| Project/Area Number |
11450004
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied materials science/Crystal engineering
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| Research Institution | Tokyo University of Agriculture and Technology |
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Principal Investigator |
MORISHITA Yoshitaka Tokyo University of Agriculture and Technology, Faculty of Technology, Associate Professor, 工学部, 助教授 (00272633)
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| Co-Investigator(Kenkyū-buntansha) |
ISHIBASHI Takayuki Tokyo University of Agriculture and Technology, Faculty of Technology, Assistant Professor, 工学部, 助手 (20272635)
LANG Hiroyoshi Tokyo University of Agriculture and Technology, Faculty of Technology, Professor, 工学部, 教授 (50302914)
SATO Katsuaki Tokyo University of Agriculture and Technology, Faculty of Technology, Professor, 工学部, 教授 (50170733)
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| Project Period (FY) |
1999 – 2001
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| Project Status |
Completed (Fiscal Year 2001)
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| Budget Amount *help |
¥14,900,000 (Direct Cost: ¥14,900,000)
Fiscal Year 2001: ¥1,800,000 (Direct Cost: ¥1,800,000)
Fiscal Year 2000: ¥4,100,000 (Direct Cost: ¥4,100,000)
Fiscal Year 1999: ¥9,000,000 (Direct Cost: ¥9,000,000)
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| Keywords | Photonic crystals / Nano-spinics / Semiconductor quantum dots / Photonics / Anodization / Photonic bandgap / Quantum dots / Ferromagnet / semiconductor heterostructures / 幅射場 / 磁性体量子ドット / 陽極化成 |
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| Research Abstract |
In order to fabricate and investigate spin-controlled photonic crystals, the pillar structures of triangular arrays with high aspect ratio were fabricated. The dot mask of triangular array was patterned on GaAs surfaces by electron beam lithograph. The patterned substrate was next etched with BCl_3 flow. SEM images of the samples showed pillar structures with the aspect ratio of 6.6〜10. In orde to form 3D photonic crystals, these structures were buried by SiO_2 using TEOS-PECVD.
As another fabrication technique of photonic crystals, GaAs wafers were anodized with NH_4OH electrolyte under the following conditons ; the external magnetic field was applied in perpendicular or parallel to the GaAs (001) surface. As a resit, we succeeded in forming high-odered honeycomb hollow arrays. Moreover, MBE growth of InAs on there honeycomb hollows led to controling the site of InAs dots
Concerning spin-related phenomena, MnAs/GaAs heterostructures were grown on GaAs substrates with V-grooves by MBE. VSM measurements of these samples showed that double-step magnetic hysteresis features were observed.
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