Analysis of ferroelectric tunnel effect and realization of new memory device by atomically flat nano-multilayer structure fabrication
Project/Area Number |
15K05999
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Research Category |
Grant-in-Aid for Scientific Research (C)
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Allocation Type | Multi-year Fund |
Section | 一般 |
Research Field |
Electronic materials/Electric materials
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Research Institution | Fukuoka University |
Principal Investigator |
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Project Period (FY) |
2015-04-01 – 2019-03-31
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Project Status |
Completed (Fiscal Year 2018)
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Budget Amount *help |
¥4,810,000 (Direct Cost: ¥3,700,000、Indirect Cost: ¥1,110,000)
Fiscal Year 2017: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2016: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2015: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
|
Keywords | FeRAM / スパッタ法 / ナノ結晶 / 自己組織化 / スパッタ / Pt / 強誘電体 / 強誘電トンネル効果 / 次世代メモリ / 強誘電体メモリ |
Outline of Final Research Achievements |
Recently, realization of ferroelectric memory as universal memories and piezoelectric energy harvesting devices is expected. In particular, research of new memory device by ferroelectric tunnel effect in nanosized ferroelectric crystal has absorbed attention. Therefore, development of fabrication technology of high quality nanosized ferroelectric crystals and 3D structure is important. In this study, newly developed momentum controlled glancing angle incident sputtering methods was proposed, and fabrication and evaluation of various 3D nano-structures with ferroelectric and metal were investigated. From experimental results, high quality ferroelectric nano-crystals were obtained by the sputtering methods, and their structures such as nano-array, nano-sheet and nano-wire can be controlled by deposition condition. The metallic nano-sheet of Pt for electrode layer with wide area can also be obtained.
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Academic Significance and Societal Importance of the Research Achievements |
本研究では新しいナノ結晶育成手法が開発され、特にスパッタ法においても結晶成長を原子レベルで制御することが可能なことが示された。さらに様々なナノ構造体を作ることができることが示され、形状、形成位置を制御でき、ナノマテリアルの新しい育成技術を手に入れることができた。この研究成果を活用することで、次世代のメモリデバイスや発電デバイスの開発に役立ち、センサネットワークなど安全安心な社会の実現に寄与できると思える。
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Report
(5 results)
Research Products
(17 results)
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[Book] 熱刺激電流を用いた材料・デバイス開発の最前線2016
Author(s)
岩本光正, 工藤一浩, 中村雅一, 松島敏則, 秦川江, 安達千波矢, 大橋昇, 吉田郵司, 山田俊樹, 大友明, 田口大, 佐藤一石, 串田一雅, 栗山一男, 西田貴司, 田中優実, 佐々木匠, 平山泰生, 吉田福蔵, 与名本欣樹, 秋永広幸, 角谷透, 野田周一, 島久
Total Pages
246
Publisher
シーエムシー出版
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