| Project/Area Number |
15K06018
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | Hiroshima University |
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Principal Investigator |
Tetsuo Tabei 広島大学, ナノデバイス・バイオ融合科学研究所, 特任准教授 (40536124)
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| Co-Investigator(Kenkyū-buntansha) |
横山 新 広島大学, ナノデバイス・バイオ融合科学研究所, 教授 (80144880)
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| Project Period (FY) |
2015-04-01 – 2018-03-31
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| Project Status |
Completed (Fiscal Year 2017)
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| Budget Amount *help |
¥4,810,000 (Direct Cost: ¥3,700,000、Indirect Cost: ¥1,110,000)
Fiscal Year 2017: ¥910,000 (Direct Cost: ¥700,000、Indirect Cost: ¥210,000)
Fiscal Year 2016: ¥650,000 (Direct Cost: ¥500,000、Indirect Cost: ¥150,000)
Fiscal Year 2015: ¥3,250,000 (Direct Cost: ¥2,500,000、Indirect Cost: ¥750,000)
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| Keywords | シリコン光変調器 / トンネル電界効果トランジスタ / トンネルFET / フォトニック結晶 |
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| Outline of Final Research Achievements |
In order to reduce power consumption of a silicon optical modulator, a low voltage driven Mach-Zehnder type silicon optical modulator using a tunnel field-effect transistor as a phase shifter was studied. A tunnel field-effect transistor is a transistor operated by tunneling of electrons between source and channel. In this study, we proposed a structure for applying it to silicon optical modulator, and investigated a simplified CMOS compatible fabrication process. Although the optical modulation could not be confirmed with the prototype device, we could found out various problems and thier solutions in the process of fabricating silicon tunnel field-effect transistors on the SOI substrate.
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