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An IoT that can keep on running over years efficiently and reliably

Research Project

Project/Area Number 15H02677
Research Category

Grant-in-Aid for Scientific Research (B)

Allocation TypeSingle-year Grants
Section一般
Research Field Computer system
Research InstitutionKyoto Institute of Technology

Principal Investigator

Kobayashi Kazutoshi  京都工芸繊維大学, 電気電子工学系, 教授 (70252476)

Co-Investigator(Kenkyū-buntansha) 古田 潤  京都工芸繊維大学, 電気電子工学系, 助教 (30735767)
西澤 真一  埼玉大学, 理工学研究科, 助教 (40757522)
吉河 武文  富山県立大学, 工学部, 教授 (60636702)
松本 高士  東京大学, 大規模集積システム設計教育研究センター, 助教 (70417369)
Research Collaborator Stoffels Steve  Interuniversity Microelectronics Centre
Posthuma Niels  Interuniversity Microelectronics Centre
Li Xiangdong  Interuniversity Microelectronics Centre
Decoutere Stefaan  Interuniversity Microelectronics Centre
Project Period (FY) 2015-04-01 – 2019-03-31
Project Status Completed (Fiscal Year 2018)
Budget Amount *help
¥15,990,000 (Direct Cost: ¥12,300,000、Indirect Cost: ¥3,690,000)
Fiscal Year 2018: ¥3,380,000 (Direct Cost: ¥2,600,000、Indirect Cost: ¥780,000)
Fiscal Year 2017: ¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000)
Fiscal Year 2016: ¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000)
Fiscal Year 2015: ¥3,640,000 (Direct Cost: ¥2,800,000、Indirect Cost: ¥840,000)
KeywordsIoT / ソフトエラー / 経年劣化 / パワーエレクトロニクス / 一時故障 / 永久故障 / NBTI / RTN / 信頼性 / ランダムテレグラフノイズ / BTI / パワエレ / FDSOI / バルク / スタックトランジスタ
Outline of Final Research Achievements

In order to realize an IoT that can keep on running over years efficiently and reliably, those three topics were investigate 1. Circuit strong against temporal error, 2. Circuit strong against aging degradation, 3. Compact power converter
In the topic 1, fabricated chips were exposed to alpha, neutron and heavy ions. They have 100x radiation hardness than conventional chips without radiation hardness. In the topic 2, a fabricated chip was put in a chamber with high temperature and high voltage. We measured tendency of aging degradation. In the topic 3, we fabricated an integrated circuit by using planer GaN HEMTs.

Academic Significance and Societal Importance of the Research Achievements

インターネットの普及によりそれに接続される電子機器の数は急速に増加している.一旦接続されたIoT機器は,放置され続ける場合がほとんどであり,長時間にわたってエラーなく動作することが要求される.またその小型化も重要な課題である.本研究成果により,そのようなIoTの実現の可能性が大きく高まった.本成果は民間企業などへの移転を計画中であり,社会に成果を還元する予定である.

Report

(5 results)
  • 2018 Annual Research Report   Final Research Report ( PDF )
  • 2017 Annual Research Report
  • 2016 Annual Research Report
  • 2015 Annual Research Report
  • Research Products

    (32 results)

All 2019 2018 2017 2016 2015 Other

All Int'l Joint Research (2 results) Journal Article (7 results) (of which Peer Reviewed: 6 results,  Open Access: 1 results,  Acknowledgement Compliant: 1 results) Presentation (20 results) (of which Int'l Joint Research: 20 results,  Invited: 2 results) Book (1 results) Remarks (1 results) Patent(Industrial Property Rights) (1 results)

  • [Int'l Joint Research] Interuniversity Microelectronics Centre(ベルギー)

    • Related Report
      2018 Annual Research Report
  • [Int'l Joint Research] imec(ベルギー)

    • Related Report
      2016 Annual Research Report
  • [Journal Article] A Low-Power Radiation-Hardened Flip-Flop with Stacked Transistors in a 65 nm FDSOI Process2018

    • Author(s)
      MARUOKA Haruki、HIFUMI Masashi、FURUTA Jun、KOBAYASHI Kazutoshi
    • Journal Title

      IEICE Transactions on Electronics

      Volume: E101.C Issue: 4 Pages: 273-280

    • DOI

      10.1587/transele.E101.C.273

    • NAID

      130006602277

    • ISSN
      0916-8524, 1745-1353
    • Related Report
      2018 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Evaluation of plasma-induced damage and bias temperature instability depending on type of antenna layer using current-starved ring oscillators2018

    • Author(s)
      Kishida Ryo、Furuta Jun、Kobayashi Kazutoshi
    • Journal Title

      Japanese Journal of Applied Physics

      Volume: 57 Issue: 4S Pages: 04FD12-04FD12

    • DOI

      10.7567/jjap.57.04fd12

    • NAID

      210000148889

    • Related Report
      2017 Annual Research Report
  • [Journal Article] Replication of Random Telegraph Noise by Using a Physical-Based Verilog-AMS Model2017

    • Author(s)
      T. Komawaki, M. Yabuuchi, R. Kishida, J. Furuta, T. Matsumoto, and K. Kobayashi
    • Journal Title

      IEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences

      Volume: E100.A Issue: 12 Pages: 2758-2763

    • DOI

      10.1587/transfun.E100.A.2758

    • NAID

      130006236533

    • ISSN
      0916-8508, 1745-1337
    • Related Report
      2017 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Size Optimization Technique for Logic Circuits that Considers BTI and Process Variations2016

    • Author(s)
      M. Yabuuchi, and K. Kobayashi
    • Journal Title

      IPSJ Transactions on System LSI Design Methodology

      Volume: 9 Issue: 0 Pages: 72-78

    • DOI

      10.2197/ipsjtsldm.9.72

    • NAID

      130005255788

    • ISSN
      1882-6687
    • Related Report
      2016 Annual Research Report
    • Peer Reviewed / Open Access / Acknowledgement Compliant
  • [Journal Article] A Radiation-Hardened Non-Redundant Flip-Flop, Stacked Leveling Critical Charge Flip-Flop in a 65 nm Thin BOX FD-SOI Process2016

    • Author(s)
      J. Furuta, J. Yamaguchi, and K. Kobayashi
    • Journal Title

      IEEE Trans. on Nuclear Science

      Volume: 63 Issue: 4 Pages: 2080-2086

    • DOI

      10.1109/tns.2016.2543745

    • Related Report
      2016 Annual Research Report
    • Peer Reviewed
  • [Journal Article] A Perpetuum Mobile 32bit CPU on 65nm SOTB CMOS Technology with Reverse-Body-Bias Assisted Sleep Mode2015

    • Author(s)
      石橋, 杉井, 蒲原, 宇佐美, 天野, 小林, Pham Cong-Kha
    • Journal Title

      IEICE Trans. on Electronics

      Volume: E98-C Pages: 536-543

    • NAID

      130005086141

    • Related Report
      2015 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Impact of Cell Distance and Well-contact Density on Neutron-induced Multiple Cell Upsets2015

    • Author(s)
      古田, 小林, 小野寺
    • Journal Title

      IEICE Transactions on Electronics

      Volume: E98.C Issue: 4 Pages: 298-303

    • DOI

      10.1587/transele.E98.C.298

    • NAID

      130005061834

    • ISSN
      0916-8524, 1745-1353
    • Related Report
      2015 Annual Research Report
    • Peer Reviewed
  • [Presentation] Extracting BTI-induced Degradation without Temporal Factors by Using BTI-Sensitive and BTI-Insensitive Ring Oscillators2019

    • Author(s)
      Ryo Kishida
    • Organizer
      International Conference on Microelectronic Test Structure
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Monolithically Integrated E-Mode GaN-on-SOI Gate Driver with Power GaN-HEMT for MHz-Switching2018

    • Author(s)
      Yuki Yamashita
    • Organizer
      Workshop on Wide Bandgap Power Devices and Applications
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Evaluation of Heavy-Ion-Induced SEU Cross Sections of a 65 nm Thin BOX FD-SOI Flip-Flops Based on Stacked Inverter2018

    • Author(s)
      Jun Furuta
    • Organizer
      The conference on Radiation and its Effects on Components and Systems
    • Related Report
      2018 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Sensitivity to Soft Errors of NMOS and PMOS Transistors Evaluated by Latches with Stacking Structures in a 65 nm FDSOI Proces2018

    • Author(s)
      K. Yamada, H. Maruoka, J. Furuta, and K. Kobayashi
    • Organizer
      IEEE International Reliability Physics Symposium
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Degradation Caused by Negative Bias Temperature Instability Depending on Body Bias on NMOS or PMOS in 65 nm Bulk and Thin-BOX FDSOI Processes2017

    • Author(s)
      R. Kishida, and K. Kobayashi
    • Organizer
      Electron Devices Technology and Manufacturing
    • Place of Presentation
      Toyama, Japan
    • Year and Date
      2017-03-01
    • Related Report
      2016 Annual Research Report
    • Int'l Joint Research
  • [Presentation] The Impact of RTN-Induced Temporal Performance Fluctuation Against Static Performance Variation2017

    • Author(s)
      T. Matsumoto, K. Kobayashi, and H. Onodera
    • Organizer
      Electron Devices Technology and Manufacturing
    • Place of Presentation
      Toyama, Japan
    • Year and Date
      2017-03-01
    • Related Report
      2016 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Influence of Layout Structures to Soft Errors Caused by Higher-energy Particles on 28/65 nm FDSOI Flip-Flops2017

    • Author(s)
      M. Hifumi, H. Maruoka, S. Umehara, K. Yamada, J. Furuta, and K. Kobayashi
    • Organizer
      IEEE International Reliability Physics Symposium
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research
  • [Presentation] A 16 nm FinFET Radiation-hardened Flip-Flop, Bistable Cross-coupled Dual-Modular-Redundancy FF for Terrestrial and Outer-Space Highly-reliable Systems2017

    • Author(s)
      K. Kobayashi, J. Furuta, H. Maruoka, M. Hifumi, S. Kumashiro, T. Kato, and S. Kohri
    • Organizer
      IEEE International Reliability Physics Symposium
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research
  • [Presentation] A Flip-Flop with High Soft-error Tolerance and Small Power and Delay Overheads2017

    • Author(s)
      K. Yamada, H. Maruoka, J. Furuta, and K. Kobayashi
    • Organizer
      Symposium on Low-Power and High-Speed Chips (COOL Chips)
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Circuit-level Simulation Methodology for Random Telegraph Noise by Using Verilog-AMS2017

    • Author(s)
      T. Komawaki, M. Yabuuchi, R. Kishida, J. Furuta, T. Matsumoto, and K. Kobayashi
    • Organizer
      Circuit-level Simulation Methodology for Random Telegraph Noise by Using Verilog-AMS
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Plasma Induced Damage Depending on Antenna Layers in Ring Oscillators2017

    • Author(s)
      R. Kishida, J. Furuta, and K. Kobayashi
    • Organizer
      International Conference on Solid State Devices and Materials
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Radiation-Hardened Flip-Flops with Low Delay Overheads Using PMOS Pass-Transistors to Suppress a SET Pulse in a 65 nm FDSOI Process2017

    • Author(s)
      K. Yamada, H. Maruoka, J. Furuta, and K. Kobayashi
    • Organizer
      The conference on Radiation and its Effects on Components and Systems
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Highly-reliable Integrated Circuits for Ground and Space Applications2017

    • Author(s)
      ,K. Kobayashi
    • Organizer
      International Conference on ASIC
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] A Radiation-hard Layout Structure to Control Back-Gate Biases in a 65 nm Thin-BOX FDSOI Process2016

    • Author(s)
      J. Yamaguchi, J. Furuta, and K. Kobayashi
    • Organizer
      SOI-3D-Subthreshold Microelectronics Technology Unified Conference
    • Place of Presentation
      Burlingame, CA, USA
    • Year and Date
      2016-10-10
    • Related Report
      2016 Annual Research Report
    • Int'l Joint Research
  • [Presentation] A Non-Redundant Low-Power Flip Flop with Stacked Transistors in a 65 nm Thin BOX FDSOI Process2016

    • Author(s)
      H. Maruoka, M. Hifumi, J. Furuta, and K. Kobayashi
    • Organizer
      The conference on Radiation and its Effects on Components and Systems
    • Place of Presentation
      Bremen, Germany
    • Year and Date
      2016-09-19
    • Related Report
      2016 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Defect-Oriented Degradations in Recent VLSIs: Random Telegraph Noise, Bias Temperature Instability and Total Ionizing Dose2015

    • Author(s)
      小林
    • Organizer
      International Workshop on Radiation Effects on Semiconductor Devices for Space Applications, pp. 110-113
    • Place of Presentation
      Kiryu, Gunma, Japan
    • Year and Date
      2015-11-12
    • Related Report
      2015 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Anasysis of BOX Layer Thickness on SERs of 65 and 28nm FD-SOI Processes by a Monte-Carlo Based Simulation Tool2015

    • Author(s)
      張, 神田, 山口, 古田
    • Organizer
      International Conference on Solid State Devices and Materials
    • Place of Presentation
      Moscow, Russia
    • Year and Date
      2015-09-30
    • Related Report
      2015 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Analysis of the Soft Error Rates on 65-nm SOTB and 28-nm UTBB FD-SOI Structures by a PHITS- TCAD Based Simulation Tool2015

    • Author(s)
      張, 神田, 山口, 古田, 小林
    • Organizer
      International Conference on Simulation of Semiconductor Processes and Devices
    • Place of Presentation
      Washington DC, USA
    • Year and Date
      2015-09-10
    • Related Report
      2015 Annual Research Report
    • Int'l Joint Research
  • [Presentation] A Radiation-Hardened Non-redundant Flip-Flop, Stacked Leveling Critical Charge Flip-Flop in a 65 nm Thin BOX FD-SOI Process2015

    • Author(s)
      山口, 古田, 小林
    • Organizer
      The conference on Radiation and its Effects on Components and Systems
    • Place of Presentation
      Moscow, Russia
    • Year and Date
      2015-09-10
    • Related Report
      2015 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Impact of Random Telegraph Noise on Ring Oscillators Evaluated by Circuit-level Simulations2015

    • Author(s)
      大島, Pieter Weckx, Ben Kaczer, 小林, 松本
    • Organizer
      International Conference on IC Design and Technology
    • Place of Presentation
      Leuven, Belgium
    • Year and Date
      2015-06-02
    • Related Report
      2015 Annual Research Report
    • Int'l Joint Research
  • [Book] VLSI Design and Test for Systems Dependability2018

    • Author(s)
      Shojiro Asai
    • Total Pages
      800
    • Publisher
      Springer
    • Related Report
      2018 Annual Research Report
  • [Remarks] ソフトエラー関連情報

    • URL

      http://www-vlsi.es.kit.ac.jp/SERconf/

    • Related Report
      2017 Annual Research Report
  • [Patent(Industrial Property Rights)] 入出力回路、及びフリップフロップ回路2015

    • Inventor(s)
      小林,古田,山口
    • Industrial Property Rights Holder
      国立大学法人京都工芸繊維大学
    • Industrial Property Rights Type
      特許
    • Industrial Property Number
      2015-160642
    • Filing Date
      2015-08-17
    • Related Report
      2015 Annual Research Report

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Published: 2015-04-16   Modified: 2020-03-30  

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