Glide motion and electronic structure of partial dislocations in 4H-SiC under electronic excitation conditions

• Project/Area Number: 15H03535
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Nanomaterials engineering
• Research Institution: Tohoku University
• Principal Investigator: Ohno Yutaka 東北大学, 金属材料研究所, 准教授 (80243129)
• Research Collaborator: MAEDA Koji 東京大学, 名誉教授 (10107443)
• Project Period (FY): 2015-04-01 – 2018-03-31
• Project Status: Completed (Fiscal Year 2017)
• Budget Amount: ¥17,810,000 (Direct Cost: ¥13,700,000、Indirect Cost: ¥4,110,000); Fiscal Year 2017: ¥2,860,000 (Direct Cost: ¥2,200,000、Indirect Cost: ¥660,000); Fiscal Year 2016: ¥2,860,000 (Direct Cost: ¥2,200,000、Indirect Cost: ¥660,000); Fiscal Year 2015: ¥12,090,000 (Direct Cost: ¥9,300,000、Indirect Cost: ¥2,790,000)
• Keywords: 炭化シリコン / 電子励起 / 転位すべり / 格子欠陥 / ナノ欠陥制御

Outline of Final Research Achievements

Photo-induced glide of 30degrees-Si partial dislocations in 4H-SiC was induced by the illumination of laser light with a sub-gap energy (2.71 eV and 3.06 eV) in a transmission electron microscope (TEM), and the glide was observed in-situ by TEM under photo-illumination. It was concluded that the glide was enhanced by the photo-ionization of the dislocations with a localized energy level below 0.55 eV in depth. Under the hypothesis that 1) the glide velocity was determined by the drift motion of kinks on the dislocations and 2) the driving force of the glide was related to the energy of the stacking faults bound by the dislocations as well as to the line tension of the dislocations, the activation energy for the kink motion was estimated to be below 0.6 eV.

Research Products

• [Journal Article] Intrinsic microstructure of Si/GaAs heterointerfaces fabricated by surface-activated bonding at room temperature (2018)
  • Author(s): Y. Ohno, H. Yoshida, S. Takeda, J. Liang, N. Shigekawa
  • Journal Title: Japanese Journal of Applied Physics Volume: 57 Issue: 2S1 Pages: 02BA01-02BA01
  • DOI: 10.7567/jjap.57.02ba01
  • NAID: 210000148616
  • Peer Reviewed
• [Journal Article] Characterization of femtosecond-laser-induced periodic structures on SiC substrates (2018)
  • Author(s): R. Miyagawa, Y. Ohno, M. Deura, I. Yonenaga, O. Eryu
  • Journal Title: Japanese Journal of Applied Physics Volume: 57 Issue: 2 Pages: 025602-025602
  • DOI: 10.7567/jjap.57.025602
  • Peer Reviewed
• [Journal Article] Nanoscopic analysis of oxygen segregation at tilt boundaries in silicon ingots using atom probe tomography combined with TEM and ab initio calculations (2017)
  • Author(s): OHNO Y.、INOUE K.、FUJIWARA K.、KUTSUKAKE K.、DEURA M.、YONENAGA I.、EBISAWA N.、SHIMIZU Y.、INOUE K.、NAGAI Y.、YOSHIDA H.、TAKEDA S.、TANAKA S.、KOHYAMA M.
  • Journal Title: Microscopy Volume: 268 Issue: 3 Pages: 230-238
  • DOI: 10.1111/jmi.12602
  • Peer Reviewed
• [Journal Article] Impact of local atomic stress on oxygen segregation at tilt boundaries silicon (2017)
  • Author(s): Y. Ohno, K. Inoue, K. Fujiwara, K. Kutsukake, M. Deura, I. Yonenaga, N. Ebisawa, Y. Shimizu, K. Inoue, Y. Nagai, H. Yoshida, S. Takeda, S. Tanaka, M. Kohyama
  • Journal Title: Applied Physics Letters Volume: 110 Issue: 6
  • DOI: 10.1063/1.4975814
  • Peer Reviewed
• [Journal Article] Recombination activity of nickel, copper, and oxygen atoms segregating at grain boundaries in mono-like silicon crystals (2016)
  • Author(s): Y. Ohno, K. Kutsukake, M. Deura, I. Yonenaga, Y. Shimizu, N. Ebisawa, K. Inoue, Y. Nagai, H. Yoshida, S. Takeda
  • Journal Title: Applied Physics Letters Volume: 109 Issue: 14
  • DOI: 10.1063/1.4964440
  • Peer Reviewed
• [Presentation] Structural properties of low-resistance Si/GaAs heterointerfaces fabricated by surface-activated bonding at room temperature (2018)
  • Author(s): Y. Ohno
  • Organizer: Energy, Materials, and Nanotechnology (EMN) Photovoltaics Meeting 2018
  • Int'l Joint Research / Invited
• [Presentation] 半導体の粒界・転位機能－Si粒界とワイドギャップ半導体転位を中心に－ (2017)
  • Author(s): 大野裕
  • Organizer: 日本金属学会・日本鉄鋼協会東海支部 第７１回若手材料研究会「格子欠陥研究の最前線」
  • Place of Presentation: 安保ホール, 名古屋
  • Year and Date: 2017-03-24
  • Invited
• [Presentation] Grain boundary segregation in Si studied by atom probe tomography combined with TEM and ab-initio calculations (2017)
  • Author(s): Y. Ohno
  • Organizer: 20th International Conference on Microscopy of Semiconducting Materials
  • Int'l Joint Research / Invited
• [Presentation] シリコン結晶における不純物の粒界偏析 －微視的描像と機能－ (2017)
  • Author(s): 大野裕
  • Organizer: 第78回応用物理学会秋季学術講演会
  • Invited
• [Presentation] Chemical nanoanalyses at grain boundaries by joint use of atom probe tomography and TEM combined with ab-initio calculations (2017)
  • Author(s): Y. Ohno, K. Inoue, K. Fujiwara, K. Kutsukake, M. Deura, I. Yonenaga, Y. Shimizu, K. Inoue, N. Ebisawa, Y. Nagai, H. Yoshida, S. Takeda, S. Tanaka, M. Kohyama
  • Organizer: Analytical techniques for precise characterization of nano materials (ALTECH 2017) in European Materials Research Society (EMRS) Spring Meeting
  • Int'l Joint Research
• [Presentation] Mechanism of oxygen segregation at tilt boundaries in Si (2017)
  • Author(s): Y. Ohno, K. Inoue, K. Fujiwara, K. Kutsukake, M. Deura, I. Yonenaga, N. Ebisawa, Y. Shimizu, K. Inoue, Y. Nagai, H. Yoshida, S. Takeda, S. Tanaka, M. Kohyama
  • Organizer: 29th International Conference on Defects in Semiconductors (ICDS2017)
  • Int'l Joint Research
• [Presentation] 表面活性化接合Si/GaAs界面の平面TEM観察 (2016)
  • Author(s): 大野裕
  • Organizer: 独立行政法人日本学術振興会接合界面創成技術第191委員会 第7回研究会
  • Place of Presentation: 東京大学, 東京
  • Year and Date: 2016-12-16
  • Invited
• [Presentation] Segregation ability of oxygen and carbon atoms at large-angle grain boundaries in Si (2016)
  • Author(s): Y. Ohno, K. Inoue, K. Fujiwara, K. Kutsukake, M. Deura, I. Yonenaga, Y. Shimizu, K. Inoue, N. Ebisawa, Y. Nagai, H. Yoshida, S. Takeda, S. Tanaka, M. Kohyama
  • Organizer: 9th International Workshop on Crystalline Silicon for Solar Cells (CSSC-9) & 3rd Silicon Materials Joint Workshop
  • Place of Presentation: Tempe, AZ, USA
  • Year and Date: 2016-10-10
  • Int'l Joint Research
• [Presentation] Nanoscopic segregation ability of large-angle tilt boundaries in Si (2016)
  • Author(s): Y. Ohno, K. Inoue, K. Kutsukake, M. Deura, I. Yonenaga, N. Ebisawa, Y. Shimizu, K. Inoue, Y. Nagai, H. Yoshida, S. Takeda, S. Tanaka, M. Kohyama
  • Organizer: Extended Defects in Semiconductors 2016
  • Place of Presentation: Les Issambres, France
  • Year and Date: 2016-09-25
  • Int'l Joint Research
• [Presentation] Three-dimensional evaluation of segregation ability at grain boundaries in Si by atom probe tomography combined with transmission electron microscopy (2016)
  • Author(s): Y. Ohno
  • Organizer: European Materials Research Society 2016 Spring Meeting
  • Place of Presentation: Lille, France
  • Year and Date: 2016-05-02
  • Int'l Joint Research / Invited
• [Presentation] Nanoscopic mechanism of impurity segregation at grain boundaries in silicon (2016)
  • Author(s): Y. Ohno, K. Inoue, S. Ninomiya, K. Kutsukake, K. Fujiwara, M. Deura, I. Yonenaga, N. Ebisawa, Y. Shimizu, K. Inoue, Y. Nagai, H. Yoshida, S. Takeda, S. Tanaka, M. Kohyama
  • Organizer: Materials Research Society 2016 Spring Meeting
  • Place of Presentation: Phoenix, USA
  • Year and Date: 2016-03-28
  • Int'l Joint Research
• [Presentation] Impurity segregation at small angle tilt boundaries in silicon: nanoscopic mechanisms and applications (2016)
  • Author(s): Y. Ohno
  • Organizer: Energy, Materials, and Nanotechnology (EMN) Photovoltaics Meeting 2016
  • Place of Presentation: Hong Kong, China
  • Year and Date: 2016-01-18
  • Int'l Joint Research / Invited
• [Presentation] Metal silicide epilayers self-organized at grain boundaries in silicon (2015)
  • Author(s): Y. Ohno, K. Inoue, K. Kutsukake, M. Deura, I. Yonenaga, H. Yoshida, S. Takeda, R. Taniguchi, H. Otubo, S. R. Nishitani, N. Ebisawa, Y. Shimizu, H. Takamizawa, K. Inoue, Y. Nagai
  • Organizer: 2nd East-Asia Microscopy Conference (EAMC2)
  • Place of Presentation: Himeji, Japan
  • Year and Date: 2015-11-24
  • Int'l Joint Research
• [Remarks] 大野裕HP
  • URL: http://lab-defects.imr.tohoku.ac.jp/ohno/ohno.html