| Project/Area Number |
15K06032
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| Research Category |
Grant-in-Aid for Scientific Research (C)
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| Allocation Type | Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | Tokai University |
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Principal Investigator |
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| Co-Investigator(Renkei-kenkyūsha) |
YAHARA Mitsutoshi 東海大学福岡短期大学, 情報処理学科, 教授 (30259692)
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| Project Period (FY) |
2015-04-01 – 2018-03-31
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| Project Status |
Completed (Fiscal Year 2017)
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| Budget Amount *help |
¥4,680,000 (Direct Cost: ¥3,600,000、Indirect Cost: ¥1,080,000)
Fiscal Year 2017: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2016: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2015: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
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| Keywords | 連想メモリ / ニューロンCMOS / ハミング距離 / マンハッタン距離 / 集積回路 / ニューロンＣＭＯＳ / クロックドＣＭＯＳ / ＣＡＭ / 一致検索 / 類似検索 |
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| Outline of Final Research Achievements |
An associative memory system finds the reference data that is the most similar to the input data, and outputs the reference data quickly. The fast search capability of the associative memory, which can find similar data from mass data in database is extremely useful for many fields including character recognition, fingerprint recognition, data compression, color image recognition, and so on. In this study, we aim to improve the performance of associative memory LSI by using a neuron CMOS inverter, which behaves similarly to a nerve cell, or neuron. In this project period, we design, fabricate and verify the associative memory LSI chips using neuron CMOS inverters which search similar data based on the Hamming distance and the Manhattan distance at high speed.
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