastner, Y.S.Lee, G.Shirane, J.M.Tranquada and K.Yamada, Z.: ""Intercalation and Staging Behavior in Super-Oxygenated La2 CuO4+d"" Phys.B. 100. 535 (1996)

    • Description
      「研究成果報告書概要(欧文)」より
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      1997 Final Research Report Summary
  • [Publications] M.A.Kastner: ""Artificial Atoms : Their Physics and Potential Application"" FED Journal. 7. 3 (1996)

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      「研究成果報告書概要(欧文)」より
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      1997 Final Research Report Summary
  • [Publications] M.Otode, H.Yajima and S.Oda: "Observation of Single Electron Charging Effectin Nanocrystalline Silicon at Room Temperature Using Atomic Force Microscopy" Applied Physics Letters. 72(in press). (1998)

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      1997 Annual Research Report
  • [Publications] S.Suzuki, H.Tobisaka and S.Oda: "Electric Properties of Coplanar High-Tc Superconducting Field Effect Devices" Japanese Journal of Applied Physics. 37(in press). (1998)

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      1997 Annual Research Report
  • [Publications] Z.Wang and S.Oda: "Atomic Layer-by-Layer Metal-Organic Chemical Vapor Deposition of SrTiO3 Films with a Very smooth Surface" Japanese Journal of Applied Physics. 37(in press). (1998)

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      1997 Annual Research Report
  • [Publications] S.V.Vyshenski, A.Ohata, S.Oda: "Active Probing of Single-Electron Effects in a Silicon Quantum Dot" Proceedings of The Fourth International Symposium on Quantum Effect Electronics. 45-50 (1997)

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      1997 Annual Research Report
  • [Publications] S.Oda and A.Dutta: "Fabrication and Characterization of Silicon Quantum Dots" 3rd Int.Workshop on Quantum Functional Devices. 250-253 (1997)

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      1997 Annual Research Report
  • [Publications] S.Yamamoto, A.Kawaguchi and S.Oda: "Anomalous Current-Voltage Characterisitics along the c-Axis in YBaCuO Thin Films Prepared by MOCVD and AFM Lithography" Physica C. 293. 244-248 (1997)

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      1997 Annual Research Report
  • [Publications] S.Suzuki and S.Oda: "Fabrication of Coplanar-type High-Tc Superconducting Field-Effect Devices" 5th Int.Workshop on High-Temperature Superconducting Electron Devices. 199-201 (1997)

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      1997 Annual Research Report
  • [Publications] S.Oda: "Fabrication of Silicon Quantum Dots by Pulsed-Gas Plasma Processes and Their Properties" Int.Symp.Nanostructures;Phys.Technol.281 (1997)

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      1997 Annual Research Report
  • [Publications] A.Dutta, Y.Kinugasa, A.Itoh and S.Oda: "Fabrication and Electrical Properties of Silicon Nanocrystals" Silicon Nanoelectronics Workshop. 30-31 (1997)

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      1997 Annual Research Report
  • [Publications] S.Oda: "Single Electron Tunneling in Silicon Quantum Dots Prepared by Plasma Processing" Symp.Solid State Physics. 15-16 (1997)

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      1997 Annual Research Report
  • [Publications] S.Oda: "Growth Mechanism of YBCO thinfilms by MOCVD" Int.Workshop on Superconductivity. 39-42 (1997)

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      1997 Annual Research Report
  • [Publications] S.Oda: "Single Electron Devices Based on Silicon Quantum Dots" 20th Electrical Engineering Conference. 19-26 (1997)

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      1997 Annual Research Report
  • [Publications] S.Oda: "Preparation of Nanocrystalline Silicon Quantum Dot Structure by Pulsed Plasma Processes" Adv.Colloid and Interface Sci.31-47 (1997)

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      1997 Annual Research Report
  • [Publications] A.Dutta, M.Kimura, Y.Honda, M.Otobe A.Itoh and S.Oda: "Fabrication and Electrical Characteristics of Single Electron Tunneling Devices Based on Si Quantum Dots Prepared by Plasma Processing" Japanese Journal of Applied Physics. 36. 4038-4041 (1997)

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      1997 Annual Research Report
  • [Publications] T.Ifuku, M.Otobe, A.Itoh and S.Oda: "Fabrication of Nanocrystalline Silicon with Small Spread of Particle Size by Pulsed Gas Plasma" Japanese Journal of Applied Physics. 36. 4031-4034 (1997)

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      1997 Annual Research Report
  • [Publications] A.Itoh, T.Ifuku, M.Otobe and S.Oda: "Grain-Size Control of Nanocrystalline Silicon by Pulsed Gas Plasma Process" Materials Research Society Symposium Proceedings. 452. 749-754 (1997)

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      1997 Annual Research Report
  • [Publications] S.Suzuki and S.Oda: "Proposal of Coplanar-type High-Tc Superconducting Field-Effect Devices" Physica C. 282-287. 2495-2496 (1997)

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      1997 Annual Research Report
  • [Publications] Y.Kanemitsu, S.Okamoto, M.Otobe and S.Oda: "Photoluminescnce Mechanism in Surface-Oxdized Silicon Nanocrystals" Phys.Rev.B. 55. R7375-R7378 (1997)

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      1997 Annual Research Report
  • [Publications] S.Yamamoto, A.Kawaguchi, K.Nagata, T.Hattori and S.Oda: "Atomic layer-by-layer epitaxy of oxide superconductors by MOCVD" Applied Surface Science. 112. 30-37 (1997)

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      1997 Annual Research Report
  • [Publications] S.Yamamoto, T.Watanabe and S.Oda: "Junction Formation in YBaCuO Thin Films bu Scanning Probe" J.Low.Temp.Phys. 106. 423-432 (1997)

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      1997 Annual Research Report
  • [Publications] E.Hasumuma, S.Sugahara, S.Hoshino, S.Imai, K.Ikeda and M.Matsumura: "Gas-Phase-Reaction-Controlled Atomic-Layer-Epitaxy of Silicon" J.Vac.Science and Thecnology. (in press). (1998)

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      1997 Annual Research Report
  • [Publications] Y.Uchida, K.Taguchi, T.Nagai and M.Matsumura: "Low-Temperature CVD of OH-Free and Low-k Organic-Sillica Films" Proc.DUMIC. (in press). (1998)

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      1997 Annual Research Report
  • [Publications] K.Ikeda, S.Sugahara, Y.Uchida, T.Nagai and M.Matsumura: "Formation of An Atomically Abrupt Si/Ge Hetero-Interface" Japanese Journal of Applied Physics. (in press). (1998)

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      1997 Annual Research Report
  • [Publications] K.Usami, S.Hayashi, Y.Uchida and M.Matsumura: "Liquid-Phase Deposition of Silicon-Dioxide Films using Tetra-Ethyl Orthosilicate" Japanese Journal of Applied Physics. (in press). (1998)

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      1997 Annual Research Report
  • [Publications] K.W.Choi and M.Matsumura: "Poly-Si/Poly-SiCx Hetero-Junction Thin-Film Transistors" IEEE Transactions on Electron Devices. (in press). (1998)

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      1997 Annual Research Report
  • [Publications] M.Matsumura and A.Saitoh: "Amorphous-Silicon Thin-Film Transistors Matched to Ultra-Large Panels" Materials Research Society Symposium Proceedings. (in press). (1997)

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      1997 Annual Research Report
  • [Publications] K.Choi and M.Matsumura: "Crystallization and Evaluation of Non-Stoichiometric Silicon-Carbon Films for Hetero Thin-Film Transistors" Materials Research Society Symposium Proceedings. 452. 933-940 (1997)

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      1997 Annual Research Report
  • [Publications] A.Saitoh and M.Matsumura: "Excimer-Laser-Produced Amorphous-Silicon Vertical Thin-Film Transistors" Japanese Journal of Applied Physics. 36-6. L668-L669 (1997)

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      1997 Annual Research Report
  • [Publications] Y.Uchida, S.Takei and M.Matsumura: "Chemical Vapor Deposition of Hydrogen-Free Silicon-Dioxide Films" Japanese Journal of Applied Physics. 36-3. 1509-1512 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] K.Ikeda, S.Imai and M.Matsumura: "Atomic Layer Etching of Germanium" Applied Surface Science. 112. 87-91 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] Y.Uchida, S.Takei and M.Matsumura: "Stabilization of Hydrogen-Free CVD-SiO2 Films" Materials Research Society Symposium Proceedings. 446. 21-26 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] Y.Uchida, S.Takei and M.Matsumura: "Step-Coverage Characteristics of Silicon-Dioxide Films Formed by A New Low-Temperature Chemical-Vapor-Deposition Method" Japanese Journal of Applied Physics. 36-8. L993-995 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] R.Ishihara and M.Matsumura: "Excimer-Laser-Produced Single-Crystal Silicon Thin-Film Transistors" Japanese Journal of Applied Physics. 36-10. 6167-6170 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] S.Sugahara, Y.Uchida, T.Kitamura, T.Nagai, M.Matsuyama, T.Hattori and M.Matsumura: "A proposedatomic-layer-deposition of germaniumon Si surface" Japanese Journal of Applied Physics. 36-3. 1609-1613 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] S.Sugahara and M.Matsumura: "Modeling of germaniumatomic-layer-epitaxy" Applied Surface Science. 112. 176-186 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] S.Morishita, S.Sugahara and M.Matsumura: "Atomic-layer chemical-vapor-deposition of silicon nitride" Applied Surface Science. 112. 198-204 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] A.Fujimoto and O.Sugiura: "A Deposition mechanism of SiO2 CVD using Tetra-isocyanate-silane and Water" Materials Research Society Symposium Proceedings. (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] D.F.Moore, J.H.Daniel and J.F.Walker: "Nano-and micro-technology applications of focusedion beam processing" Microelectronics Journal. 28. 465-473 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] S.C.Burgess, D.F.Moore, D.E.Newland and H.L.Klaubert: "A study of mechanical configuration optimisation in micro-systems" Research in Engineering Design. 9. 46-60 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] D.F.Moore, A.J.Pauza, M.G.Blamire and W.E.Booij: "Focused electron besmirradiation junctions for device applications" R & D Association for Future Electron Devices FED(invited paper). 107-110 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] W.E・Booij, A.J.Pauza, E.J.Tarte, D.F.Moore and M.G.Blamire: "Proximity coupling in High-TC Josephsonjuctions produced by focused electron beamirradiation" Physical Review B. 55. 14600-14609 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] D.F.Moore, A.J.Pauza, W.E.Booij and M.G.Blamire: "Alternative types of YBaCuO Josephson junctions" International Superconductive Electronics Conference ISEC′97,ext.abstr.(invited paper). J4. 11-13 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] M.G/Blamire, W.E.Booij, A.J.Pauza, E.J.Tarte and D.F.Moore: "Improvements in the properties of electron-beam damage YBaCuO junctions" IEEE Trans.Applied Superconductivity. 7. 2856-2859 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] D.F.Moore, A.J.Pauza, W.E.Booij, M.G.Blamire, K.Herrmann, F.Baudenbacher, T.Harnisch, J.F.Walker, N.Cade and D.Jedamzik: "Asymmetric YBaCuO interfer ometers and SQUIDs made with focused electron-beamirradiation junctions" IEEE Trans.Applied Superconductivity. 7. 2494-2497 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] W.E.Booij, A.J.Pauza, D.F.Moore, E.J.Tarte and M.G.Blamire: "Electrodynamics of closely coupled YBaCuO junctions" IEEE Trans.Applied Superconductivity. 7. 3025-3028 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] R.M.Bostock, J.E.Townsend, R.Jones, R-J.E.Jansen and D.F.Moore: "Low cost integrated photonic systems" LEOS′97,San Francisco,IEEE Lasers and Electro-Optics Society(invited Paper). 274-275 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] A.J.Pauza, W.E.Booij, K.Herrmann, D・F.Moore, M.G.Blamire, D.A.Rudman and L.R.Vale: "Electron beam damaged high temperature superconducter josephson junctions" Journal Applied Physics. 82. 5612-5632 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] J.H.Daniel, D.F.Moore, J.F.Walker and J.T.Whitney: "Focusedion beamsin microsystem fabrication" Microelectronic Engineering. 35. 431-434 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] K.Herrmann, A.J.Pauza, F.Baudenbacher, J.S.Santiso and D.F.Moore: "Electromigration effects in e-beam junctions" Physica C. 274. 306-316 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] S F Yoon, R Ji, J Ahn and W I Milne: "Some Effects of Boron and Phosphorus Doping on the Properties of SiC:Films Prepared Using ECRCVD" J.Vac.Sci.Tech.A15(1). (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] M M M Bilek and W I Milne: "Silicon Deposited Using the FCVA" Thin Solid Films. (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] F J Clough, E M Sankara Narayanan, Y Chen, W Eccleston and W I Milne: "A Polysilicon Thin Film Transistor Incorporating a Semi-Insulating Field Plate For High Voltage Circuitry on Glass" Applied Physics Letters. 71-13. 1777 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] F Udrea, W I Milne and P Hemment: "New High Voltage Device Structures in SOI Based Technology" Proc of SOI Electro Chemical Society Meeting,Paris,Sept. 355 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] F Udrea, APopescu and W I Milne: "A New LIGBT Structure Based on Partial Isolation SOI Technology" IEE Device Letters. 33-10. 907 (1997)

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      1997 Annual Research Report
  • [Publications] J Evans and W I Milne: "A Simple approximation of The Transconductance of a Power MOSFET" Electronics Letters. in press (1997)

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      1997 Annual Research Report
  • [Publications] J H Moon, S J Chung, W I Milne, M H Oh, J Jang: "Stability of Field Emission Current for hydrogen free DLC Prepared by Layer-by-Layer Technique" Proceedings of IVMC ‘97,Kyongju,Korea. 455 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] R Ji, S F Yoon, J Ahn and W I Milne: "Some effects of P doping in SiC:Films prepared by ECR-CVD" Materials Science and Engineering B-Solid State Materials for Advanced Technology. 148-3. 215 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] K Gilkes, H S Sands, D N Batchelder, J Robertson and W I Milne: "Quantitative Studies of Tetrahedral Bonding in Amorphous Carbon Films Using UV Raman Spectroscopy" Materials Research Society Symposium Proceedings. (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] Alie, M Rattier, N Conway, B Kleinsorge, J Robertsonand W I Milne: "Photoconductivity of DLC" Materials Research Society Symposium Proceedings. (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] W I Milne: "Field Emission fron ta-C as a Function of Surface Treatment and Contact Material" Materials Research Society Symposium Proceedings. (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] N Morrison, W I Milne, J Robertson, M Weiler, I Hutchings, L M Brown: "High Rate Deposition of ta-C:H Using an ECWR Plasma Source" Materials Research Society Symposium Proceedings. (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] S J Chung, J H Moon, K C Park, M H Oh, W I Milne and J Jang: "Stability of Electron Emission Current in Hydrogen Free DLC Deposited by PECVD" J.Appl.Physics. 82-8. 4047 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] M M M Bilek, M Chhowalla and W I Milne: "Influence of Researtive Gas on lon Energy Distributions in Filtered Cathodic Vacuum Arcs" Applied Physics Letters. 71-14. 2002 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] K Gilkes, H S Sands, D N Batchelder, J Robertson and W I Milne: "UV Raman Studies of ta-C" Diamond and Related Materials. (in press). (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] N Conway, J Robertson and W I Milne: "Electronic Properties and Doping of taC:H" Diamond and Related Materials. (in press). (1997)

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      1997 Annual Research Report
  • [Publications] K J Clay, S P Speakman, N Morrison and W I Milne: "Materials Properties and Tribological Performance of re-PECVD DLC Coatings" Diamond and Related Materials. (in press). (1997)

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      1997 Annual Research Report
  • [Publications] B S Satyanarayanan, A Hart, W I Milne and J Robertson: "Field Emission from ta-C" Applied Physics Letters. 71-10. 1430-1432 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] W I Milne, J Robertson, B S Satyanarayan and A Hart: "Field Emission from ta-C" Materials Research Society Symposium Proceedings. (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] VI Merkulov, J S Lannin, C H Munro, S A Asher, V S Veerasamy and W I Milne: "UV Studies of Tetrahedral Bonding in DLC" Phys Rev Lett. 78-25. 4869 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] K C Park, J H Moon, S J Chung, J Jang, M H Oh, and W I Milne: "Deposition of n-type DLC Using the Layer by Layer Technique and its Electron Emission by Using" Applied Physics Letters. 70-11. 1381 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] K Gilkes, H S Sands, D N Batchelder, J Robertson and W I Milne: "Direct Observation of sp3 Bonding in ta-C using UV Raman Spectroscopy" Applied Physics Letters. 70-15. 1980 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] S R P Silva, S Xu, B K Tay, H S Tan, H J Scheibe, M Chhowalla and W I Milne: "The Structure and Morphology of ta-C Films" Thin Solid Folms. 291. 317 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] S Xu, D Flynn, B K Tay, S Prawer, K W Nugent, S R P Siva, Y Lifshitz and W I Milne: "The Mechanical and Raman Properties of FCVA Prepared ta-C Films with a High sp3 Fraction" Phil Mag B. 76-3. 351-361 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] G Fusco, A Tagliaferro, J Robertson and W I Milne: "Paramagnetic Centres in ta-C" Diamond and Related Materials. 16No5-7. 783 et seq. (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] S F Yoon, R Ji, J Ahn, and W I Milne: "A Raman and Photoconductivity Analysis of Boron Dopeda-SiC:H Films Deposited Using the ECR Plasma CVD Method" J.of Mats Science. 32-5. (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] K C Parke, J H Moon, S K Chung, M H Oh, W I Milne and J Jang: "Relationship Between Field Emission Characteristics and Hydrogen Contentin DLC Deposited Using a Layer-by-Layer Technique" Journal of Vacuum Science and Tech.B. 15-2. 428 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] J Robertson and W I Milne: "Band Model for Emission from Diamond Like Carbon" J.Non Xtalline Solids. (in press). (1998)

    • Related Report
      1997 Annual Research Report
  • [Publications] W I Milne and J Robertson: "Field Emission in DLC" J.of the Korean Physical Society. 30,No Ssp. S182 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] Manish, Chhowalla, J Robertson, C W Chen, S R P Silva, C Davis, G A J Amaratunga and W I Milne: "Props of ts-C as a Function of lon Energy,Growth Rae and Deposition Temperature" Journal of Applied Physics. 81-1. 139 (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] S Egret, M P Smith, J Robertson, W I Milne and F J Clough: "DLC MSMs for AMLCD Displays" Diamond and Related Materials. 6,No5-7. 879 et seq. (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] M.Froggatt, W.I.Milne, J.Robertson and M.J.Powell: "Microcrystalline TFTs" Materials Research Society Symposium Proceedings. (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] Y.Chen, F.J.Clough, S.Ekkanath Madathil and W.I.Milne: "High voltage polysilicon TFTs" Materials Research Society Symposium Proceedings. (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] Y.Chen, F.J.Clough, S.Ekkanath Madathil, W.I.Milne and W.Eccleston: "Novel polysilicon high voltage transistor" J.Electrochem Soc. (in press). (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] W.I.Milne and J.Robertson: "Field emission from ta-C" Materials Research Society Symposium Proceedings. (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] J.Robertson and W.I.Milne: "Band model for emission from diamond and diamond like carbon" Materials Research Society Symposium Proceedings. (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] K.C.Park, J.H.Moon, S.J.Chung, M.H.Oh, W.I.Milne and J.Jang: "Electron emission from DLC deposited by using a layer by layer technique" Applied Physics Letters. (in press). (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] K.Gilkes, H.S.Sands, D.N.Batchelder, J.Robertson and W.I.Milne: "Direct observation of sp3 bonding ta-C using UV raman spectroscopy" Applied Physics Letters. (in press). (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] S.Xu, D.Flynn, B.K.Tay, S.Prawer, K.W・Nugent, S.R.P.Silva, Y.Lifshitz and W.I.Milne: "The mechanical and raman properties of FCV Aprepared ta-C Films with a high sp3 fraction" Phil.Mag B. (in press). (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] K.C/Park, J.H.Moon, S.J.Chung, J.H.Jung, B.K.Ju, M.H.Oh, W.I.Milne, M.K.Han and J.Jang: "Field emission properties of N doped ta-C films" Jounal of Vacuum Science and Technology. (in press). (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] K.C.Park, J.H.Moon, S.K.Chung, M.H.Oh, W.I.Milne and J.Jang: "Relationship between field emission characteristics and hydrogen contentin DLC deposited using a layer-by-layer technique" Jounal of Vacuum Science and Technology. (in press). (1997)

    • Related Report
      1997 Annual Research Report
  • [Publications] S.Oda: "Preparation of Nanocrystalline Silicon Quantum Dot Structure by Pulsed Plasma Processes" Adv.Colloid and Interface Sci.in press. (1997)

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      1996 Annual Research Report
  • [Publications] A.Dutta,M.Kimura,Y.Honda,M.Otobe A.Itoh and S.Oda: "Fabrication and Electrical Characteristics of Single Electron Tunneling Devices Based on Si Quantum Dots Prepared by Plasma Processing" Japanese Journal of Applied Physics. in press. (1997)

    • Related Report
      1996 Annual Research Report
  • [Publications] T.Ifuku,M.Otobe,A.Itoh and S.Oda: "Fabrication of Nanocrystalline Silicon with Small Spread of Praticle Size by Pulsed Gas Plasma" Japanese Journal of Applied Physics. in press. (1997)

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      1996 Annual Research Report
  • [Publications] A.Itoh,T.Ifuku,M.Otobe and S.Oda: "Grain-Size Contorol of Nanocrystalline Silicon by Pulsed Gas Plasma Process" Materials Research Society Symposium Proceedings. in press. (1997)

    • Related Report
      1996 Annual Research Report
  • [Publications] S.Suzuki and S.Oda: "Proposal of coplanar-type high-Tc superconducting field-effect devices" Physica C. in press. (1997)

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      1996 Annual Research Report
  • [Publications] Y.Kanemitsu,S.Okamoto,M.Otobe and S.Oda: "Photoluminescnce Mechanism in Surface-Oxidized Silicon Nanocrystals" Phys.Rev.B. in press. (1997)

    • Related Report
      1996 Annual Research Report
  • [Publications] 田部道春、小田俊理、平本俊郎、中里和郎、雨宮好仁: "単電子デバイス・回路の研究状況と今後の展望" 応用物理. 66. 99-108 (1997)

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      1996 Annual Research Report
  • [Publications] S.Yamamoto,A.Kawaguchi and S.Oda: "Anomalous Current-Voltage Characteristics along the c-Axis in YBaCuO Thin Films Prepared by MOCVD and AFM Lithography" Int.Symp.Intrinsic Josephson Effect and THz Plasma Oscillations in High Tc Superconductors. (1997)

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      1996 Annual Research Report
  • [Publications] S.Yamamoto,A.Kawaguchi,K.Nagata,T.Hattori and S.Oda: "Atomic layer-by-layer epitaxy ofoxide superconductors by MOCVD" Applied Surface Science. in press. (1996)

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      1996 Annual Research Report
  • [Publications] S.Yamamoto,T.Watanabe and S.Oda: "Junction Formation in YBaCuO Thin Films bu Scanning probe" J.Low.Temp.Phys. in press. (1996)

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      1996 Annual Research Report
  • [Publications] M.Otobe,J.Kawahara and S.Oda: "Preferential Nucleation of Nanocrystalline Silicon along Microsteps" Japanese Journal of Applied Physics. 35/2. 1325-1328 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] M.Otobe,T.Kanai,T.Ifuku,H.Yajima and S.Oda: "Nanocrystalline silicon formation in a SiH4 Plasma cell" Journal of Non-Crystalline Solids. 198-200. 875-878 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] S.Yamamoto,A.Kawaguchi and S.Oda: "Preparation of Thin Films of YBa2Cu3Ox with a Smooth Surface by Atomic Layer MOCVD" Mat.Sci.Eng.B. B41. 87-92 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] S.Oda: "Fabrication of Silicon Quantum Dots by Plasma Processing" Cambridge-FED Workshop on Future Nano-scale Electron Devices. (1996)

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      1996 Annual Research Report
  • [Publications] S.Oda: "Atomic layer-by-layer MOCVD of thinfilms of Oxide superconductors" Int.workshop on Chemical Designing and Processing of High-Tc Superconductors II. (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] S.Oda,M.Kimura and M.Otobe: "Coulomb staircase characteristics in silicon quantum dots fabricated by plasma processing" Silicon Nanoelectronics Workshop. (1996)

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      1996 Annual Research Report
  • [Publications] S.Sugahara,T.Kitamura,S.Imai,and M.Matsumura: "Ideal monolayer adsorption of germanium on Si(100)surface" Appl.Surf.Sci. 107. 137-144 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] S.Sugahara,E.Hasunuma,S.Imai,and M.Matsumura: "Modeling of Si atomic-layer-epitaxy" Appl.Surf.Sci.107. 161-171 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] S.Sugahara,Y.Uchida,T.Kitamura,T.Nagai,M.Matsuyama,T.Hattori and M.Matsumura: "A proposed atomic-layer-deposition of germanium on Si surface" Jpn J.Appl.Phys.in press.

    • Related Report
      1996 Annual Research Report
  • [Publications] S.Sugahara and M.Matsumura: "Modeling of germanium atomic-layer-epitaxy" Appl.Surf.Sci. in press.

    • Related Report
      1996 Annual Research Report
  • [Publications] S.Morishita,S.Sugahara and M.Matsumura: "Atomic-layer chemical-vapor-deposition of silicon nitride" Appl.Surf.Sci.in press.

    • Related Report
      1996 Annual Research Report
  • [Publications] T.Haraguchi and O.Sugiura: "Low Temperature Flow of High-Water Containing Glasses Prepared by Chemical Vapor Deposition" Jpn.J.Appl.Phys. 35,10A. L1290-L1292 (1996)

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      1996 Annual Research Report
  • [Publications] 藤本明,杉浦修: "TICS/H2O系SiO2CVDの堆積モデル" 第50回半導体・集積回路シポジウム講演論文集. 124-129 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] A.Fujimoto and O.Sugiura: "A Deposition mechanism of SiO2 CVD using Tetraisocyanate-silane and Water" 1997 MRS Spring Meeting. (1997)

    • Related Report
      1996 Annual Research Report
  • [Publications] D.F.Moore: "Recent trends in the fabrication of High-Tc films and devices" FED Journal 6. 47-56 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] D.F.Moore,J.F.Walker and J.T.Whitney: "Focusedion beam processing for microscale fabrication" Microelectronic Engineering. 30. 517-522 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] A.J.Pauza,W.E.Booij,D.F.Moore and Y.Yuan: "Electron beam damage Josephson junctions:the relation between beam damageprofile and electrical properties" Czechoslovak Journal of Physics. 46. 1325-6 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] T.Kiriyama,N.Nakajima,S.Yoshimura,D.F.Moore,S.C.Burgess, and N.Shibaike: "A conceptual design environment for micromechanisms page" Proceedings of the European Design and Test Conference,IEEE. 1066-1409/96. 448-453 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] A.J.Pauza,D.F.Moore: "Focusede Electron Beam Irradiation(FEBI)Josephson junctions" Proceedings.HTS-WORKSHOP on Digital Applications,Josephson Junctions and 3-Terminal Devices. (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] D.F.Moore,J.H.Daniel,S.C.Burgess,A.Nakayama,N.Shibaike and T.Kiriyama: "Silicon-on-insulator material for sensors and accelerometers" IEE Colloqium on Silicon Fabricated Intertial Instruments,London IEE 1996. 2279. 1-5 (1996)

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      1996 Annual Research Report
  • [Publications] M.Froggatt,W.I.Milne,J.Robertson and M.J.Powell: "Microcrystalline TFTs" Symposium A,MRS Spring Meeting. (1997)

    • Related Report
      1996 Annual Research Report
  • [Publications] M.M.M.Bilek and W.I.Milne: "FCVA produceds-SiH" Electronics Letters. 32,21. 2016 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] M.M.M.Bilek and W.I.Milne: "Filtered cathodic vacuum arc deposition of thin film Si" Thin Solid Films. Dec. (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] M.M.M.Bilek and W.I.Milne: "Filtered cathodic vacuum arc deposition of amorphous silicon" MRS Spring Meeting. (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] M.M.M.Bilek,M.Chhowalla,M.Weiler and W.I.Milne: "Ion energy and plasma characterisation in a silicon filtered cathodic vacuum arc" Journal of Applied Physics. 79(3). (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] Y.Chen,F.J.Clough,S.Ekkanath Madathil and W.I.Milne: "High voltage polysilicon TFTS" MRS Spring Meeting. (1997)

    • Related Report
      1996 Annual Research Report
  • [Publications] Y.Chen,F.J.Clough,S.Ekkanath Madathil,W.I.Milne and W.Eccleston: "Novel polysilicon high voltage transistor" J.Electrochem Soc. in press. (1997)

    • Related Report
      1996 Annual Research Report
  • [Publications] W.I.Milne and J.Robertson: "Field emission from ta-C" MRS Spring Meeting. (1997)

    • Related Report
      1996 Annual Research Report
  • [Publications] J.Robertson and W.I.Milne: "Band model for emission from diamond and diamondlike carbon" MRS Spring Meeting. (1997)

    • Related Report
      1996 Annual Research Report
  • [Publications] Y.J.Lui,S.F.Yoon,J.Ahn and W.I.Milne: "Effect of H dilution on the deposition of carbon rich a-SiC:H produced from ECR" Mats Science and Engineering B-Solid State Matertials. 3. 188 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] S.F.Yoon,A.Ji,J.Ahn and W.I.Milne: "The effect of microwave power on the deposition of boron depedSi-C:H using ECR" Thin Solid Films. 288,1-2. 155-159 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] K.C.Park,J.H.Moon,S.J.Chung,M.H.Oh,W.I.Milne and J.Jang: "Electron emission from DLC deposited by using a layer by layer technique" Applied Physics Letters. in press. (1997)

    • Related Report
      1996 Annual Research Report
  • [Publications] K.Gilkes,H.S.Sands,D.N.Batchelder,J.Robertson and W.I.Milne: "Direct observation of sp3 bonding in ta-C using UV raman spectroscopy" Applied Physics Letters. in press. (1997)

    • Related Report
      1996 Annual Research Report
  • [Publications] S.Xu,D.Flynn,B.K.Tay,S.Prawer,K.W.Nugent,S.R.P.Silva,Y.Lifshitz and W.I.Milne: "The mechanical and raman properties of FCVA prepared ta-C Films with a high sp3 fraction" Phil Mag B. in press. (1997)

    • Related Report
      1996 Annual Research Report
  • [Publications] M.Chhowalla,J.Robertson,C.W.Chen,C.Davis,G.A.J.Amaratunga and W.I.Milne: "Properties of ta-C as a function of ion energy,growth rate and deposition temperature" Journal of Applied Physics. (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] M.M.M.Bilek,D.McKenzie,Y.Yin,M.Chhowalla and W.I.Milne: "Interactions of the directed plasma from a cathodic arc with electrodes and magnetic dusts" IEEE Trans on Plasma Sci.24,5. 1291 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] J.S.Park and W.I.Milne: "Etching of ta-C films in an O2 plasma" Jap.Journal of Applied Physics,Part 2. 25,12A. L1550 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] S.Xu,T.Y.Qiang,T.H.Siang,B.K.Tay and W.I.Milne: "Simulation of plasma flow in toroidal solenoid filters" IEEE Trans on Plasma Sci.24,6. 1309 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] S.F.Yoon.R.Ji,J.Ahn and W.I.Milne: "The effect of process pressure and microwave power on the properties of boron dopeda-SiC:H films prepared using an ECR technique" Diamond and Related Materials. 5,11,. 1371-7 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] S.R.P.Silva,S.Xu,B.K.Tay,H.S.Tan and W.I.Milne: "Nanocrystallites in ta-C films" Applied Physics Letters. 69(4). (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] K.C.Park,J.H.Moon,S.J.Chung,J.H.Jung,B.K.Ju,M.H.Oh,W.I.Milne,M.K.Han and J.Jang: "Field emission properties of N dopedta-C films" Journal of Vacuum Science and Technology. in press. (1997)

    • Related Report
      1996 Annual Research Report
  • [Publications] K.C.Park,J.H.Moon,S.K.Chung,M.H.Oh,W.I.Milne and J.Jang: "Relationship between field emission characteristics and hydrogen content in DLC deposited using a layer-by-layer technique" Journal of Vacuum Science and Technology. in press. (1997)

    • Related Report
      1996 Annual Research Report
  • [Publications] F.J.Clough,W.I.Milne,B.Kleinsorge,J,Robertson,G.A.J.Amaratunga and B.N.Roy: "Tetrahedrally bondedamorphous carbon(ta-C)thin film transistors" Electronics Letters. 498 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] S.Xu,B.K.Tay,H.S.Tan,L.Zhong,Y.Tu,S.R.P.Silva and W.I.Milne: "Properties of carbon ion depositedtetrahedral amorphous carbon films as a function of ion energy" Journal of Applied Physics. 79,9. 7234 (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] S.R.P.Silva,S.Xu,B.K.Tay,H.S.Tan,H-J.Scheibe,M.Chhowalla and W.I.Milne: "The structure of ta-C" Thin Solid Films. Dec. (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] Y.J.Lui,S.F.Yoon,J.Ahn and W.I.Milne: "Effect of H dilution on deposition of C rich a-SiC:H films by ECR" Journal of Mat Sci,Part B,Solid State Mats for Adv.Tech.(1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] S.F.Yoon,J.Rong,J.Ahn and W.I.Milne: "The effect of microwave power on the deposition of boron dopeda-SiC:H films" Thin Solid Films. in press. (1996)

    • Related Report
      1996 Annual Research Report
  • [Publications] S.F.Yoon,S.Miyajima and W.I.Milne: "Photo-CVD produced amorphous silicon carbide" Materials Science and Engineering B. in press. (1996)

    • Related Report
      1996 Annual Research Report

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Published: 1996-04-01   Modified: 2016-04-21  

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