| Budget Amount *help |
¥5,070,000 (Direct Cost: ¥3,900,000、Indirect Cost: ¥1,170,000)
Fiscal Year 2017: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2016: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2015: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
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| Outline of Final Research Achievements |
For realization of low-power-consumption high-performance semiconductor integrated circuits, development of high mobility material is required. The (110)-oriented Si has gained interest because high hole mobility has been demonstrated while being a cost-effective material. In order to realize even higher mobility, introduction of lattice strain is effective. To change lattice constants, introduction of crystalline defects is necessary. In this study, evolution of crystalline morphology in strained Si/SiGe/Si(110) structure was investigated. In addition, room temperature effective hole mobility as high as 480 cm2/Vs was realized.
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