Vapor Deposition of Diamond Films by Using Pulsed Discharge Plasma
Project/Area Number |
10650008
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Research Category |
Grant-in-Aid for Scientific Research (C)
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Allocation Type | Single-year Grants |
Section | 一般 |
Research Field |
Applied materials science/Crystal engineering
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Research Institution | Aichi University of Education |
Principal Investigator |
NODA Mikio Aichi University of Education, Integrated Natural Sciences, Professor, 教授 (10024324)
|
Project Period (FY) |
1998 – 1999
|
Project Status |
Completed (Fiscal Year 1999)
|
Budget Amount *help |
¥3,500,000 (Direct Cost: ¥3,500,000)
Fiscal Year 1999: ¥700,000 (Direct Cost: ¥700,000)
Fiscal Year 1998: ¥2,800,000 (Direct Cost: ¥2,800,000)
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Keywords | diamond film / plasma CVD / pulsed discharge / intermittent discharge / sub-electrode / structural change / emission from plasma / 電極間距離 / アルミニュウム基板 / 膜質の制御 |
Research Abstract |
1. Diamond films were formed by both the intermittent and the pulsed DC plasma chemical vapor deposition (CVD) methods. The intermittent discharge time (TィイD2dィエD2) and non-discharge time (TィイD2nィエD2) in each period could be changed independently. A sub-electrode located closely to the cathode was introduced as a new method in the present experiments, where the substrate current was also controlled with another DC power supply connected to the substrate. By these improved methods, the discharge became more stable and the deposition conditions could be changed more widely. 2. When the discharge was intermittent using half-wave-rectified waveform, the crystalline quality of the films deposited on silicon substrate became superior when the electrode distance was about 20 to 25 mm, in comparison with those when the electrode distance was 10 and 30 mm. (Ref. 4) 3. The crystalline quality of the film becomes superior when TィイD2dィエD2 decreases TィイD2nィエD2 increases. The deposition rate decreases when TィイD2dィエD2 decreases less than 0.5 ms and TィイD2nィエD2 increases more than 2 ms. The optimum value of TィイD2dィエD2 and TィイD2nィエD2 to deposit high quality film without decreasing the deposition rate are 0.5 and 2 ms, respectively. The emission intensities of HィイD2αィエD2 and HィイD2βィエD2 from the plasma decrease when the deposition rate decreased, and excitation temperature calculated from the intensities of the emission increases when the crystalline quality becomes superior. (Ref. 3) 4. When gas pressure (Pg) during the deposition increased, the crystalline quality of the films became superior, and deposition rate increased, especially Pg became larger than 150 Torr. Corresponding these changes, emission intensity of CィイD22ィエD2 from the plasma increased remarkably. (to be reported)
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Report
(3 results)
Research Products
(15 results)