Fabrication of tensile-strained single-crystalline GeSn wires on an insulator by lateral liquid-phase epitaxy towards electronic and opto-electronic device applications
| Project/Area Number |
15H03975
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Osaka University |
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Principal Investigator |
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| Co-Investigator(Renkei-kenkyūsha) |
WATABABE Heiji 大阪大学, 大学院工学研究科, 教授 (90379115)
HOSOI Takuji 大阪大学, 大学院工学研究科, 助教 (90452466)
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| Project Period (FY) |
2015-04-01 – 2018-03-31
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| Project Status |
Completed (Fiscal Year 2017)
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| Budget Amount *help |
¥16,640,000 (Direct Cost: ¥12,800,000、Indirect Cost: ¥3,840,000)
Fiscal Year 2017: ¥4,810,000 (Direct Cost: ¥3,700,000、Indirect Cost: ¥1,110,000)
Fiscal Year 2016: ¥5,590,000 (Direct Cost: ¥4,300,000、Indirect Cost: ¥1,290,000)
Fiscal Year 2015: ¥6,240,000 (Direct Cost: ¥4,800,000、Indirect Cost: ¥1,440,000)
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| Keywords | 電気・電子材料 / 作成・評価技術 / エピタキシャル成長 / 半導体 / ゲルマニウム / シリコンフォトニクス / 電子・電気材料 / 結晶工学 / 電子デバイス / 結晶成長 |
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| Outline of Final Research Achievements |
We have fabricated GeSn wires by liquid-phase epitaxy during rapid thermal annealing. The field effect transistor with the GeSn wires exhibited field effect hole mobility of 423 cm2/Vs. The GeSn pn-photodiode showed good optical response for 1.55 um wavelength.
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Report
(4 results)
Research Products
(18 results)
