| Budget Amount *help |
¥43,810,000 (Direct Cost: ¥33,700,000、Indirect Cost: ¥10,110,000)
Fiscal Year 2018: ¥9,360,000 (Direct Cost: ¥7,200,000、Indirect Cost: ¥2,160,000)
Fiscal Year 2017: ¥9,360,000 (Direct Cost: ¥7,200,000、Indirect Cost: ¥2,160,000)
Fiscal Year 2016: ¥11,700,000 (Direct Cost: ¥9,000,000、Indirect Cost: ¥2,700,000)
Fiscal Year 2015: ¥13,390,000 (Direct Cost: ¥10,300,000、Indirect Cost: ¥3,090,000)
|
|---|
| Outline of Final Research Achievements |
This research aims at the low voltage operation of integrated circuits by beyond CMOS and conventional CMOS circuits. The low voltage circuits consist of silicon nanowire transistors, and a room temperature operating single electron transistor is adopted as beyond CMOS. The gate voltage of the Coulomb oscillation peak is as low as 0.45V and the supply voltage of nanowire transistor circuits is 2V. The tiny current of the Coulomb oscillations was amplified and converted to the amplitude of 0.8V by the current-voltage conversion circuits. From the results, the low voltage operation of integrated circuits by room temperature operating single electron transistor and conventional MOS transistors has been demonstrated.
|
