| Budget Amount *help |
¥23,140,000 (Direct Cost: ¥17,800,000、Indirect Cost: ¥5,340,000)
Fiscal Year 2017: ¥6,760,000 (Direct Cost: ¥5,200,000、Indirect Cost: ¥1,560,000)
Fiscal Year 2016: ¥6,630,000 (Direct Cost: ¥5,100,000、Indirect Cost: ¥1,530,000)
Fiscal Year 2015: ¥9,750,000 (Direct Cost: ¥7,500,000、Indirect Cost: ¥2,250,000)
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| Outline of Final Research Achievements |
This research aimed to develop tunnel field-effect transistors (TFET) as a basic element of LSIs and to invent new functional devices with utilizing isoelectronic trap (IET). As for the basic element of LSIs, we realized the operation of both N- and P-type TFETs and succeeded in operating the complementary ring oscillator circuit at world’s first. This achievement was presented in the most prestigious international conference in the semiconductor device field and gained a great response. As for the invention of new functional devices, we succeeded in operating the IET-assisted TFET as a spin qubit and achieved an operating temperature up to 10K. This is the world's highest operating temperature of electronic-device-type spin qubits. This achievement was presented at conferences and submitted in a journal.
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