| Budget Amount *help |
¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Fiscal Year 2017: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2016: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
Fiscal Year 2015: ¥1,300,000 (Direct Cost: ¥1,000,000、Indirect Cost: ¥300,000)
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| Outline of Final Research Achievements |
Our objective is enhancing electrical conductivity while reducing thermal conductivity by controlling SiGe/Si interfaces for the wavenumber conservation. First, we proposed the stacking structures of SiGe epitaxial nanodots/Si as an ideal nanostructure based on this concept. We succeeded in developing the formation method of epitaxial stacking structure of ultrasmall SiGe nanodots/Si layers using ultrathin SiO2 film technique. Next, to demonstrate the above concept, we investigated the electrical properties of SiGe/Si supperlattice. As a result, we succeeded in the electric mobility of supperlattice as high as that of epitaxial Si films. The mechanism of electric transport that causes the high electric mobility is needed to be investigated more, but we successfully obtained the results we expected.
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