| Budget Amount *help |
¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000)
Fiscal Year 2017: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2016: ¥1,040,000 (Direct Cost: ¥800,000、Indirect Cost: ¥240,000)
Fiscal Year 2015: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
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| Outline of Final Research Achievements |
We fabricated new type of quantum well structures for ３～５μm mid-infrared devices by molecular beam epitaxy(MBE) and charactarized their optical properties. First, we studied annealing effects on the emission properties of InGaAsN/GaAsSb type II diodes and found that the emission wavelength of the diodes shifts from 2.6 μm to 3.4μm by 550℃ annealing and to 4.2μm by 600℃ annealing. In adittion, the effective mass of the InGaAsN layers decreases by the annealing. This is considered to be due to that Nitrogen atoms diffuse to cladding layers from InGaAsN active layers by the annealing.
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